ROHM RF1001T2D_11

Data Sheet
Fast recovery diodes
RF1001T2D
Applications
General rectification
Dimensions (Unit : mm)
Structure
4.5±0.3
0.1
Features
1) Cathode common type.
(TO-220)
2) Ultra Low V F
3) Very fast recovery
4) Low switching loss
8.0
13.5MIN
5.0±0.2
8.0±0.2
12.0±0.2
15.0±0.4
0.2
(1) (2) (3)
1.2
Construction
Silicon epitaxial planar
2.8±0.2
0.1
10.0±0.3
0.1
1.3
0.8
0.7±0.1
0.05
(1) (2) (3)
2.6±0.5
ROHM : TO220FN
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive peak)
200
VRM
Reverse voltage (DC)
200
VR
Average rectified forward current (*1)
10
Io
Forward current surge peak (60Hz/1cyc)
80
IFSM
Junction temperature
150
Tj
Storage temoerature
55 to 150
Tstg
(*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal impedance
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Symbol
VF
Unit
V
V
A
A
C
C
Min.
-
Typ.
0.87
Max.
0.93
Unit
V
IR
-
0.01
10
μA
trr
-
15
-
30
2.5
ns
 j-c
1/3
C/W
Conditions
IF=5A
VR=200V
IF=0.5A, IR=1A, Irr=0.25*I R
JUNCTION TO CASE
2011.05 - Rev.D
Data Sheet
RF1001T2D
Electrical characteristics curves
10000
10
1000
Ta=150C
f=1MHz
Ta=125C
0.1
Ta=-25C
Ta=75C
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25C
1
Ta=125C
1000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Ta=150C
Ta=75C
100
Ta=25C
10
Ta=-25C
1
100
10
0.001
0 100 200 300 400 500 600 700 800 900 100 110 120
0 0 0
0.1
1
0
100
0
870
860
850
840
80
70
60
50
40
AVE:10.7nA
30
175
170
165
160
155
0
150
AVE:174.9pF
Ct DISPERSION MAP
1000
150
100
50
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
Ifsm
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
200
30
180
IR DISPERSION MAP
250
8.3ms
100
15
10
5
8.3ms
1cyc
10
AVE:14.5ns
AVE:167.0A
1
0
0
1
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
1cyc
8.3ms
100
10
20
Mounted on epoxy board
IF=5A
IM=100mA
15
Rth(j-a)
10
1ms
time
300us
Rth(j-c)
1
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100
0.001
DC
D=1/2
Sin(θ=180)
10
5
0
0.1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
FORWARD POWER
DISSIPATION:Pf(W)
1000
Ifsm
10
trr DISPERSION MAP
IFSM DISPERSION MAP
1
185
10
30
 j-c
190
20
VF DISPERSION MAP
300
25
Ta=25C
f=1MHz
VR=0V
n=10pcs
195
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
880
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
Ta=25C
VR=200V
n=30pcs
90
REVERSE CURRENT:IR(nA)
Ta=25C
IF=5A
n=30pcs
AVE:857.4mV
PEAK SURGE
FORWARD CURRENT:I FSM(A)
200
100
890
PEAK SURGE
FORWARD CURRENT:I FSM(A)
150
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE:V F(mV)
50
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2011.05 - Rev.D
30
30
Io
0V
VR
t
T
DC
15
25
D=t/T
VR=100V
20
Tj=150C
D=1/2
10
Sin(=180)
5
30
0A
Io
0V
VR
t
20
DC
15
T
D=t/T
VR=100V
Tj=150C
D=1/2
10
Sin(=180)
5
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
No break at 30kV
20
15
10
5
0
0
0
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0A
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
25
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RF1001T2D
0
25
50
75
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
3/3
125
150
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2011.05 - Rev.D
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A