INTERSIL HFA1135IB

HFA1135
TM
Data Sheet
June 2000
360MHz, Low Power, Video Operational
Amplifier with Output Limiting
The HFA1135 is a high speed, low power current feedback
amplifier build with Intersil’s proprietary complementary
bipolar UHF-1 process. This amplifier features user
programmable output limiting, via the VH and VL pins.
The HFA1135 is the ideal choice for high speed, low power
applications requiring output limiting (e.g. flash A/D drivers),
especially those requiring fast overdrive recovery times. The
limiting function allows the designer to set the maximum and
minimum output levels to protect downstream stages from
damage or input saturation. The sub-nanosecond overdrive
recovery time ensures a quick return to linear operation
following an overdrive condition.
Component and composite video systems also benefit from
this operational amplifier’s performance, as indicated by the
gain flatness, and differential gain and phase specifications.
File Number
Features
• User Programmable Output Voltage Limiting
• Fast Overdrive Recovery . . . . . . . . . . . . . . . . . . . . . . <1ns
• Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . 6.8mA
• High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 2MΩ
• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . . . . . . 360MHz
• Very Fast Slew Rate . . . . . . . . . . . . . . . . . . . . . . 1200V/µs
• Gain Flatness (to 50MHz) . . . . . . . . . . . . . . . . . . ±0.07dB
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02%
• Differential Phase . . . . . . . . . . . . . . . . . . . . 0.04 Degrees
• Pin Compatible Upgrade to CLC501 and CLC502
Applications
• Flash A/D Drivers
The HFA1135 is a low power, high performance upgrade for
the CLC501 and CLC502.
• High Resolution Monitors
Ordering Information
• Video Digitizing Boards/Systems
PART NUMBER
(BRAND)
TEMP.
RANGE (oC)
PKG.
NO.
PACKAGE
HFA1135IB
(H1135I)
-40 to 85
8 Ld SOIC
M8.15
HFA1135IB96
(H1135I)
-40 to 85
8 Ld SOIC
Tape and Reel
M8.15
HFA11XXEVAL
DIP Evaluation Board for High Speed
Op Amps
3653.5
• Professional Video Processing
• Multimedia Systems
• RGB Preamps
• Medical Imaging
• Hand Held and Miniaturized RF Equipment
• Battery Powered Communications
Pinout
HFA1135
(SOIC)
TOP VIEW
1
NC
1
-IN
2
+IN
3
V-
4
+
8
VH
7
V+
6
OUT
5
VL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
HFA1135
Absolute Maximum Ratings
TA = 25oC
Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSUPPLY
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Output Current (Note 1) . . . . . . . . . . . . . . . . .Short Circuit Protected
30mA Continuous
60mA ≤ 50% Duty Cycle
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >600V
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
165
Maximum Junction Temperature (Die Only) . . . . . . . . . . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
VSUPPLY = ±5V, AV = +1, RF = 510Ω (Note 3), RL = 100Ω, Unless Otherwise Specified
Electrical Specifications
PARAMETER
TEST CONDITIONS
(NOTE 2)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
INPUT CHARACTERISTICS
Input Offset Voltage
A
25
-
2
5
mV
A
Full
-
3
8
mV
B
Full
-
1
10
µV/oC
∆VCM = ±1.8V
A
25
47
50
-
dB
∆VCM = ±1.8V
A
85
45
48
-
dB
∆VCM = ±1.2V
A
-40
45
48
-
dB
∆VPS = ±1.8V
A
25
50
54
-
dB
∆VPS = ±1.8V
A
85
47
50
-
dB
Average Input Offset Voltage Drift
Input Offset Voltage
Common-Mode Rejection Ratio
Input Offset Voltage
Power Supply Rejection Ratio
∆VPS = ±1.2V
A
-40
47
50
-
dB
Non-Inverting Input Bias Current
A
25
-
6
15
µA
A
Full
-
10
25
µA
Non-Inverting Input Bias Current Drift
B
Full
-
5
60
nA/oC
