IRFR9220, IRFU9220
Data Sheet
3.6A, 200V, 1.500 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17502.
July 1999
4015.3
Features
• 3.6A, 200V
• rDS(ON) = 1.500Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information
PART NUMBER
File Number
D
PACKAGE
BRAND
IRFR9220
TO-252AA
IF9220
IRFU9220
TO-251AA
IF9220
G
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-89
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFR9220, IRFU9220
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFR9220, IRFU9220
-200
-200
±20
3.6
Refer to Peak Current Curve
Refer to UIS Curve
42
0.33
-55 to 150
UNITS
V
V
V
A
300
260
oC
oC
W
W/oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
-200
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
-2.0
-
-4.0
V
VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC
-
-
-250
µA
Zero Gate Voltage Drain Current
IDSS
VGS = ±20V
-
-
±100
nA
ID = 2.2A, VGS = -10V (Figure 9)
-
-
1.500
W
VDD = -100V, ID = 3.9A,
RL = 24Ω, VGS = -10V,
RGS = 18Ω
(Figures 13, 16, 17)
-
-
50
ns
-
8.8
-
ns
-
27
-
ns
td(OFF)
-
7.3
-
ns
tf
-
19
-
ns
-
-
50
ns
-
20
-
nC
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IGSS
rDS(ON)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
Fall Time
Turn-Off Time
tOFF
Total Gate Charge
Qg(TOT)
Gate to Drain Charge
Qgd
Gate to Source Charge
Qgs
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 to -10V
VDD = -160V,
ID = 3.9A,
RL = 41Ω
IG(REF) = 1.45mA
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 12)
-
11
-
nC
-
3.3
-
nC
-
550
-
pF
-
110
-
pF
-
33
-
pF
Thermal Resistance Junction to Case
RθJC
-
-
3.00
oC/W
Thermal Resistance Junction to Ambient
RθJA
-
-
100
oC/W
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = -3.6A
-
-
-6.3
V
ISD = -3.6A, dISD/dt = -100A/µs
-
150
300
ns
0.97
2.0
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4-90
IRFR9220, IRFU9220
Typical Performance Curves
Unless Otherwise Specified
-4
1.0
ID , DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
-3
-2
-1
0.2
0
0
0
25
50
75
100
125
150
25
50
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
ZθJC , TRANSIENT THERMAL IMPEDANCE
75
100
125
150
TC , CASE TEMPERATURE (oC)
TC , CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
ID , DRAIN CURRENT (A)
-10
100µs
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
-1
10ms
100ms
DC
TC = 25oC
TJ = MAX RATED
-0.1
-1
VDSS MAX = -200V
-10
-100
VDS , DRAIN TO SOURCE VOLTAGE (V)
-500
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
4-91
IDM , PEAK CURRENT CAPABILITY (A)
-50
-20
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
150 – T C
I = I 25 -----------------------
125
VGS = -20V
-10
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-1
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
TC = 25oC
100
FIGURE 5. PEAK CURRENT CAPABILITY
101
IRFR9220, IRFU9220
Typical Performance Curves
Unless Otherwise Specified (Continued)
-10
-5
STARTING TJ = 25oC
STARTING TJ = 150oC
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-1
0.01
-3
VGS = -6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
-2
-1
VGS = -5V
VGS = -4.5V
0
0.1
1
tAV, TIME IN AVALANCHE (ms)
0
10
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
-55oC
25oC
-4
150oC
-2
-2
-3
-4
-5
-6
0.5
0
-80
-40
80
120
160
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
40
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
VGS = VDS, ID = 250µA
1.5
1.0
0.5
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
4-92
0
TJ , JUNCTION TEMPERATURE (oC)
2.0
0
-7.5
1.0
-7
FIGURE 8. TRANSFER CHARACTERISTICS
-40
-6.0
1.5
VGS, GATE TO SOURCE VOLTAGE (V)
0
-80
-4.5
PULSE DURATION = 80µs
VGS = -10V
ID = -2.2A
2.0
0
-1
-3.0
