2911

NTE2911
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low Drain−Source ON−Resistance
D High Forward Transfer Admittance
D Low Leakage Current
D Enhancement Mode
D
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current (Note 2), ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulse (t = 1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mJ
Channel Temperature Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Channel−to−Case, Rth(ch−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W
Thermal Resistance, Channel−to−Ambient, Rth(ch−a) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings.
Note 2. Ensure that the channel temperature does not exceed +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 4.3mH, IAR = 12A, RG = 25.
Note 4. Repetitive rating: pulse width limited by maximum channel temperature.
Rev. 9−14
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Gate Leakage Current
Gate−to−Source Breakdown Voltage
Min
Typ
Max
Unit
IGSS
VGS = 25V, VDS = 0V
−
−
10
A
V(BR)GSS
VDS = 0V, IG = 10A
30
−
−
V
IDSS
VDS = 500V, VGS = 0V
−
−
100
A
Drain Cut−Off Current
Drain−to−Source Breakdown Voltage
Test Conditions
V(BR)DSS
VGS = 0V, ID = 10mA
500
−
−
V
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 6A
−
0.4
0.52

Forward Transfer Admittance
|yfs|
VDS = 10V, ID = 6A
3.5
8.5
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
1500
−
pF
Output Capacitance
Coss
−
180
−
pF
Reverse Transfer Capacitance
Crss
−
15
−
pF
−
50
−
ns
−
22
−
ns
Turn−On Time
ton
Rise Time
tr
Turn−Off Time
toff
−
170
−
ns
Fall Time
tf
−
36
−
ns
−
42
−
nC
VDD = 200V, ID = 6A, RL = 33,
VGS = 10V, Duty  1%, tw = 10s
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
23
−
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
19
−
nC
ID = 12A, VDD = 400V, VGS = 10V
Source−Drain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Drain Reverse Current
IDR
Note 2
−
−
12
A
Pulse Drain Reverse Current
IDRP
Note 2
−
−
48
A
Diode Forward Voltage
VDSF
IDR = 12A, VGS = 0V
−
−
−1.7
V
Reverse Recovery Time
trr
−
1200
−
ns
Reverse Recovery Charge
Qrr
IDR = 12A, VGS = 0V,
dIDR/dt = 100A/s
−
16
−
C
Note 2. Ensure that the channel temperature does not exceed +150C.
D
G
S
.181 (4.6)
.394 (10.0)
.106 (2.7)
.118
(3.0)
.236
(6.0)
Isol
.590
(15.0)
G
D
S
.110
(2.8)
.492
(12.5)
Min
.100 (2.54)
.102 (2.6)