∆VPS = ±1.8V
A
25
-
0.5
1
µA/V
∆VPS = ±1.8V
A
85
-
0.8
3
µA/V
∆VPS = ±1.2V
A
-40
-
0.8
3
µA/V
∆VCM = ±1.8V
A
25
0.8
2
-
MΩ
∆VCM = ±1.8V
A
85
0.5
1.3
-
MΩ
∆VCM = ±1.2V
A
-40
0.5
1.3
-
MΩ
Non-Inverting Input Bias Current
Power Supply Sensitivity
Non-Inverting Input Resistance
A
25
-
0.1
4
µA
A
Full
-
3
8
µA
B
Full
-
60
200
nA/oC
∆VCM = ±1.8V
A
25
-
3
6
µA/V
∆VCM = ±1.8V
A
85
-
4
8
µA/V
∆VCM = ±1.2V
A
-40
-
4
8
µA/V
∆VPS = ±1.8V
A
25
-
2
5
µA/V
∆VPS = ±1.8V
A
85
-
4
8
µA/V
Inverting Input Bias Current
Inverting Input Bias Current Drift
Inverting Input Bias Current
Common-Mode Sensitivity
Inverting Input Bias Current
Power Supply Sensitivity
A
-40
-
4
8
µA/V
Inverting Input Resistance
∆VPS = ±1.2V
C
25
-
40
-
Ω
Input Capacitance (Either Input)
C
25
-
1.6
-
pF
2
HFA1135
VSUPPLY = ±5V, AV = +1, RF = 510Ω (Note 3), RL = 100Ω, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
Input Voltage Common Mode Range (Implied by
VIO CMRR, +RIN, and -IBIAS CMS tests)
(NOTE 2)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
A
25, 85
±1.8
±2.4
-
V
A
-40
±1.2
±1.7
-
V
Input Noise Voltage Density (Note 5)
f = 100kHz
B
25
-
3.5
-
nV/√Hz
Non-Inverting Input Noise Current Density (Note 5)
f = 100kHz
B
25
-
2.5
-
pA/√Hz
Inverting Input Noise Current Density (Note 5)
f = 100kHz
B
25
-
20
-
pA/√Hz
AV = -1
C
25
-
500
-
kΩ
AV = +1, RF = 1.5kΩ
B
25
-
660
-
MHz
AV = +2, RF = 250Ω
B
25
-
360
-
MHz
AV = +2, RF = 330Ω
B
25
-
315
-
MHz
AV = -1, RF = 330Ω
B
25
-
290
-
MHz
Full Power Bandwidth
(VOUT = 5VP-P at AV = +2/-1,
4VP-P at AV = +1, Note 5)
AV = +1, RF = 1.5kΩ
B
25
-
90
-
MHz
AV = +2, RF = 250Ω
B
25
-
130
-
MHz
AV = -1, RF = 330Ω
B
25
-
170
-
MHz
Gain Flatness
(to 25MHz, VOUT = 0.2VP-P, Note 5)
AV = +1, RF = 1.5kΩ
B
25
-
±0.10
-
dB
AV = +2, RF = 250Ω
B
25
-
±0.02
-
dB
AV = +2, RF = 330Ω
B
25
-
±0.02
-
dB
AV = +1, RF = 1.5kΩ
B
25
-
±0.22
-
dB
AV = +2, RF = 250Ω
B
25
-
±0.07
-
dB
AV = +2, RF = 330Ω
B
25
-
±0.03
-
dB
A
Full
-
1
-
V/V
25
±3
±3.4
-
V
TRANSFER CHARACTERISTICS
Open Loop Transimpedance Gain (Note 5)
AC CHARACTERISTICS
AV = +2, RF = 250Ω, Unless Otherwise Specified
-3dB Bandwidth
(VOUT = 0.2VP-P, Note 5)
Gain Flatness
(to 50MHz, VOUT = 0.2VP-P, Note 5)
Minimum Stable Gain
OUTPUT CHARACTERISTICS
RF = 510Ω, Unless Otherwise Specified
Output Voltage Swing (Note 5)
AV = -1, RL = 100Ω
A
A
Full
±2.8
±3
-
V
Output Current (Note 5)
AV = -1, RL = 50Ω
A
25, 85
50
60
-
mA
A
-40
28
42
-
mA
B
25
-
90
-
mA
Output Short Circuit Current
Closed Loop Output Resistance (Note 5)
DC, AV = +2, RF = 250Ω
B
25
-
0.07
-
Ω
Second Harmonic Distortion
(AV = +2, RF = 250Ω, VOUT = 2VP-P, Note 5)
10MHz
B
25
-
-50
-
dBc
20MHz
B
25
-
-45
-
dBc
Third Harmonic Distortion
(AV = +2, RF = 250Ω, VOUT = 2VP-P, Note 5)
10MHz
B
25
-
-50
-
dBc
20MHz
B
25
-
-45
-
dBc
TRANSIENT CHARACTERISTICS
AV = +2, RF = 250Ω, Unless Otherwise Specified
Rise and Fall Times
(VOUT = 0.5VP-P, Note 5)
Rise Time
B
25
-
0.81
-
ns
Fall Time
B
25
-
1.25
-
ns
Overshoot (Note 4)
(VOUT = 0 to 0.5V, VIN tRISE = 2.5ns)
+OS
B
25
-
3
-
%
-OS
B
25
-
5
-
%
Overshoot (Note 4)
(VOUT = 0.5VP-P, VIN tRISE = 2.5ns)
+OS
B
25
-
2
-
%
-OS
B
25
-
10
-
%
Slew Rate
(VOUT = 4VP-P, AV = +1, RF = 1.5kΩ)
+SR
B
25
-
875
-
V/µs
-SR (Note 6)
B
25
-
510
-
V/µs
Slew Rate
(VOUT = 5VP-P, AV = +2, RF = 250Ω)
3
+SR
B
25
-
1530
-
V/µs
-SR (Note 6)
B
25
-
850
-
V/µs
HFA1135
VSUPPLY = ±5V, AV = +1, RF = 510Ω (Note 3), RL = 100Ω, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
(NOTE 2)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
Slew Rate
(VOUT = 5VP-P, AV = -1, RF = 330Ω)
+SR
B
25
-
2300
-
V/µs
-SR (Note 6)
B
25
-
