IRFF9220 Data Sheet July 1998 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs • -2.5A, -200V • rDS(ON) = 1.5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol Formerly develpomental type TA17502. D Ordering Information IRFF9220 PACKAGE TO-205AF 2288.2 Features These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number BRAND G IRFF9220 NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-107 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9220 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL IRFF9220 -200 -200 -2.5 -10 ±20 20 0.16 290 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure 10) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time IDSS ID(ON) IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS MIN TYP MAX UNITS -200 - - V -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - -250 µA -2.5 - - A VDS > ID(ON) x rDS(ON)MAX, VGS = -10V VGS = ±20V - - ±100 nA ID = 1.5A, VGS = -10V, (Figures 8, 9) - 1.0 1.5 Ω VDS > ID(ON) x rDS(ON)MAX, ID = 1.5A, (Figure 12) 1 1.8 - S VDD = 0.5 x Rated BVDSS, ID = -2.5A, RGS = 9.1Ω, RL = 38.5Ω for BVDSS = -200V RL = 28.5Ω for BVDSS = -150V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - 15 40 ns - 25 50 ns - 80 120 ns - 50 75 ns VGS = -10V, ID = -2.5A, VDS = 0.8 x Rated BVDSS IG(REF) = -1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - 16 22 nC - 9 - nC - 7 - nC VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 350 - pF - 100 - pF Internal Drain Inductance LD Measured From the Drain Lead, 5mm (0.2in) From Header To Center of Die Internal Source Inductance LS Measured From the Source Lead, 5mm (0.2in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D - 30 - pF - 5.0 - nH - 15 - nH - - 6.25 oC/W - - 175 oC/W LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 4-108 Typical Socket Mount IRFF9220 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier MIN TYP MAX UNITS - - -2.5 A - - -10 A - - -1.5 V - 300 - ns - 1.9 - µC D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TC = 25oC, ISD = -2.5A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = -2.5A, dISD/dt = 100A/µs TJ = 150oC, ISD = -2.5A, dISD/dt = 100A/µs NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 69.6mH, RG = 25Ω, peak IAS = 2.5A (Figures 15, 16). Typical Performance Curves Unless Otherwise Specified -2.5 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 -2.0 -1.5 -1.0 -0.5 0 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE POWER DISSIPATION MULTIPLIER 1.2 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1.0 0.5 0.2 0.1 0.1 PDM 0.05 0.02 SINGLE PULSE 0.01 0.01 10-5 10-4 10-3 10-2 10-1 t 1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-109 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 1 10 IRFF9220 Typical Performance Curves Unless Otherwise Specified (Continued) -20 -5 10µs 100µs ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -10 1ms -1.0 10ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 100ms -0.1 DC TC = 25oC TJ = MAX RATED SINGLE PULSE -0.01 -1.0 -10V -9V -4 VGS = -6V -3 PULSE DURATION = 80µs -2 VGS = -5V -1 VGS = -4V 0 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) -1000 0 -10 VGS = -7V VGS = -8V VGS = -9V VGS = -10V VGS = -6V VGS = -5V -1 VGS = -4V 0 -4 -2 -3 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 -4 TJ = 125oC TJ = 25oC -3 TJ = -55oC -2 -1 0 -5 0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE VGS = -10V, ID = -1.5A 4 3 VGS = -10V 2 VGS = - 20V 0 12 8 ID, DRAIN CURRENT (A) 16 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-110 -10 2.5 PULSE DURATION = 2µs 4 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 5 0 -50 PULSE DURATION = 80µs VDS ≥ I D(ON) x rDS(ON) MAX FIGURE 6. SATURATION CHARACTERISTICS 1 -40 -5 ID(ON), DRAIN TO SOURCE CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80µs -2 -30 FIGURE 5. OUTPUT CHARACTERISTICS -5 -4 -20 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA -3 VGS = -7V VGS = -8V 20 2.0 1.5 1.0 0.5 0 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRFF9220 Typical Performance Curves Unless Otherwise Specified (Continued) 500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 CISS 300 200 COSS 100 0.85 CRSS 0.75 -40 0 40 80 120 0 160 -10 0 TJ , JUNCTION TEMPERATURE (oC) -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE -100 4.0 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80µs 3.2 TJ = -55oC 2.4 TJ = 25oC TJ = 125oC 1.6 0.8 0 0 -1 -2 -3 -4 -10 TJ = 150oC TJ = 25oC -1.0 -0.1 -0.4 -5 -0.6 ID , DRAIN CURRENT (A) -0.8 ID = -2.5A -5 -10 VDS = -100V VDS = -60V VDS = -40V -20 0 4 8 12 16 Qg(TOT), TOTAL GATE CHARGE (nC) 20 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-111 -1.2 -1.4 -1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 -15 -1.0 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) -20 -1.8 IRFF9220 Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - RG REQUIRED PEAK IAS + VDD DUT 0V VDD tP VGS IAS IAS VDS tP 0.01Ω BVDSS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 RL - DUT VGS + 10% 10% VDS VDD RG tf VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-112 0 IG(REF) FIGURE 20. GATE CHARGE WAVEFORMS IRFF9220 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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