NTE2925 MOSFET N−Ch, Enhancement Mode High Speed Switch

NTE2925
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ.
D High Forward Transfer Admittance: |Yfs| = 5.0S Typ.
D Low Leakage Current: IDSS = 100A Max. (VDS = 640V)
D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA)
D
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Drain Current (Note 2), ID
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Channel−to−Case, RthCH−C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W
Thermal Resistance, Channel−to−Ambient, RthCH−A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc. may cause this device to decrease in reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device.
Please handle with caution.
Note 2. Make sure that the device channel temperature is below +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 14.5mH, RG = 25, IAR = 6A
Note 4. Repetitive rating; pulse width limited by maximum channel temperature.
Rev. 9−14
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Gate Leakage Current
Gate−Source Breakdown Voltage
Drain Cut−Off Current
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
IGSS
VGS = 25V, VDS = 0V
−
−
10
A
V(BR)GSS
VDS = 0V, IG = 10A
30
−
−
V
IDSS
VDS = 640V, VGS = 0V
−
−
100
A
V(BR)DSS
VGS = 0V, ID = 10mA
800
−
−
V
Vth
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−Source On−Resistance
RDS(on)
VGS = 10V, ID = 3A
−
1.35
1.7

Forward Transfer Admittance
|Yfs|
VDS = 20V, ID = 3A
2.5
5.0
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
1400
−
pF
Output Capacitance
Coss
−
130
−
pF
Reverse Transfer Capacitance
Crss
−
30
−
pF
Turn−On Delay Time
td(on)
−
80
−
ns
−
25
−
ns
td(off)
−
220
−
ns
tf
−
65
−
ns
−
−
45
nC
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 400V, ID = 3A, RL = 133,
Note 5
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
−
25
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
−
20
nC
ID = 6A, VDS = 400V, VGS = 10V
Note 5. Duty Cycle  1%, tw = 10s.
Source−Drain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Drain Reverse Current
IDR
Note 2
−
−
6
A
Pulsed Drain Reverse Current
IDRP
Note 2
−
−
18
A
Diode Forward Voltage
VDSF
IDR = 6A, VGS = 0V
−
−
−1.7
V
Reverse Recovery Time
trr
−
1100
−
ns
Reverse Recovery Charge
Qrr
IDR = 6A, VGS = 0V,
diDR/dt = 100A/s
−
10
−
C
Note 2. Make sure that the device channel temperature is below +150C.
.181 (4.6)
.106
(2.7)
.394 (10.0)
.118
(3.0)
.236
(6.0)
Isol
.590
(15.0)
G
D
S
.110
(2.8)
.492
(12.5)
Min
.100 (2.54)
.102 (2.6)