NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode D G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note 2), ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse (t = 1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48A Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364mJ Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mJ Channel Temperature Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Channel−to−Case, Rth(ch−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Thermal Resistance, Channel−to−Ambient, Rth(ch−a) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/ voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. Note 2. Ensure that the channel temperature does not exceed +150C. Note 3. VDD = 90V, Tch = +25C (Initial), L = 4.3mH, IAR = 12A, RG = 25. Note 4. Repetitive rating: pulse width limited by maximum channel temperature. Rev. 9−14 Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Gate Leakage Current Gate−to−Source Breakdown Voltage Min Typ Max Unit IGSS VGS = 25V, VDS = 0V − − 10 A V(BR)GSS VDS = 0V, IG = 10A 30 − − V IDSS VDS = 500V, VGS = 0V − − 100 A Drain Cut−Off Current Drain−to−Source Breakdown Voltage Test Conditions V(BR)DSS VGS = 0V, ID = 10mA 500 − − V Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 − 4.0 V Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 6A − 0.4 0.52 Forward Transfer Admittance |yfs| VDS = 10V, ID = 6A 3.5 8.5 − S Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 1500 − pF Output Capacitance Coss − 180 − pF Reverse Transfer Capacitance Crss − 15 − pF − 50 − ns − 22 − ns Turn−On Time ton Rise Time tr Turn−Off Time toff − 170 − ns Fall Time tf − 36 − ns − 42 − nC VDD = 200V, ID = 6A, RL = 33, VGS = 10V, Duty 1%, tw = 10s Total Gate Charge Qg Gate−to−Source Charge Qgs − 23 − nC Gate−to−Drain (“Miller”) Charge Qgd − 19 − nC ID = 12A, VDD = 400V, VGS = 10V Source−Drain Ratings and Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Continuous Drain Reverse Current IDR Note 2 − − 12 A Pulse Drain Reverse Current IDRP Note 2 − − 48 A Diode Forward Voltage VDSF IDR = 12A, VGS = 0V − − −1.7 V Reverse Recovery Time trr − 1200 − ns Reverse Recovery Charge Qrr IDR = 12A, VGS = 0V, dIDR/dt = 100A/s − 16 − C Note 2. Ensure that the channel temperature does not exceed +150C. D G S .181 (4.6) .394 (10.0) .106 (2.7) .118 (3.0) .236 (6.0) Isol .590 (15.0) G D S .110 (2.8) .492 (12.5) Min .100 (2.54) .102 (2.6)