2948

NTE2948
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO251 Type Package
Features:
D Low Drain−Source ON Resistance: RDS(ON) = 4 (Typ)
D High Forward Transfer Admittance: |yfs| = 0.6S (Typ)
D Low Leakage Current: IDSS = 100A (Max) (VDS = 400V)
D Enhancement Model: Vth = 2 to 4V (VDS = 10V, ID = 1mA)
D
G
S
Applications:
D DC−DC Converter
D Relay Drive
D Motor Drive
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current (Note 1), ID
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Repetitive Avalanche Energy (Note 3), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Thermal Resistance:
Channel−to−Case, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25C/W
Channel−to−Ambient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W
Note 1. Please use devices on condition that the channel temperature is below +150C.
Note 2. VDD = 90V, Tch = +25C (initial), L = 183mH, RG = 25.
Note 3. Repetitive rating: pulse width limited by maximum channel temperature.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Gate−Source Leakage Current
Symbol
Test Conditions
Min
Typ
Max
Unit
IGSS
VGS = 25V, VDS = 0V
−
−
10
A
BVGSS
IG = 10A, VDS = 0V
30
−
−
V
IDSS
VDS = 400V, VGS = 0
−
−
100
A
Drain−Source Breakdown Voltage
BVDSS
ID = 10mA, VGS = 0V
480
−
−
V
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 0.5A
−
4.2
5.5

Forward Transfer Admittance
|yfs|
VDS = 10V, ID = 0.5A
0.3
0.6
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 10V, f = 1MHz
−
145
−
pF
Output Capacitance
Coss
−
80
−
pF
Reverse Transfer Capacitance
Crss
−
35
−
pF
Turn−On Delay Time
td(on)
−
56
−
ns
−
14
−
ns
td(off)
−
75
−
ns
tf
−
26
−
ns
−
5.7
−
nC
Gate−Source Breakdown Voltage
Drain Cutoff Current
Rise Time
Turn−Off Delay Time
Fall Time
tr
VDD = 200V, VGS = 10V, ID = 0.5A,
RL = 400, Duty  1%, tw = 10s
Total Gate Charge
Qg
Gate−Source Charge
Qgs
−
3.0
−
nC
Gate−Drain (“Miller”) Charge
Qgd
−
2.7
−
nC
VGS = 10V, ID = 1A, VDD = 320V
Source−Drain Diode Ratings and Characteristics
Continuous Drain Reverse Current
IDR
Note 1
−
−
1
A
Pulse Drain Reverse Current
IDRP
Note 1
−
−
3
A
Diode Forward Voltage
VSDF
IDR = 1A, VGS = 0V
−
−
−1.7
V
Reverse Recovery Time
trr
IDR = 1A, VGS = 0V, dIDR/dt = 100A/s
−
650
−
ns
Reverse Recovery Charge
Qrr
−
14.6
Note 1. Please use devices on condition that the channel temperature is below +150C.
C
.256 (6.5)
.090 (2.3)
.035 (0.9)
.197 (5.0)
.059
(1.5)
D
.275
(7.0)
G
D
S
.295
(7.5)
0.02 (0.5)
.090 (2.3)