INTERSIL IRFP9150

IRFP9150
Data Sheet
August 1999
25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
File Number
2293.4
Features
• 25A, 100V
• rDS(ON) = 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
D
Formerly developmental type TA49230.
G
Ordering Information
PART NUMBER
IRFP9150
PACKAGE
TO-247
BRAND
S
IRFP9150
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-63
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFP9150
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 10kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRFP9150
-100
-100
-25
-18
-100
±20
150
1.2
1300
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA (Figure 10)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current (Note 2)
ID(ON)
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
MAX
UNITS
-
-
V
-2.0
-
-4.0
V
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
250
µA
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
-25
-
-
A
-
-
±100
nA
VGS = -10V, I D = -10A (Figure 8, 9)
-
0.090
0.150
Ω
gfs
VDS ≤ -10V, ID = -12.5A (Figure 12)
4
10
-
S
VDD = -50V, ID ≈ -25A, RG = 6.8Ω, RL = 2Ω
(Figures 17 and 18) MOSFET switching times are essentially independent of operating temperature).
-
16
24
ns
-
110
160
ns
td(OFF)
-
65
100
ns
tf
-
46
70
ns
-
82
120
nC
-
14
-
nC
-
42
-
nC
-
2400
-
pF
-
850
-
pF
-
400
-
pF
-
5.0
-
nH
-
13
-
nH
-
-
0.83
oC/W
-
-
30
0C/W
tr
Turn-Off Delay Time
TYP
1
rDS(ON)
td(ON)
Rise Time
MIN
Qg(TOT)
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = -10V, ID = -25A, VDS = 0.8 x Rated BVDSS
Ig(REF) = -1.5mA (Figures 14, 19, 20)
(Gate Charge is Essentially Independent Of Operating Temperature)
VGS = 0V, VDS = -25V, f = 1.0MHz
(Figure 11)
Internal Drain Inductance
LD
Measured From the Drain
Lead, 6mm (0.25in) From
the Package to the Center
of the Die
Internal Source Inductance
LS
Measured From the Source
Pin, 6mm (0.25in) From
Header to the Source
Bonding Pad
Modified MOSFET
Symbol Showing the Internal Device Inductances
D
LD
G
LS
S
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
4-64
Free Air Operation
IRFP9150
Source to Drain Diode Specifications
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
-
-
-25
A
-
-
-100
A
TJ = 25oC, ISD = -25A, VGS = 0V (Figure 13)
-
-0.9
-1.5
V
trr
TJ = 25oC, ISD = -25A, dISD/dt = 100A/µs
-
150
300
ns
QRR
TJ = 25oC, ISD = -25A, dISD/dt = 100A/µs
0.3
0.7
1.5
µC
Continuous Source to Drain Current
TEST CONDITIONS
ISD
Pulse Source to Drain Current
(Note 3)
Modified MOSFET Symbol
Showing the Integral Reverse P-N Junction Diode
ISDM
D
G
S
Source to Drain Diode Voltage (Note 2)
VSD
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3
4. VDD = 25V, start TJ = 25oC, L = 3.2mH, RG = 25Ω, peak IAS = 25A (Figures 15, 16).
Unless Otherwise Specified
1.2
-30
1.0
-25
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
Typical Performance Curves
0.8
0.6
0.4
-20
-15
-10
-5
0.2
0
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
10
1
DUTY CYCLE IN DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.10
t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
t1
PDM
10-4
10-2
10-1
10-3
t1, SQUARE WAVE PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-65
1
10
IRFP9150
Typical Performance Curves
Unless Otherwise Specified (Continued)
200
-100
VGS = 14V
IRFP9150,1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
10ms
IRFP9150,1
100ms
10
OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
0.1s
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
-80
-60
VGS = 8V
-40
VGS = 7V
VGS = 6V
1
1
1s
IRFP9150
IRFP9151
VGS = 4V
DC
10
VDS, DRAIN VOLTAGE (V)
0
-10
100
ID, DRAIN CURRENT (A)
VGS = 10V
-40
VGS = 8V
-30
VGS = 7V
-20
VGS = 6V
-10
VGS = 5V
VGS = 4V
0
0
-1
-2
-3
-4
-5
-10
-1
-0.1
0
-2
-4
-6
-8
VGS, GATE TO SOURCE VOLTAGE (V)
2.2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
ON RESISTANCE (mΩ)
rDS(ON), DRAIN TO SOURCE
-10
FIGURE 7. TRANSFER CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V
250
200
150
VGS = 20V
100
-50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≤ -50V
FIGURE 6. SATURATION CHARACTERISTICS
300
-40
-100
VDS, DRAIN TO SOURCE VOLTAGE (V)
350
-30
FIGURE 5. OUTPUT CHARACTERISTICS
ID(ON), DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
-20
VGS = 5V
(VDS), DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-50
VGS = 10V
VGS = 9V
-20
TC = 25oC
TJ = MAX RATED
VGS = 12V
50
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = -10A
1.4
1.0
0.6
0.2
0
-20
-40
-60
-80
-100
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-66
-40
0
40
80
TJ, JUNCTION TEMPERATURE (oC)
120
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
IRFP9150
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
4500
1.15
1.05
0.95
3500
3000
CISS
2500
2000
1500
COSS
1000
0.85
500
0.75
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
100
25oC
ISD, DRAIN CURRENT (A)
12
150oC
9
6
3
0
-10
-20
-30
ID, DRAIN CURRENT (A)
-40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
150oC
0.1
0.3
-50
25oC
1
0.5
0.7
VGS, GATE TO SOURCE VOLTAGE (V)
ID
= -25A
-5
VDS
= -80V
-10
VDS
= -50V
-15
VDS
20
40
60
= -20V
80
100
120
140
160
180
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-67
1.1
1.3
1.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
0
0.9
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-20
-50
-10
-20
-30
-40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
CRSS
0
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
gfs, TRANSCONDUCTANCE (S)
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
4000
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250µA
1.7
IRFP9150
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
-
RG
REQUIRED PEAK IAS
+
VDD
DUT
0V
VDD
tP
VGS
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
0
RL
-
DUT
VGS
+
10%
10%
VDS
VDD
RG
tf
90%
90%
VGS
0
10%
50%
50%
PULSE WIDTH
90%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
-VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0
VDS
DUT
12V
BATTERY
0.2µF
50kΩ
0.3µF
Qgs
Qg(TOT)
DUT
G
VGS
Qgd
D
VDD
0
S
Ig(REF)
IG CURRENT
SAMPLING
RESISTOR
+VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-68
0
Ig(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
IRFP9150
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