NTE2561 Silicon NPN Transistor Video Amplifier Features: D High Gain–Bandwidth Product D High Breakdown Voltage D Large Current D Small Reverse Transfer Capacitance Applications: D Wide–Band Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 80V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 5.0 µA DC Current Gain hFE VCE = 10V, IC = 50mA 30 – 200 VCE = 10V, IC = 100mA 20 – – VCE = 10V, IC = 100mA – 1.2 – GHz Gain–Bandwidth Product fT Output Capacitance Cob VCB = 30V, f = 1MHz – 4.4 – pF Reverse Transfer Capacitance Cre VCB = 30V, f = 1MHz – 3.8 – pF Collector–Emitter Saturation Voltage VCE(sat) IC = 300mA, IB = 30mA – – 0.6 V Base–Emitter Saturation Voltage VBE(sat) IC = 300mA, IB = 30mA – – 1.2 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 100 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 3 – – V .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab