NTE2910 N−Channel Field Effect Transistor Switch, TO18 Type Package Features: D Fast Switching, tON ≤ 15ns Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Maximum Gate−to−Drain or Source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Maximum Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Maximum Continuous Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800mW Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +200°C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Note 1. Absolute Maximum Ratings are limiting values above which serviceability may be impaired. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate−to−Source Breakdown Voltage BVGSS IG = −1μA, VDS = 0V −40 − − V Gate−to−Source Cutoff Voltage VGS(off) VDS = 20V, ID = 1nA −0.5 − −3.0 V Gate−to−Source Forward Voltage VGS(F) IG = 1mAm, VDS = 0V − 0.7 1.0 V Drain−to−Source ON Voltage VDS(on) VGS = 0V, ID = 3mA − 0.25 0.4 V Drain−to−Source Saturation Current IDSS VDS = 20V, VGS = 0V, Note 2 5 − 30 mA Gate Leakage Current IGSS VGS = −20V, VDS = 0V − −5 −100 pA Gate Operating Current IG VDG = 15V, ID = 10mA − −5 − pA ID(off) VDS = 20V, VGS = −5V − 5 100 pA VGS = 0V, ID = 1mA − − 100 Ω Drain Cutoff Current Drain−to−Source ON Resistance rDS(on) Note 2. Pule Test: PW ≤ 300μs, Duty Cycle ≤ 3%. Rev. 12−11 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Forward Transconductance gfs VDS = 20V, ID = 1mA, f = 1kHz − 6 − mS Output Conductance gos VDS = 20V, ID = 1mA, f = 1kHz − 25 − μS VGS = 0V, ID = 0A, f = 1kHz − − 100 Ω Drain−to−Source ON Resistance rDS(on) Input Capacitance Ciss VDS = 20V, VGS = 0V, f = 1MHz − 12 14 pF Reverse Transfer Capacitance Crss VDS = 0V, VGS = −5V, f = 1MHz − 3.3 3.5 pF Equivalent Input Noise Voltage en VDS = 10V, ID = 10mA, f = 1kHz − 3 − nV/√Hz VDD = 10V, VGS(H) = 0V − 2 15 ns tr − 2 5 ns td(off) − 6 50 ns tf − 13 30 ns Switching Characteristics Turn−On Time td(on) Turn−Off Time .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Drain Source Gate 45° .041 (1.05)