1200
-
V/µs
Settling Time
(VOUT = +2V to 0V step, Note 5)
To 0.1%
B
25
-
23
-
ns
To 0.05%
B
25
-
33
-
ns
To 0.02%
B
25
-
45
-
ns
RL = 150Ω
B
25
-
0.02
-
%
RL = 75Ω
B
25
-
0.03
-
%
RL = 150Ω
B
25
-
0.04
-
Degrees
RL = 75Ω
B
25
-
0.06
-
Degrees
VIDEO CHARACTERISTICS
AV = +2, RF = 250Ω, Unless Otherwise Specified
Differential Gain (f = 3.58MHz)
Differential Phase (f = 3.58MHz)
OUTPUT LIMITING CHARACTERISTICS
AV = +2, RF = 250Ω, VH = +1V, VL = -1V, Unless Otherwise Specified
Limit Accuracy (Note 5)
VIN = ±2V, AV = -1,
RF = 510Ω
A
Full
-125
25
125
mV
Overdrive Recovery Time (Note 5)
VIN = ±1V
B
25
-
0.8
-
ns
Negative Limit Range
B
25
-5.0 to +2.5
V
Positive Limit Range
B
25
-2.5 to +5.0
V
Limit Input Bias Current
A
25
-
50
200
µA
A
Full
-
80
200
µA
Power Supply Range
C
25
±4.5
-
±5.5
V
Power Supply Current (Note 5)
A
Full
6.4
6.9
7.3
mA
POWER SUPPLY CHARACTERISTICS
NOTES:
2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
3. The optimum feedback resistor for the HFA1135 at AV = +1 is 1.5kΩ. The Production Tested parameters are tested with RF = 510Ω because
the HFA1135 shares test hardware with the HFA1105 amplifier.
4. Undershoot dominates for output signal swings below GND (e.g., 0.5VP-P), yielding a higher overshoot limit compared to the VOUT = 0V to 0.5V
condition. See the “Application Information” section for details.
5. See Typical Performance Curves for more information.
6. Slew rates are asymmetrical if the output swings below GND (e.g., a bipolar signal). Positive unipolar output signals have symmetric positive and
negative slew rates comparable to the +SR specification. See the “Application Information” section, and the pulse response graphs for details.
Application Information
Relevant Application Notes
The following Application Notes pertain to the HFA1135:
• AN9653-Use and Application of Output Limiting
Amplifiers
• AN9752-Sync Stripper and Sync Inserter for
Composite Video
• AN9787-An Intuitive Approach to Understanding
Current Feedback Amplifiers
• AN9420-Current Feedback Amplifier Theory and
Applications
• AN9663-Converting from Voltage Feedback to Current
Feedback Amplifiers
4
These publications may be obtained from Intersil’s web site
(www.intersil.com) or via our AnswerFAX system.
Optimum Feedback Resistor
Although a current feedback amplifier’s bandwidth
dependency on closed loop gain isn’t as severe as that of a
voltage feedback amplifier, there can be an appreciable
decrease in bandwidth at higher gains. This decrease may
be minimized by taking advantage of the current feedback
amplifier’s unique relationship between bandwidth and RF.
All current feedback amplifiers require a feedback resistor,
even for unity gain applications, and RF, in conjunction with
the internal compensation capacitor, sets the dominant pole
of the frequency response. Thus, the amplifier’s bandwidth is
inversely proportional to RF. The HFA1135 design is
optimized for a 250Ω RF at a gain of +2. Decreasing RF
decreases stability, resulting in excessive peaking and
overshoot (Note: Capacitive feedback will cause the same
HFA1135
The table below lists recommended RF values, and the
expected bandwidth, for various closed loop gains.
TABLE 1. OPTIMUM FEEDBACK RESISTOR
GAIN
(AV)
RF (Ω)
BANDWIDTH
(MHz)
-1
330
290
+1
1.5k
660
+2
250
330
360
315
+5
180
200
+10
250
90
Non-inverting Input Source Impedance
For best operation, the DC source impedance seen by the
non-inverting input should be ≥50Ω. This is especially
important in inverting gain configurations where the noninverting input would normally be connected directly to GND.
