NTE2939 MOSFET N−Ch, Enhancement Mode High Speed Switch

NTE2939
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low Drain−Source ON Resistance: RDS(ON) = 0.33 Typ.
D High Forward Transfer Admittance: |Yfs| = 6.5 S Typ.
D Low Leakage Current: IDSS = 10A Max. (VDS = 600V)
D Enhancement−Mode: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA)
D
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Drain Current (Note 2), ID
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 511mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Channel−to−Case, RthCH−C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W
Thermal Resistance, Channel−to−Ambient, RthCH−A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc. may cause this device to decrease in reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device.
Please handle with caution.
Note 2. Make sure that the device channel temperature is below +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 5.3mH, RG = 25, IAR = 13A
Note 4. Repetitive rating; pulse width limited by maximum channel temperature.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
IGSS
VGS = 30V, VDS = 0V
−
−
1
A
Drain Cut−Off Current
IDSS
VDS = 600V, VGS = 0V
−
−
10
A
Drain−Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 10mA
600
−
−
V
Vth
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−Source On−Resistance
RDS(on)
VGS = 10V, ID = 6.5A
−
0.33
0.43

Forward Transfer Admittance
|Yfs|
VDS = 10V, ID = 6.5A
1.8
6.5
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
2300
−
pF
Output Capacitance
Coss
−
250
−
pF
Reverse Transfer Capacitance
Crss
−
10
−
pF
Turn−On Delay Time
td(on)
−
100
−
ns
−
50
−
ns
td(off)
−
140
−
ns
tf
−
25
−
ns
−
40
−
nC
Gate Threshold Voltage
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 200V, ID = 6.5A, RL = 30,
Note 5
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
25
−
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
15
−
nC
ID = 13A, VDS = 400V, VGS = 10V
Note 5. Duty Cycle  1%, tw = 10s.
Source−Drain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Drain Reverse Current
IDR
Note 2
−
−
13
A
Pulsed Drain Reverse Current
IDRP
Note 2
−
−
52
A
Diode Forward Voltage
VDSF
IDR = 13A, VGS = 0V
−
−
−1.7
V
Reverse Recovery Time
trr
−
1600
−
ns
Reverse Recovery Charge
Qrr
IDR = 13A, VGS = 0V,
diDR/dt = 100A/s
−
20
−
C
Note 2. Make sure that the device channel temperature is below +150C.
.181 (4.6)
.106
(2.7)
.394 (10.0)
.118
(3.0)
.236
(6.0)
Isol
.590
(15.0)
G
D
S
.110
(2.8)
.492
(12.5)
Min
.100 (2.54)
.102 (2.6)