ROHM 1SR154

Data Sheet
Rectifier diode
1SR154-400
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
2.0
①
②
5.0±0.2
5.0±0.3
4
4.2
1.2±0.3
1
4.5±0.2
Features
1)Small power mold type(PMDS)
2)High Reliability
2.0
2.6±0.15
2.6±0.2
0.1±0.02
0.1
1.5±0.2
1.5±
0.2
PMDS
2.0±0.2
Construction
Silicon diffused junction
Structure
ROHM : PMDS
JEDEC : SOD-106
①
② Manufacture Date
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (non-repetitive peak)
VRMS
Reverse voltage (repetitive peak)
VR
Average rectified forward current
Io
Forward current surge peak （60Hz/1cyc）
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Limits
Unit
V
V
A
A
500
400
1
30
150
55 to 150
C
C
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
1.1
Unit
V
Reverse current
IR
-
-
10
uA
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1/3
Conditions
IF=1A
VR=400V
2011.06 - Rev.E
Data Sheet
1SR154-400
Electrical characteristic curves (Ta=25C)
100000
1
Ta=150℃
Ta=75℃
100
Ta=125℃
f=1MHz
Ta=-25℃
0.01
1000
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
0.001
1
200
400
600
800
1000
1200
1
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
200
300
400
0
AVE:932.2mV
930
400
350
300
250
200
150
AVE:28.27nA
100
40
30
20
0
AVE:25.8pF
Ct DISPERSION MAP
100
3
REVERSE RECOVERY TIME:trr(us)
8.3ms
100
50
IR DISPERSION MAP
1cyc
50
AVE:64.0A
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
2.5
2
1.5
AVE:1.597us
1
0.5
0
0
Ifsm
8.3ms
50
0
1
IFSM DISPERSION MAP
50
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
IM=10mA
100
Rth(j-a)
IF=0.5A
D=1/2
1ms
time
300us
Rth(j-c)
10
1
0.1
0.001
100
2
Mounted on epoxy board
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
Ifsm
8.3ms
1cyc
trr DISPERSION MAP
100
30
60
0
VF DISPERSION MAP
Ifsm
25
Ta=25℃
f=1MHz
VR=0V
n=10pcs
70
10
150
20
80
50
920
15
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
950
940
Ta=25℃
VR=400V
n=30pcs
450
REVERSE CURRENT:IR(nA)
960
10
100
500
Ta=25℃
IF=1A
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
970
FORWARD VOLTAGE:V F(mV)
10
0.1
0
PEAK SURGE
FORWARD CURRENT:I FSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
Ta=150℃
PEAK SURGE
FORWARD CURRENT:I FSM(A)
FORWARD CURRENT:I F(A)
Ta=125℃
0.1
REVERSE CURRENT:IR(nA)
10000
DC
Sin(θ＝180)
1
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
1
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2011.06 - Rev.E
0.01
Sin(θ＝180)
0.006
D=1/2
0.004
DC
0.002
3
0A
0V
2.5
2
DC
Io
VR
t
T
D=1/2
D=t/T
VR=200V
Tj=150℃
1.5
1
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
3
0.008
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
1SR154-400
0.5
0
100
200
300
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
400
2
0A
Io
0V
VR
t
DC
T
1.5
D=t/T
VR=200V
Tj=150℃
D=1/2
1
Sin(θ＝180)
0.5
0
0
2.5
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)"
125
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)"
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
AVE:18.6V
20
15
10
AVE:5.00kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.E
Notice
Notes
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R1120A