ROHM RR264M

Rectifier Diode
RR264M-400
Applications
Gneral rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.1±0.1
0.05
1.2
0.85
1.6±0.1
2.6±0.1
①
3.5±0.2
3.05
Features
1)Small power mold type（PMDU）
2)High Reliability
PMDU
Construction
Silicon diffused junction
0.9±0.1
0.8±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
Structure
Taping specifications（Unit : mm）
4.0±0.1
1.81±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VR
Reverse voltage(DC)
IF
Forward current(DC)
Average rectified forward current(*1)
Io
IFSM
Forward current surge peak （60Hz/1cyc）
Junction temperature
Tj
Storage temperature
Tstg
8.0±0.2
φ1.0±0.1
Limits
Unit
400
1
0.7
25
150
-55 to +150
V
A
A
A
C
C
3.71±0.1
0.25±0.05
1.75±0.1
φ1.55±0.05
2.0±0.05
3.5±0.05
4.0±0.1
1.5MAX
(*1)Mounting on epoxy board. 180°Half sine wave
Electrical characteristics（Ta=25C）
Parameter
Min.
Typ.
Max.
Forward voltage
Symbol
VF
-
-
1.1
V
Reverse current
IR
-
-
10
uA
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
Conditions
Unit
IF=0.7A
VR=400V
2010.10 - Rev.E
RR264M-400
Data Sheet
Electrical characteristics curves
Ta=150C
Ta=25C
Ta=150C
Ta=-25C
0.01
10000
1000
Ta=75C
100
Ta=25C
10
Ta=-25C
1
0
10
1
200
400
600
800
1000
0
1200
100
200
300
0
400
970
AVE:940.7mV
930
CAPACITANCE BETWEEN TERMINALS
: Ct(pF)
REVERSE CURRENT : IR(nA)
940
400
110
100
250
200
150
AVE:34.13nA
100
AVE:99.5pF
80
70
60
50
Ct DISPERSION MAP
100
10
50
AVE:44.0A
Ta=25C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
9
8
7
PEAK SURGE
FORWARD CURRENT : IFSM(A)
83
REVERSE RECOVERY TIME : trr(us)
8.3ms
100
90
IR DISPERSION MAP
1cyc
1cyc
30
120
300
VF DISPERSION MAP
Ifsm
Ifsm
25
Ta=25C
f=1MHz
VR=0V
n=10pcs
130
350
0
150
20
140
50
920
15
150
Ta=25C
VR=400V
n=30pcs
450
950
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
500
Ta=25C
IF=1A
n=30pcs
960
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
f=1MHz
0.1
0.001
FORWARD VOLTAGE : VF(mV)
Ta=125C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125C
0.1
100
100000
Ta=75C
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : IF(A)
1
6
5
4
AVE:4.860us
3
2
Ifsm
8.3ms 8.3ms
1cyc
50
1
0
0
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
1000
1cyc
8.3ms
50
0
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
100
IM=10mA
IF=0.35A
1.5
DC
1ms
time
Rth(j-a)
300us
100
Rth(j-c)
10
1
0.001
FORWARD POWER
DISSIPATION : Pf(W)
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
100
D=1/2
1
Sin( = 180)
0.5
0
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2010.10 - Rev.E
0.01
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
2
0.008
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
0.006
Sin(=180)
D=1/2
0.004
DC
0.002
0
Io
0A
Io
0V0
VR
0V
VR
t
1.5
DC
T
1
2
Io
0A0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
RR264M-400
D=t/T
VR=200V
Tj=150C
D=1/2
0.5
Sin(=180)
0
0
100
200
300
400
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
t
1.5
T
DC
1
D=t/T
VR=200V
Tj=150C
D=1/2
0.5
Sin(=180)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(℃)
Derating Curve"(Io-Ta)"
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(℃)
Derating Curve"(Io-Tc)"
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
AVE:28.4kV
20
15
10
5
AVE:6.90kV
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.10 - Rev.E
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R1010A