2561

NTE2561
Silicon NPN Transistor
Video Amplifier
Features:
D High Gain–Bandwidth Product
D High Breakdown Voltage
D Large Current
D Small Reverse Transfer Capacitance
Applications:
D Wide–Band Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 80V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
–
–
5.0
µA
DC Current Gain
hFE
VCE = 10V, IC = 50mA
30
–
200
VCE = 10V, IC = 100mA
20
–
–
VCE = 10V, IC = 100mA
–
1.2
–
GHz
Gain–Bandwidth Product
fT
Output Capacitance
Cob
VCB = 30V, f = 1MHz
–
4.4
–
pF
Reverse Transfer Capacitance
Cre
VCB = 30V, f = 1MHz
–
3.8
–
pF
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 300mA, IB = 30mA
–
–
0.6
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 300mA, IB = 30mA
–
–
1.2
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
100
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, RBE = ∞
80
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 100µA, IC = 0
3
–
–
V
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab