2960

NTE2960
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
D
Applications:
D SMPS
D DC−DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Drain−Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate−Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Channel−to−Case, Rth(ch−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13C/W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−Source Breakdown Voltage
V(BR)DSS VDS = 0V, ID = 1mA
900
−
−
V
Gate−Source Breakdown Voltage
V(BR)GSS VDS = 0V, IG = 100A
30
−
−
V
Gate−Source Leakage
IGSS
VGS = 25V, VDS = 0V
−
−
10
A
Zero Gate Voltage Drain Current
IDSS
VDS = 900V, VGS = 0
−
−
1.0
mA
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
2.0
3.0
4.0
V
Static Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 3A
−
1.54
2.00

Drain−Source On−State Voltage
VDS(on)
VGS = 10V, ID = 3A
−
4.62
6.00
V
|yfs|
VGS = 10V, ID = 3A
4.2
7.0
−
S
Forward Transfer Admittance
Rev. 10−13
Electrical Characteristics (Cont’d): (Tch = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
−
1380
−
pF
Input Capacitance
Ciss
Output Capacitance
Coss
−
140
−
pF
Reverse Transfer Capacitance
Crss
−
28
−
pF
Turn−On Delay Time
td(on)
−
25
−
ns
−
28
−
ns
td(off)
−
185
−
ns
tf
−
46
−
ns
−
1.0
1.5
V
Rise Time
tr
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
.114 (2.9)
VSD
VGS = 0V, VDS = 25V, f = 1MHz
Min
VDD = 200V, ID = 3A, VGS = 10V,
RGEN = RGS = 50
IS = 3A, VGS = 0V
.181 (4.6)
Max
.126 (3.2) Dia Max
.405 (10.3)
Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)