Data Sheet Schottky Barrier Diode RB160L-90 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 6 ① ② 0.1±0.02 0.1 5.0±0.3 4 4.5±0.2 3)High reliability 1.2±0.3 4.2 Features 1)Small power mold type.（PMDS） 2) Low IR. PMDS Construction Silicon epitaxial planer 2.0±0.2 1.5±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Limits 95 90 1 30 150 40 to 150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A C C (*1)Mounting on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF Min. - Typ. - Max. 0.73 Unit V IF=1.0A IR - - 100 μA VR=90V 1/3 2011.04 - Rev.A Data Sheet RB160L-90 Ta=150℃ 1 Ta=125℃ 1000 10000 Ta=25℃ Ta=150℃ Ta=-25℃ 0.01 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 650 AVE:632.1mV 620 80 70 60 50 40 610 30 AVE:478.3nA σ:36.1612nA 20 AVE:4.655uA 180 170 160 150 140 120 100 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 100 150 8.3ms AVE:56.0A 50 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:7.40ns 10 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 200 100 8.3ms 8.3ms 1cyc 50 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 t 100 50 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 2 IM=10mA IF=0.5A Rth(j-a) 100 1ms time 300us Rth(j-c) 10 1 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) 150 1 Ifsm 0 0 0 Ifsm AVE:149.6pF 130 110 0 600 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 630 Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs 90 REVERSE CURRENT:IR(uA) 640 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 100 Ta=25℃ IF=1A n=30pcs 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1 0 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.1 f=1MHz 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ D=1/2 DC 1 Sin(θ＝180) 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.04 - Rev.A Data Sheet RB160L-90 3 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) 3 0A 0V D=1/2 0.6 DC 0.4 Sin(θ＝180) 0.2 2 t T DC VR D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 90 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 2.5 Io t T 2 VR D=t/T VR=45V Tj=150℃ DC 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 20 AVE:10.7kV 15 10 AVE:1.70kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A