Pulse Undershoot and Asymmetrical Slew Rates
The HFA1135 utilizes a quasi-complementary output stage
to achieve high output current while minimizing quiescent
supply current. In this approach, a composite device
replaces the traditional PNP pulldown transistor. The
composite device switches modes after crossing 0V,
resulting in added distortion for signals swinging below
ground, and an increased undershoot on the negative
portion of the output waveform (see Figures 9, 13, and 17).
This undershoot isn’t present for small bipolar signals, or
large positive signals. Another artifact of the composite
device is asymmetrical slew rates for output signals with a
negative voltage component. The slew rate degrades as the
output signal crosses through 0V (see Figures 9, 13, and
17), resulting in a slower overall negative slew rate. Positive
only signals have symmetrical slew rates as illustrated in the
large signal positive pulse response graphs (see Figures 7,
11, and 15).
PC Board Layout
This amplifier’s frequency response depends greatly on the
care taken in designing the PC board. The use of low
inductance components such as chip resistors and chip
capacitors is strongly recommended, while a solid
ground plane is a must!
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
(0.1µF) chip capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Capacitance directly on the
output must be minimized, or isolated as discussed in the
next section.
5
Care must also be taken to minimize the capacitance to
ground at the amplifier’s inverting input (-IN), as this
capacitance causes gain peaking, pulse overshoot, and if
large enough, instability. To reduce this capacitance, the
designer should remove the ground plane under traces
connected to -IN, and keep connections to -IN as short as
possible.
An example of a good high frequency layout is the
Evaluation Board shown in Figure 2.
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly
terminated transmission line degrade the amplifier’s phase
margin resulting in frequency response peaking and
possible oscillations. In most cases, the oscillation can be
avoided by placing a resistor (RS) in series with the output
prior to the capacitance.
Figure 1 details starting points for the selection of this
resistor. The points on the curve indicate the RS and CL
combinations for the optimum bandwidth, stability, and
settling time, but experimental fine tuning is recommended.
Picking a point above or to the right of the curve yields an
overdamped response, while points below or left of the curve
indicate areas of underdamped performance.
RS and CL form a low pass network at the output, thus
limiting system bandwidth well below the amplifier bandwidth
of 660MHz (AV = +1). By decreasing RS as CL increases (as
illustrated by the curves), the maximum bandwidth is
obtained without sacrificing stability. In spite of this,
bandwidth still decreases as the load capacitance increases.
For example, at AV = +1, RS = 50Ω, CL = 20pF, the overall
bandwidth is 170MHz, but the bandwidth drops to 45MHz at
AV = +1, RS = 10Ω, CL = 330pF.
50
45
40
35
RS (Ω)
problems due to the feedback impedance decrease at higher
frequencies). At higher gains the amplifier is more stable, so
RF can be decreased in a trade-off of stability for bandwidth.
30
25
20
15
AV = +1
AV = +1
10
AV = +2, RF = 250Ω
5
0
0
40
80
120
160
200
240
280 320
360 400
LOAD CAPACITANCE (pF)
FIGURE 1. RECOMMENDED SERIES RESISTOR vs LOAD
CAPACITANCE
HFA1135
Evaluation Board
The performance of the HFA1135 may be evaluated using
the HFA11XX evaluation board (part number
HFA11XXEVAL). Please contact your local sales office for
information. When evaluating this amplifier at a gain of +2,
the two 510Ω gain setting resistors on the evaluation board
should be changed to 250Ω.
The layout and schematic of the board are shown in Figure 2.
NOTE: The SOIC version may be evaluated in the DIP board by
using a SOIC-to-DIP adapter such as Aries Electronics part number
08-350000-10.
BOARD SCHEMATIC
510Ω
of the amplifier. VH sets the upper output limit, while VL sets
the lower limit level. If the amplifier tries to drive the output
above VH, or below VL, the clamp circuitry limits the output
voltage at VH or VL (± the limit accuracy), respectively. The
low input bias currents of the limit pins allow them to be
driven by simple resistive divider circuits, or active elements
such as amplifiers or DACs.
Limit Circuitry
Figure 3 shows a simplified schematic of the HFA1135 input
stage, and the high limit (VH) circuitry. As with all current
feedback amplifiers, there is a unity gain buffer (QX1 - QX2)
between the positive and negative inputs. This buffer forces
-IN to track +IN, and sets up a slewing current of:
ISLEW = (V-IN - VOUT)/RF + V-IN/RG
510Ω
VH
50Ω
1
8
2
7
3
6
4
5
V+
0.1µF
10µF
+5V
QP3
50Ω
IN
10µF
0.1µF
VL
QN2
GND
QP1
GND
-5V
QP4
OUT
+IN
TOP LAYOUT
R1
Z
ILIMIT
+1
VV+
200Ω
QN1
QN5
QP2
VH
1
50kΩ
VH
QN6
QP6
QN3
QN4
QP5
+IN
OUT V+
VL VGND
VV-IN
-IN
RF
(EXTERNAL)
VOUT
FIGURE 3. HFA1135 SIMPLIFIED VH LIMIT CIRCUITRY
BOTTOM LAYOUT
This current is mirrored onto the high impedance node (Z) by
QX3-QX4, where it is converted to a voltage and fed to the
output via another unity gain buffer. If no limiting is utilized,
the high impedance node may swing within the limits defined
by QP4 and QN4. Note that when the output reaches its
quiescent value, the current flowing through -IN is reduced to
only that small current (-IBIAS) required to keep the output at
the final voltage.
