SHENZHENFREESCALE TK4P60DA

TK4P60DA
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V)
(2)
High forward transfer admittance: |Yfs| = 2.2 S (typ.)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 600 V)
(4)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
 unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
3.5
Drain current (pulsed)
(Note 1)
IDP
14
PD
80
W
(Note 2)
EAS
132
mJ
IAR
3.5
A
(Note 3)
EAR
8
mJ

Power dissipation
Single-pulse avalanche energy
(Tc = 25)
Avalanche current
Repetitive avalanche energy
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
1/8
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
1.56
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
125
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 18.9 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note:
2/8
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
 unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
IGSS
Drain cut-off current
Drain-source breakdown voltage
Test Condition
VGS = ±30 V, VDS = 0 V
IDSS
VDS = 600 V, VGS = 0 V
V(BR)DSS
Gate threshold voltage
Min
Typ.
Max
Unit


±1
µA


10
ID = 10 mA, VGS = 0 V
600


V
Vth
VDS = 10 V, ID = 1 mA
2.4

4.4
Drain-source on-resistance
RDS(ON)
VGS = 10 V, ID = 1.8 A

1.7
2.2
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1.8 A
0.6
2.2

S
Min
Typ.
Max
Unit

490

pF

3


55


18

 unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Test Condition
VDS = 25 V, VGS = 0 V, f = 1 MHz
Switching time (rise time)
tr
Switching time (turn-on time)
ton

40

tf

8

toff

55

Min
Typ.
Max
Unit

11

nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25
 unless otherwise specified)
25
Characteristics
Symbol
Test Condition
VDD ≈ 400 V, VGS = 10 V, ID = 3.5 A
Total gate charge (gate-source plus
gate-drain)
Qg
Gate-source charge
Qgs

6

Gate-drain charge
Qgd

5

Min
Typ.
Max
Unit
3.5
A
 unless otherwise specified)
25
6.4. Source-Drain Characteristics (Ta = 25
Characteristics
Test Condition
Symbol
Reverse drain current (DC)
(Note 1)
Reverse drain current (pulsed)
(Note 1)
IDR



IDRP



14
Diode forward voltage
VDSF
IDR = 3.5 A, VGS = 0 V


-1.7
V
Reverse recovery time
trr

1000

ns
Reverse recovery charge
Qrr
IDR = 3.5 A, VGS = 0 V
dIDR/dt = 100 A/µs

5.0

µC
Note 1: Ensure that the channel temperature does not exceed 150.
3/8
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7. Marking (Note)
Fig. 7.1 Marking
Note:
4/8
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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8. Characteristics Curves (Note)
5/8
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
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6/8
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 Capacitance - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
Fig. 8.12 Dynamic Input/Output Characteristics
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Fig. 8.13 rth(t)/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
7/8
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Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
8/8
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