FIGURE 7. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = -15V
0
-1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
-8
-6
VGS = -7V
VGS = -20V
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
IDS(ON), DRAIN TO SOURCE CURRENT (A)
VGS = -10V
-4
ID, DRAIN CURRENT (A)
IAS , AVALANCHE CURRENT (A)
VGS = -8V
ID = 250µA
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
IRFR9220, IRFU9220
Typical Performance Curves
Unless Otherwise Specified (Continued)
VDS , DRAIN TO SOURCE VOLTAGE (V)
-200
C, CAPACITANCE (pF)
600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
400
300
COSS
100
CRSS
0
0
-10.0
VDD = BVDSS
-8.0
-160
CISS
500
200
VDD = BVDSS
-5
-10
-15
-20
VDS , DRAIN TO SOURCE VOLTAGE (V)
-120
RL = 51Ω
IG(REF) = -1.45mA
VGS = -10V
-80
0.75 BVDSS 0.75 BVDSS
-4.0
0.50 BVDSS 0.50 BVDSS
0.25 BVDSS 0.25 BVDSS
-2.0
-40
0
-25
20
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-6.0
IG(REF)
t, TIME (µs)
IG(ACT)
80
0.0
IG(REF)
IG(ACT)
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
REQUIRED PEAK IAS
-
RG
+
0V
VGS
VDD
DUT
VDD
tP
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
0
RL
DUT
VGS
RG
VDD
+
tf
10%
10%
VDS
VGS
0
90%
90%
10%
50%
50%
PULSE WIDTH
90%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-93
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
VGS , GATE TO SOURCE VOLTAGE (V)
700
IRFR9220, IRFU9220
Test Circuits and Waveforms
(Continued)
-VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0
VDS
DUT
12V
BATTERY
0.2µF
50kΩ
0.3µF
Qgs
Qg(TOT)
DUT
G
VGS
Qgd
D
VDD
0
S
Ig(REF)
IG CURRENT
SAMPLING
RESISTOR
0
+VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 18. GATE CHARGE TEST CIRCUIT
4-94
Ig(REF)
FIGURE 19. GATE CHARGE WAVEFORMS
IRFR9220, IRFU9220
PSPICE Electrical Model
.SUBCKT IRFU9220 2 1 3
REV 9/6/94
CA 12 8 723e-12
CB 15 14 733e-12
CIN 6 8 517e-12
RLDRAIN
DPLCAP
5
DRAIN
2
10
DBODY 5 7 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
LDRAIN
RSCL2
EBREAK 7 11 17 18 -244.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
ESG
+
RLGATE
RGATE
GATE
1
DBREAK
ESCL
50
6
8
RDRAIN
-
-
18
20 8
9
LDRAIN 2 5 1e-9
LGATE 1 9 2.609e-9
LSOURCE 3 7 2.609e-9
5
51
EVTO
+
IT 8 17 1
RSCL1
+ 51
16
VTO +
21
6
11
+
EBREAK
17
18
MOS2
DBODY
MOS1
LGATE
RIN
CIN
RLSOURCE
8
RSOURCE
7
3
SOURCE
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
LSOURCE
S1A
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 1.194
RGATE 9 20 2.17
RIN 6 8 1e9
RLDRAIN 2 5 10
RLGATE 1 9 26.09
RLSOURCE 3 7 26.09
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 90.1e-3
RVTO 18 19 RVTOMOD 1
12
S2A
13
8
S1B
14
13
13
15
17
RBREAK
S2B
18
RVTO
CB
CA
IT
+
6
EGS
8
-
+
EDS
-
14
5
8
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.77
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/4.6,6))}
.MODEL DBDMOD D (IS=2.56e-14 RS=8.09e-2 TRS1=-2.45e-3 TRS2=-1.33e-5 CJO=4.21e-10 TT=1.17e-7)
.MODEL DBKMOD D (RS=5.07 TRS1=-1.05e-3 TRS2=1.28e-5)
.MODEL DPLCAPMOD D (CJO=170e-12 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.58 KP=1.38 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.1e-3 TC2=-2.73e-6)
.MODEL RDSMOD RES (TC1=6.95e-3 TC2=2.23e-5)
.MODEL RSCLMOD RES (TC1=2.40e-3 TC2=-1.5e-5)
.MODEL RVTOMOD RES (TC1=-3.27e-3 TC2=-1.33e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.29 VOFF=3.29)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.29 VOFF=5.29)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.1 VOFF=-4.9)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.9 VOFF=0.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options; written by William J. Hepp and C. Frank Wheatley.
4-95
IRFR9220, IRFU9220
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4-96
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