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
Limiting Operation
General
The HFA1135 features user programmable output clamps to
limit output voltage excursions. Limiting action is obtained by
applying voltages to the VH and VL terminals (pins 8 and 5)
6
Tracing the path from VH to Z illustrates the effect of the limit
voltage on the high impedance node. VH decreases by 2VBE
(QN6 and QP6) to set up the base voltage on QP5 . QP5
begins to conduct whenever the high impedance node
reaches a voltage equal to QP5’s base voltage + 2VBE (QP5
and QN5). Thus, QP5 limits node Z whenever Z reaches VH .
R1 provides a pull-up network to ensure functionality with the
limit inputs floating. A similar description applies to the
symmetrical low limit circuitry controlled by VL.
HFA1135
As an example, a unity gain circuit with VIN = 2V, and VH = 1V,
would have ILIMIT = (2V - 1V)/1.5kΩ + 2V/∞ = 667µA (RG = ∞
for unity gain applications). Note that ICC increases by ILIMIT
when the output is limited.
Limit Accuracy
The limited output voltage will not be exactly equal to the
voltage applied to VH or VL. Offset errors, mostly due to VBE
mismatches, necessitate a limit accuracy parameter which is
found in the device specifications. Limit accuracy is a
function of the limiting conditions. Referring again to Figure
3, it can be seen that one component of limit accuracy is the
VBE mismatch between the QX6 transistors, and the QX5
transistors. If the transistors always ran at the same current
level there would be no VBE mismatch, and no contribution
to the inaccuracy. The QX6 transistors are biased at a
constant current, but as described earlier, the current
through QX5 is equivalent to ILIMIT. VBE increases as ILIMIT
increases, causing the limited output voltage to increase as
well. ILIMIT is a function of the overdrive level
((AV x VIN - VLIMIT) / VLIMIT), so limit accuracy degrades as
the overdrive increases. For example, accuracy degrades
from +15mV to +70mV when the overdrive increases from
100% to 200% (AV = +2, VH = 500mV, RF = 250Ω).
Benefits of Output Limiting
The plots of “Pulse Response Without Limiting” and “Pulse
Response With Limiting” (Figures 4 and 5) highlight the
advantages of output limiting. Besides the obvious benefit of
constraining the output swing to a defined range, limiting the
output excursions also keeps the output transistors from
saturating, which prevents unwanted saturation artifacts
from distorting the output signal. Output limiting also takes
advantage of the HFA1135’s ultra-fast overdrive recovery
time, reducing the recovery time from 2.3ns to 0.3ns, based
on the amplifier’s normal propagation delay of 1.2ns.
AV = +2, RF = 250Ω
4.0
2.0
IN
3.0
1.5
OUT
1.0
2.0
0.5
1.0
0
0
-0.5
-1.0
-1.0
-2.0
OUTPUT VOLTAGE (V)
ILIMIT = (V-IN - VOUT LIMITED)/RF + V-IN/RG .
limiting and the amplifier’s normal propagation delay, and it is
a strong function of the overdrive level. Figure 36 details the
overdrive recovery time for various limit and overdrive levels.
INPUT VOLTAGE (V)
When the output is limited, the negative input continues to
source a slewing current (ILIMIT) in an attempt to force the
output to the quiescent voltage defined by the input. QP5
must sink this current while limiting, because the -IN current
is always mirrored onto the high impedance node. The
limiting current is calculated as:
TIME (5ns/DIV.)
FIGURE 4. PULSE RESPONSE WITHOUT LIMITING
Consideration must also be given to the fact that the limit
voltages have an effect on amplifier linearity. The “Linearity
Near Limit Voltage” curves, Figures 34 and 35, illustrate the
impact of several limit levels on linearity.
AV = +2, RF = 250Ω
Limit Range
2.0
Unlike some competitor devices, both VH and VL have usable
ranges that cross 0V. While VH must be more positive than
VL , both may be positive or negative, within the range
restrictions indicated in the specifications. For example, the
HFA1135 could be limited to ECL output levels by setting
VH = -0.8V and VL = -1.8V. VH and VL may be connected to
the same voltage (GND for instance) but the result won’t be a
DC output voltage from an AC input signal. A 150mV - 200mV
AC signal will still be present at the output.
