IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17443. Ordering Information PART NUMBER July 1999 File Number 3274.2 Features • 2.2A, 250V • rDS(ON) = 2.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • High Input Impedance • 150oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol PACKAGE BRAND IRFR214 TO-252AA IRFR214 IRFU214 TO-251AA IRFU214 D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) 4-383 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR214, IRFU214 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR214, IRFU214 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 250 V Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 2.2 1.4 A A Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 8.8 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 25 W 0.20 W/oC Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas 61 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC TO 125oC Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 250 - - V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS =0.8 x Rated BVDSS, VGS = 0V TJ = 150oC - - 250 µA 2.2 - - A VGS = ±20V - - ±100 nA ID = 1.3A, VGS = 10V (Figure 8) - 1.6 2.000 Ω 1.1 - - S - 7.0 - ns - 7.6 - ns - 16 - ns - 7.0 - ns VGS = 10V, ID ≈ 5.6A, VDS = 0.8 x Rated BVDSS, (Figure 11) Gate Charge is Essentially Independent of Operating Temperature - - 10 nC - - 1.8 nC - - 5.5 nC VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 9) - 140 - pF Zero Gate Voltage Drain Current On-State Drain Current IDSS ID(ON) Gate to Source Leakage Current Drain to Source On Resistance (Note 4) Forward Transconductance (Note 4) Turn-On Delay Time IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VDS = ≥ 50V, IDS = 1.3A VDD = 0.5 x Rated BVDSS, ID ≈ 2.7A, RGS = 24Ω, RL = 4.5Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 42 - pF Reverse Transfer Capacitance CRSS - 9.6 - pF 4-384 IRFR214, IRFU214 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS Internal Drain Inductance LD Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances MIN TYP MAX UNITS - 4.5 - nH - 7.5 - nH - - 5.0 oC/W - - 110 oC/W MIN TYP MAX UNITS - - 2.2 A - - 8.8 A - - 2.0 V 97 - 390 ns 0.32 - 1.3 µC D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 2) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 4) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 2.2A, VGS = 0V(Figure 10) TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3) 4. VDD = 50V, starting TJ = 25oC, L = 21mH, RG = 25Ω, peak IAS = 2.2A. Unless Otherwise Specified 1.2 2.4 1.0 2.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 0 1.6 1.2 0.8 0.4 0 50 100 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 4-385 150 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE IRFR214, IRFU214 Typical Performance Curves Unless Otherwise Specified (Continued) 10 ZθJC, TRANSIENT THERMAL IMPEDANCE 0.5 1 0.2 0.1 PDM 0.05 0.1 0.02 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.01 10-5 10-4 10-3 10-2 0.1 1 10 t 1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TOP OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 10 100µs 1.0 1ms TC = 25oC TJ = MAX RATED SINGLE PULSE VGS = 15V VGS = 10V VGS = 8V VGS = 7V VGS = 6V 0 10 VGS = 5.5V VGS = 5V BOTTOM VGS = 4.5V 10-1 10ms PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC 0.1 1 10 100 1000 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS (TC = 25oC) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 10 VGS = 15V VGS = 10V VGS = 8V VGS = 7V VGS = 6V 100 VGS = 5.5V VGS = 5V BOTTOM VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TOP 10-1 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 150oC 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. OUTPUT CHARACTERISTICS (TC = 150oC) 4-386 TJ = 150oC 1 TJ = 25oC 0.1 10-2 10-3 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = ≥ 50V 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 10 IRFR214, IRFU214 Typical Performance Curves 500 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 5.6A VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGS 400 C, CAPACITANCE (pF) 2.0 ON RESISTANCE NORMALIZED DRAIN TO SOURCE 2.5 Unless Otherwise Specified (Continued) 1.5 1.0 300 CISS 200 COSS 0.5 100 CRSS 0 -60 -40 -20 0 20 40 60 0 10 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 102 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 101 101 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 150oC TJ = 25oC 100 10-1 0.6 ID = 2.7A VDS = 200V VDS = 125V VDS = 50V 16 12 8 4 0 0.8 1.0 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 0 1.4 FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE 2 4 6 Qg, GATE CHARGE (nC) 8 10 FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP + RG VDS IAS VDD VDD - VGS DUT 0V tP IAS 0 0.01Ω tAV FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT 4-387 FIGURE 13. UNCLAMPED ENERGY WAVEFORMS IRFR214, IRFU214 Test Circuits and Waveforms (Continued) tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 50% PULSE WIDTH 10% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 50% VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D IG(REF) VDS DUT G 0 S 0 IG CURRENT SAMPLING RESISTOR VGS VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT IG(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. 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