RFL2N05, RFL2N06 Semiconductor 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA09378. • rDS(ON) = 0.95Ω • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER PACKAGE BRAND RFL2N05 TO-205AF RFL2N05 RFL2N05 TO-205AF RFL2N05 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 1497.2 RFL2N05, RFL2N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFL2N05 50 50 ±20 2 10 8.33 0.0667 -55 to 150 RLF2N06 60 60 ±20 2 10 8.33 0.0667 -55 to 150 UNITS V V V A A W W/ oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFL2N05 50 - - V RFL2N06 60 - - V VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V VDS = 0.8 x Rated BVDSS , TC = 25oC - - 1 µA TC = 125oC - - 25 µA VGS = ±20V, VDS = 0 - - ±100 nA ID = 1A, VGS = 10V - - 0.95 V ID = 2A, VGS = 10V - - 2.0 V ID = 4A, VGS = 15V - - 4.8 V ID = 1A, VGS = 10V, (Figures 6, 7) - - 0.95 Ω Drain to Source Breakdown Voltage Gate to Threshold Voltage BVDSS VGS(TH) Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) IGSS VDS(ON) rDS(ON) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Fall Time ID = 250µA, VGS = 0 gfs ID = 1A, VDS = 10V, (Figure 10) 400 - - S td(ON) ID ≈ 1A, VDD = 30V, RGS = 50Ω, VGS = 10V, (Figures 11, 12, 13) - 6 15 ns - 14 30 ns td(OFF) - 16 30 ns tf - 30 50 ns - - 200 pF - - 85 pF tr Turn-Off Delay Time TEST CONDITIONS Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) Output Capacitance COSS Reverse-Transfer Capacitance CRSS - - 30 pF Thermal Resistance Junction to Case RθJC - - 15 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 2A, dISD/dt = 50A/µs - 100 - ns NOTE: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 5-2 RFL2N05, RFL2N06 Typical Performance Curves Unless Otherwise Specified 2.5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ID , DRAIN CURRENT (A) 1.00 RFL2N06 RFL2N05 0.10 1 250µs PULSE TEST DUTY CYCLE ≤ 2% TC = 25oC 8 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 6 VGS = 10V VGS = 9V 4 VGS = 8V VGS = 7V 2 VGS = 6V 0 1000 0 1 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 1.4 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) ID, DRAIN CURRENT (A) VGS = 10V 250µs PULSE TEST -40oC 25oC 125oC 2 1 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 2 3 4 5 6 VDS , DRAIN TO SOURCE VOLTAGE (V) 7 FIGURE 4. SATURATION CHARACTERISTICS 4 VDS = 10V 250µs PULSE TEST VGS = 20V VGS = 5V 0.01 0 150 10 TJ = MAX RATED OPERATION IN THIS AREA LIMITED BY rDS(ON) 3 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10.00 ID , DRAIN CURRENT (A) 50 1.2 1.0 FIGURE 5. TRANSFER CHARACTERISTICS 25oC 0.8 -40oC 0.6 0.4 0.2 0 10 125oC 0 1 2 3 ID , DRAIN CURRENT (A) 4 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 5 RFL2N05, RFL2N06 Typical Performance Curves 1.5 ID = 1A VGS = 10V VGS = VDS ID = 250µA NORMALIZED GATE THRESHOLD VOLTAGE (V) 1.5 1.0 0.5 0 -50 0 50 100 150 TJ , JUNCTION TEMPERATURE (oC) 0 50 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS C, CAPACITANCE (PF) 200 160 120 CISS 80 COSS 40 CRSS 0 0 10 20 30 40 50 60 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 50 100 TJ , JUNCTION TEMPERATURE (oC) VDS = 10V 80µsPULSE TEST 1200 -40oC 1000 25oC 800 125oC 600 400 200 0 70 0 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 0.5 1 1.5 2 ID, DRAIN CURRENT (A) 10 BVDSS VDD = VDSS VDS , VOLTS (V) 30 GATE VDD = VDSS TO SOURCE VOLTAGE RL = 15 IG(REF) = 0.095mA VGS = 10V 0.75VDSS 0.75VDSS 0.50VDSS 0.50VDSS 0.25 VDSS 0.25VDSS 15 8 6 4 2 DRAIN TO SOURCE VOLTAGE 0 0 I 20 G(REF) IG(ACT) 2.5 FIGURE 10. FORWARD TRANSCONDUCTANCE vs DRAIN CURRENT 80 45 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE gfs, FORWARD TRANSCONDUCTANCE (S) f = 1MHz 0.5 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 240 1.0 VGS , VOLTS (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 Unless Otherwise Specified (Continued) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 3 RFL2N05, RFL2N06 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 0 10% 90% DUT VGS VGS 0 10% 50% 50% PULSE WIDTH FIGURE 13. RESISTIVE SWITCHING WAVEFORMS FIGURE 12. SWITCHING TIME TEST CIRCUIT 5-5