1.5
1.0
OUT
0.5
1.0
0
0
-0.5
-1.0
-1.0
Recovery from Overdrive
VH = +2.0V, VL = 0V
The output voltage remains at the limit level as long as the
overdrive condition remains. When the input voltage drops
below the overdrive level (VLIMIT/AV) the amplifier returns to
linear operation. A time delay, known as the Overdrive
Recovery Time, is required for this resumption of linear
operation. Overdrive recovery time is defined as the
difference between the amplifier’s propagation delay exiting
7
2.0
TIME (5ns/DIV.)
FIGURE 5. PULSE RESPONSE WITH LIMITING
OUTPUT VOLTAGE (V)
INPUT VOLTAGE (V)
IN
HFA1135
Typical Performance Curves
VSUPPLY = ±5V, TA = 25oC, RF = Value From the Optimum Feedback Resistor Table, RL = 100Ω,
Unless Otherwise Specified
3.0
300
AV = +2, RF = 250Ω
250
2.5
200
2.0
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
AV = +2, RF = 250Ω
150
100
50
0
-50
1.5
1.0
0.5
0
-0.5
-100
-1.0
TIME (5ns/DIV.)
TIME (5ns/DIV.)
FIGURE 6. SMALL SIGNAL POSITIVE PULSE RESPONSE
FIGURE 7. LARGE SIGNAL POSITIVE PULSE RESPONSE
200
2.0
AV = +2, RF = 250Ω
150
1.5
100
1.0
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
AV = +2, RF = 250Ω
50
0
-50
-100
-150
0.5
0
-0.5
-1.0
-1.5
-200
-2.0
TIME (5ns/DIV.)
TIME (5ns/DIV.)
FIGURE 8. SMALL SIGNAL BIPOLAR PULSE RESPONSE
FIGURE 9. LARGE SIGNAL BIPOLAR PULSE RESPONSE
300
250
3.0
AV = +1
AV = +1
2.5
2.0
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
200
150
100
50
0
-50
1.5
1.0
0.5
0
-0.5
-1.0
-100
TIME (5ns/DIV.)
FIGURE 10. SMALL SIGNAL POSITIVE PULSE RESPONSE
8
TIME (5ns/DIV.)
FIGURE 11. LARGE SIGNAL POSITIVE PULSE RESPONSE
HFA1135
Typical Performance Curves
VSUPPLY = ±5V, TA = 25oC, RF = Value From the Optimum Feedback Resistor Table, RL = 100Ω,
Unless Otherwise Specified (Continued)
200
AV = +1
1.5
1.0
100
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
150
2.0
AV = +1
50
0
-50
-100
-150
0.5
0
-0.5
-1.0
-1.5
-200
-2.0
TIME (5ns/DIV.)
FIGURE 12. SMALL SIGNAL BIPOLAR PULSE RESPONSE
FIGURE 13. LARGE SIGNAL BIPOLAR PULSE RESPONSE
3.0
300
AV = -1
AV = -1
250
2.5
200
2.0
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
TIME (5ns/DIV.)
150
100
50
0
-50
1.5
1.0
0.5
0
-0.5
-100
-1.0
TIME (5ns/DIV.)
FIGURE 14. SMALL SIGNAL POSITIVE PULSE RESPONSE
TIME (5ns/DIV.)
FIGURE 15. LARGE SIGNAL POSITIVE PULSE RESPONSE
200
2.0
AV = -1
150
1.5
100
1.0
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
AV = -1
50
0
-50
-100
-150
0.5
0
-0.5
-1.0
-1.5
-200
TIME (5ns/DIV.)
FIGURE 16. SMALL SIGNAL BIPOLAR PULSE RESPONSE
9
-2.0
TIME (5ns/DIV.)
