2SK2865 2SK2865 Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 4.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.7 S (typ.) z Low leakage current Unit: mm : IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) z Enhancement mode Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 600 V Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V Gate−source voltage VGSS ±30 V (Note 1) ID 2 A Pulse (t = 1 ms) (Note 1) IDP 5 A Pulse (t = 100 μs) (Note 1) IDP 8 A Drain power dissipation (Tc = 25°C) PD 20 Single-pulse avalanche energy (Note 2) EAS Avalanche current DC Drain current JEDEC ― JEITA SC-64 W TOSHIBA 2-7B1B 93 mJ Weight: 0.36 g (typ.) IAR 2 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Thermal Characteristics Characteristic Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 1 JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 2SK2865 Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V IDSS VDS = 600 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 600 — — V Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON-resistance RDS (ON) VGS = 10 V, ID = 1 A — 4.2 5.0 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 0.8 1.7 — S Input capacitance Ciss — 380 — Reverse transfer capacitance Crss — 40 — Output capacitance Coss — 120 — tr — 15 — ton — 25 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf — 20 — Turn−off time toff — 80 — Total gate charge (gate−source plus gate−drain) Qg — 9 — Gate−source charge Qgs — 5 — Gate−drain (“Miller”) charge Qgd — 4 — VDD ≈ 480 V, VGS = 10 V, ID = 2 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 2 A IDRP t = 1 ms — — 5 A IDRP t = 100 μs — — 8 A Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 1000 — ns Reverse recovery charge Qrr IDR = 2 A, VGS = 0 V dIDR / dt = 100 A / μs — 3.5 — μC Pulse drain reverse current (Note 1) Marking K2865 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SK2865 3 2SK2865 4 2SK2865 5