NTE2936 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.308Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 500V Absolute Maximum Ratings: Drain–to–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.1A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.77W/°C Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1024mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 20mH, IAS = 9.6A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C. Note 3. ISD ≤ 14A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, Starting TJ = +25°C. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Symbol BVDSS Test Conditions VGS = 0V, ID = 250µA ∆V(BR)DSS/ ID = 250µA ∆TJ VGS(th) VDS = 5V, ID = 250µA Min Typ Max Unit 500 – – V – 0.68 – V/°C 2.0 – 4.0 V Gate–Source Leakage Forward IGSS VGS = 30V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –30V – – –100 nA Drain–to–Source Leakage Current IDSS VDS = 500V – – 10 µA VDS = 400V, TC = +125°C – – 100 µA RDS(on) VGS = 10V, ID = 4.8A, Note 4 – – 0.4 Ω Forward Transconductance gfs VDS = 50V, ID = 4.8A, Note 4 – 8.96 – mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 2500 3250 pF Output Capacitance Coss – 295 340 pF Reverse Transfer Capacitance Crss – 130 150 pF Turn–On Delay Time td(on) – 23 55 ns – 26 60 ns td(off) – 125 260 ns tf – 37 85 ns – 121 157 nC – 16.2 – nC – 61 – nC (Body Diode) – – 9.6 A Static Drain–Source ON Resistance Rise Time Turn–Off Delay Time Fall Time tr Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain (“Miller”) Charge Qgd VDD = 250V, ID = 14A, RG = 6.2Ω, Note 4, Note 5 VGS = 10V, ID = 14A, VDS = 400V, Note 4, Note 5 Source–Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 – – 56 A Diode Forward Voltage VSD TJ = +25°C, IS = 9.6A, VGS = 0V, Note 4 – – 1.4 V Reverse Recovery Time trr – 437 – ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 14A, diF/dt = 100A/µs, Note 4 – 5.5 – µC Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%. Note 5. Essentially independent of operating temperature. .221 (5.6) .134 (3.4) Dia .123 (3.1) .630 (16.0) .315 (8.0) .866 (22.0) G D S .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)