FIGURE 17. LARGE SIGNAL BIPOLAR PULSE RESPONSE
HFA1135
Typical Performance Curves
VSUPPLY = ±5V, TA = 25oC, RF = Value From the Optimum Feedback Resistor Table, RL = 100Ω,
GAIN
0
AV = -1
-6
AV = +2, RF = 250Ω
PHASE
0
AV = -1
AV = +2, RF = 250Ω
AV = +1
90
180
270
360
1
10
100
0
GAIN
-3
VOUT = 2.5VP-P
-6
VOUT = 4VP-P
0
PHASE
AV = +1
1000
1
GAIN (dB)
GAIN
-3
VOUT = 2.5VP-P
-6
VOUT = 4VP-P
10
100
FREQUENCY (MHz)
PHASE
0
VOUT = 1VP-P
90
180
270
360
1
10
100
1000
AV = -1
3
VOUT = 1VP-P
GAIN
0
-3
VOUT = 2.5VP-P
-6
VOUT = 4VP-P
VOUT = 2.5VP-P
180
FIGURE 19. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES
VOUT = 1VP-P
0
90
360
PHASE
PHASE (DEGREES)
GAIN (dB)
3
VOUT = 4VP-P
VOUT = 2.5VP-P
VOUT = 1VP-P
270
FREQUENCY (MHz)
FIGURE 18. FREQUENCY RESPONSE
VOUT = 1VP-P
0
VOUT = 4VP-P
90
VOUT = 2.5VP-P
VOUT = 1VP-P
180
270
360
1000
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE 20. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES
VOUT = 4VP-P
NORMALIZED PHASE (DEGREES)
-3
AV = +2
3 R = 250Ω
F
PHASE (DEGREES)
AV = +1
NORMALIZED GAIN (dB)
VOUT = 200mVP-P
3
NORMALIZED PHASE (DEGREES)
NORMALIZED GAIN (dB)
Unless Otherwise Specified (Continued)
1000
FIGURE 21. FREQUENCY RESPONSE FOR VARIOUS OUTPUT
VOLTAGES
900
BANDWIDTH (MHz)
NORMALIZED GAIN (dB)
1000
3
0
AV = +1, VOUT = 4VP-P
-3
AV = +2, RF = 250Ω, VOUT = 5VP-P
-6
800
700
600
500
AV = +2, RF = 250Ω
400
-9
AV = -1, VOUT = 5VP-P
300
AV = -1
1
10
100
FREQUENCY (MHz)
FIGURE 22. FULL POWER BANDWIDTH
10
1000
200
-75
-50
-25
0
25
50
75
100
TEMPERATURE (oC)
FIGURE 23. -3dB BANDWIDTH vs TEMPERATURE
125
HFA1135
Typical Performance Curves
VSUPPLY = ±5V, TA = 25oC, RF = Value From the Optimum Feedback Resistor Table, RL = 100Ω,
Unless Otherwise Specified (Continued)
VOUT = 200mVP-P
AV = +2, RF = 250Ω
630
AV = +2, RF = 330Ω
0.1
200
GAIN
63
-0.1
-0.2
-0.3
-0.4
AV = +1
-0.5
20
PHASE
6.3
180
2.0
135
0.63
90
0.2
45
0
-0.6
1
10
FREQUENCY (MHz)
0.001
100
10
100
500
AV = +2, RF = 250Ω
OUTPUT RESISTANCE (Ω)
-30
-40
-50
-60
-70
-80
1K
100
10
1
0.1
0.01
-90
-100
0.3
1
10
100
FREQUENCY (MHz)
1000
1
10
100
FREQUENCY (MHz)
1000
FIGURE 27. OUTPUT RESISTANCE
FIGURE 26. REVERSE ISOLATION
100
100
0.05
0.025
0
-0.025
-0.05
-0.1
3
13
23
33
43
53
63
73
83
TIME (ns)
FIGURE 28. SETTLING TIME RESPONSE
11
93 103
INI-
10
10
ENI
INI+
1
0.1
1
1
10
FREQUENCY (kHz)
100
FIGURE 29. INPUT NOISE CHARACTERISTICS
NOISE CURRENT (pA/√Hz)
NOISE VOLTAGE (nV/√Hz)
0.1
SETTLING ERROR (%)
GAIN (dB)
1
FIGURE 25. OPEN LOOP TRANSIMPEDANCE
AV = +2, ±1
-20
0.1
FREQUENCY (MHz)
FIGURE 24. GAIN FLATNESS
-10
0.01
PHASE (DEGREES)
0
GAIN (kΩ)
NORMALIZED GAIN (dB)
0.2
HFA1135
Typical Performance Curves
VSUPPLY = ±5V, TA = 25oC, RF = Value From the Optimum Feedback Resistor Table, RL = 100Ω,
Unless Otherwise Specified (Continued)
-45
-40
HARMONIC DISTORTION (dBc)
HARMONIC DISTORTION (dBc)
AV = +2, RF = 250Ω
-45
-50
20MHz
-55
-60
10MHz
-65
-70
-5.0
-2.5
0
2.5
5.0
7.5
10.0
12.5
AV = +2, RF = 250Ω
-50
20MHz
-55
10MHz
-60
-65
-70
-75
-5.0
15.0
-2.5
0
150
VH = +500mV, RF = 250Ω
VH = +1.0V, RF = 250Ω
50
VH = +1.0V, RF = 510Ω
0
-50
VH = +2.0V, RF = 510Ω
-100
10.0
12.5
15.0
