Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT30P04
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
The UTC UT30P04 is a P-channel enhancement mode Power
MOSFET, providing customers fast switching, ruggedized device
design, low on-resistance and cost-effectiveness with UTC’s
advanced technology.

FEATURES
* Low on-Resistance
* Fast Switching Speed

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT30P04L-TN3-R
UT30P04G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-465.C
UT30P04

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless Otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-40
V
±20
V
TC=25°C
-21
A
ID
Continuous Drain Current
TC=70°C
-17
A
Pulsed Drain Current (Note 2)
IDM
-70
A
Avalanche Current
IAS
-27
A
Avalanche Energy (Note 3)
L=0.1mH
EAS
36
mJ
TC=25°C
30
W
Power Dissipation
PD
TC=70°C
20
W
Operating Junction Temperature
TJ
-55~150
°C
Storage Temperature
TSTG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. VDD=-20V. Starting TJ=25°C.

SYMBOL
VDS
VGS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
40
4.1
UNIT
°C/W
°C/W
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UT30P04

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
IDSS
Gate- Source Leakage Current
On-State Drain Current (Note 1)
ON CHARACTERISTICS
Gate Threshold Voltage
IGSS
ID(ON)
Static Drain-Source On-State
Resistance (Note 1)
Forward Transconductance (Note 1)
Gate Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GATE CHARGE (Note 2)
Total Gate Charge
VGS(TH)
RDS(ON)
gFS
Rg
CISS
COSS
CRSS
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-32V, VGS=0V
VDS=-30V, VGS=0V, TJ=125°C
VDS=0V, VGS=±20V
VDS=-5V, VGS=-10V
-40
VDS=VGS, ID=-250µA
VGS=-5V, ID=-8A
VGS=-7V, ID=-8A
VGS=-10V, ID=-10A
VDS=-10V, ID=-10A
VGS=0V, VDS=0V, f=1.0MHz
-1
VGS=0V, VDS=-20V, f=1.0MHz
QG (VGS=-10V)
QG (VGS=-4.5V)
VDS=0.5V(BR)DSS, ID=-18A
QGS
QGD
Gate to Source Charge
Gate to Drain Charge
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time
tD(ON)
VGS=-10V, VDS=-20V, ID≈-10A,
Rise Time
tR
RGS=6Ω, RL=2Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
1
Drain-Source Diode Forward Voltage
VSD
IF=-10A, VGS=0V
Reverse Recovery Time
tRR
IF=-10A, dIF/dt=100A/µs
Reverse Recovery Charge
QRR
Notes: 1. Pulsde test: Pulse width ≤ 300µsec, duty cycle ≤ 2%.
2. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
V
1
10
±250
-70
-2.5
65
35
30
20
4.95
-3
73
50
40
µA
nA
A
V
mΩ
S
Ω
1090
175
91
pF
17
8.5
5.5
3
nC
6
16
26
10
ns
ns
ns
ns
-21
-1.2
15.5
7.9
A
V
ns
nC
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UT30P04
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, -ID (µA)
Drain Current, -ID (µA)

Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
14
14
12
VGS=-10V, ID=-10A
10
VGS=-5V, ID=-8A
8
6
VGS=-7V, ID=-8A
4
2
Drain Current, -ID (A)
Drain Current, -ID (A)
12
10
8
6
4
2
0
0
100
200
300
400 500
Drain to Source Voltage, -VDS (mV)
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage, -VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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