ROHM RZB002P02

1.2V Drive Pch MOSFET
RZB002P02
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
VMN3
0.1
0.22
0.16
(3)
0.1
1.0
0.8
Features
1) High speed switing.
2) Ultra small package(VMN3).
3) Ultra low voltage drive(1.2V drive).
(1)
(2)
0.37
0.17
0.35
0.6
Abbreviated symbol : YK
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Type
Code
Basic ordering unit (pieces)
RZB002P02
Taping
T2L
8000

(3)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
10
V
Drain current
Source current
(Body Diode)
Continuous
ID
200
mA
Pulsed
Continuous
IDP
IS
*1
800
100
mA
mA
Pulsed
ISP
*1
800
mA
PD
*2
150
mW
Tch
Tstg
150
55 to +150
C
C
Symbol
Limits
Unit
833
C / W
Power dissipation
Channel temperature
Range of storage temperature
(1)
(2)
(1) GATE
(2) SOURCE
(3) DRAIN
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a) *
* Each terminal mounted on a recommended land.
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.11 - Rev.A
RZB002P02
Data Sheet
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=10V, VDS=0V
20
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=20V, VGS=0V
VGS (th)
0.3
-
1.0
V
VDS=10V, ID=100A
-
0.8
1.2
ID=200mA, VGS=4.5V
ID=100mA, VGS=2.5V
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Min.
-
1.0
1.5
-
1.3
2.2
-
1.6
3.5
ID=40mA, VGS=1.5V
-
2.4
9.6
ID=10mA, VGS=1.2V
l Yfs l *
0.2
-
-
S
ID=200mA, VDS=10V
Input capacitance
Ciss
-
115
-
pF
VDS=10V
Output capacitance
Coss
-
10
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
6
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
6
-
ns
ID=100mA, VDD 10V
tr *
-
4
-
ns
VGS=4.5V
Static drain-source on-state
resistance
Forward transfer admittance
RDS (on)*
Rise time

ID=100mA, VGS=1.8V
td(off) *
-
17
-
ns
RL=100
tf *
-
17
-
ns
RG=10
Total gate charge
Qg *
-
1.4
-
nC
ID=200mA, VDD
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
0.3
0.3
-
nC
nC
VGS=4.5V
Turn-off delay time
Fall time
10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.11 - Rev.A
RZB002P02
0.15
VGS= -1.5V
0.05
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
0.15
VGS= -2.5V
VGS= -2.0V
VGS= -1.8V
0.1
1
VGS= -1.2V
0.1
0.05
VGS= -1.2V
VGS= -1.0V
VGS= -1.0V
0
0.4
0.6
0.8
1
0
2
DRAIN-SOURCE VOLTAGE : -VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.001
0.01
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
100
0.01
0.1
0.001
1
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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©2010 ROHM Co., Ltd. All rights reserved.
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
10000
VGS= -1.5V
Pulsed
1000
VGS= -1.2V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.001
0.01
DRAIN-CURRENT : -ID[A]
100
0.001
VGS= -2.5V
Pulsed
1000
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
10000
1000
1.5
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
100
0.001
1
0.5
Fig.3 Typical Transfer Characteristics
1000
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
VGS= -1.8V
Pulsed
0
10
10000
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
8
100
100
10000
6
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
1000
4
Fig.2 Typical output characteristics( Ⅱ)
10000
Ta=25°C
Pulsed
0.001
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics( Ⅰ)
10000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
0.2
0.1
0.0001
0
0
VDS= -10V
Pulsed
Ta=25°C
Pulsed
VGS= -4.5V
DRAIN CURRENT : -ID[A]
VGS= -10.0V
VGS= -4.5V
VGS= -3.2V
0.2
Ta=25°C
Pulsed
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
0.2
Data Sheet
100
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)
2010.11 - Rev.A
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°
5
VGS=0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[]
VDS= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
0.01
0.1
0.5
1
0
td(on
1
0.1
DRAIN-CURRENT : -ID[A]
Fig.13 Switching Characteristics
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©2010 ROHM Co., Ltd. All rights reserved.
1
4
6
8
10
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
4
3
2
Ta=25°C
VDD= -10V
ID= -0.2A
RG=10Ω
Pulsed
1
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
10
Coss
Crss
1
0
0.01
2
GATE-SOURCE VOLTAGE : -VGS[V]
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : -VGS
[V]
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10
Pulsed
10
t
1
1.5
5
t
ID= -0.01A
2
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
1000
100
ID= -0.2A
3
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
td(off
Ta=25°C
Pulsed
4
0
0
1
DRAIN-CURRENT : -ID[A]
SWITCHING TIME : t [ns]
Data Sheet
1
1.0
REVERSE DRAIN CURRENT : -Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
RZB002P02
0
0.5
1
1.5
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
4/5
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
2010.11 - Rev.A
RZB002P02
Data Sheet
 Measurement circuits
Pulse Width
VGS
ID
VGS
VDS
10%
50%
50%
90%
RL
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate charge measurement circuit
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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5/5
2010.11 - Rev.A
Notice
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R1010A