VL = -500mV, RF = 250Ω
AV = +2
VL = -1.0V, RF = 250Ω
100 V = -1.0V, R = 510Ω
L
F
VH = +500mV, RF = 510Ω
LIMIT ACCURACY (mV)
LIMIT ACCURACY (mV)
100
7.5
FIGURE 31. 3rd HARMONIC DISTORTION vs POUT
FIGURE 30. 2nd HARMONIC DISTORTION vs POUT
AV = +2
5.0
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
150
2.5
-150
50
VL = -500mV, RF = 510Ω
VL = -2.0V, RF = 250Ω
VL = -2.0V, RF = 510Ω
0
-50
-100
-150
VH = +2.0V, RF = 250Ω
-200
-200
0
100
200
300
400
500
0
100
200
OVERDRIVE (% OF VH)
FIGURE 32. VH LIMIT ACCURACY vs OVERDRIVE
2.0
AV = +2
RF = 250Ω
AV = +1
500
VH = +2V
1.8
1.6
1.6
VL = -2V
VH = +2V
1.4
LINEARITY ERROR (%)
LINEARITY ERROR (%)
400
FIGURE 33. VL LIMIT ACCURACY vs OVERDRIVE
2.0
1.8
300
OVERDRIVE (% OF VL)
1.2
VL = -1V
VH = +1V
1.0
0.8
0.6
VL = -500mV
VH = +500mV
0.4
VL = -2V
1.4
VH = +1V
1.2
VL = -1V
1.0
0.8
VL = -500mV
0.6
VH = +500mV
0.4
0.2
0.2
0
-2.0
-1.5
-1.0
0
-0.5
0.5
AV x VIN (V)
1.0
1.5
FIGURE 34. LINEARITY NEAR LIMIT VOLTAGE
12
2.0
0
-2.0
-1.5
-1.0
-0.5
0
0.5
AV x VIN (V)
1.0
1.5
FIGURE 35. LINEARITY NEAR LIMIT VOLTAGE
2.0
HFA1135
Typical Performance Curves
VSUPPLY = ±5V, TA = 25oC, RF = Value From the Optimum Feedback Resistor Table, RL = 100Ω,
Unless Otherwise Specified (Continued)
3.6
2.5
AV = -1
VH = +1V
|-VOUT| (RL = 100Ω)
3.5
+VOUT (RL = 100Ω)
2.0
3.4
VH = +2V
OUTPUT VOLTAGE (V)
OVERDRIVE RECOVERY TIME (ns)
AV = +2
RF = 250Ω
1.5
VH = +3V
VL = -2V
1.0
VL = -1V
VL = -3V
0.5
3.3
3.2
|-VOUT| (RL = 50Ω)
3.1
+VOUT (RL = 50Ω)
3.0
2.9
2.8
2.7
0
0
100
200
300
2.6
-50
400
-25
0
25
FIGURE 36. OVERDRIVE RECOVERY TIME vs OVERDRIVE
100
125
1.8
1.7
VOUT = 500mVP-P
FALL TIMES
1.6
7.0
AV = -1
RISE/FALL TIMES (ns)
1.5
SUPPLY CURRENT (mA)
75
FIGURE 37. OUTPUT VOLTAGE vs TEMPERATURE
7.1
6.9
6.8
6.7
1.4
AV = +1
1.3
1.2
AV = +2, RF = 250Ω
1.1
RISE TIMES
1.0
AV = -1
0.9
AV = +1
0.8
AV = +2, RF = 250Ω
0.7
4.0
50
TEMPERATURE (oC)
OVERDRIVE (% OF VH OR VL)
4.5
5.0
5.5
6.0
6.5
SUPPLY VOLTAGE ( ±V)
FIGURE 38. SUPPLY CURRENT vs SUPPLY VOLTAGE
13
7.0
0.6
-75
-50
-25
0
25
50
75
100
TEMPERATURE (oC)
FIGURE 39. RISE AND FALL TIMES vs TEMPERATURE
125
HFA1135
Die Characteristics
DIE DIMENSIONS
SUBSTRATE POTENTIAL (POWERED UP)
59 mils x 58.2 mils x 19 mils
1500µm x 1480µm x 483µm
Floating (Recommend Connection to V-)
PASSIVATION
METALLIZATION
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
TRANSISTOR COUNT
89
PROCESS
Bipolar Dielectric Isolation
Metallization Mask Layout
HFA1135
-IN
VH
V+
OUT
+IN
V-
14
VL
HFA1135
Small Outline Plastic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
N
INDEX
AREA
H
0.25(0.010) M
B M
E
INCHES
-B-
1
2
SYMBOL
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
α
A1
B
0.25(0.010) M
C A M
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.1890
0.1968
4.80
5.00
3
E
0.1497
0.1574
3.80
4.00
4
e
C
0.10(0.004)
B S
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
MILLIMETERS
MIN
0.050 BSC
1.27 BSC
0.2284
0.2440
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
8o
0o
N
α
5.80
-
H
8
0o
6.20
-
8
7
8o
Rev. 0 12/93
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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