NTE2968 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Low Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Low Static Drain–Source On–State Resistance Absolute Maximum Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 675mJ Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C Thermal Resistance: Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W Typical Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24°C/W Maximum Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 0.5mH, IAS = 45A, VDD = 25V, RG = 25Ω, Starting TJ = +25°C. Note 3. ISD ≤ 45A, di/dt ≤ 370A/µs, VDD ≤ BVDSS, Starting TJ = +25°C. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Symbol BVDSS Test Conditions VGS = 0V, ID = 250µA Breakdown Voltage Temperature DBV/DTJ ID = 250µA Coefficient Gate Threshold Voltage VGS(th) VDS = 5V, ID = 250µA Min Typ Max Unit 200 – – V – 0.20 – V/°C 2.0 – 4.0 V Gate–Source Leakage Forward IGSS VGS = 30V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –30V – – –100 nA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0 – – 10 µA VDS = 160V, TC = +150°C – – 100 µA RDS(on) VGS = 10V, ID = 22.5A, Note 4 – – 0.065 Ω Forward Transconductance gfs VDS = 40V, ID = 22.5A, Note 4 – 25.06 – mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 3030 3940 pF Output Capacitance Coss – 530 610 pF Reverse Transfer Capacitance Crss – 255 295 pF Turn–On Delay Time td(on) – 22 60 ns – 22 60 ns td(off) – 79 170 ns tf – 36 80 ns – 117 152 nC – 25 – nC – 48.8 – nC (Body Diode) – – 45 A Static Drain–Source ON Resistance Rise Time Turn–Off Delay Time Fall Time tr Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain (“Miller”) Charge Qgd VDD = 100V, ID = 45A, RG = 5.3Ω, Note 4, Note 5 VGS = 10V, ID = 45A, VDS = 160V, Note 4, Note 5 Source–Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 – – 180 A Diode Forward Voltage VSD TJ = +25°C, IS = 45A, VGS = 0V, Note 4 – – 1.5 V Reverse Recovery Time trr TJ = +25°C, IF = 45A, dIF/dt = 100A/µs – 210 – ns Reverse Recovery Charge Qrr – 1.67 – µC Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%. Note 5. Essentially independent of operating temperature. .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47)