SKiM459GD12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
VCES
Tj = 25 °C
1200
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
556
A
452
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
716
A
585
A
ICnom
SKiM® 93
ICRM
VGES
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
A
-20 ... 20
V
10
µs
-40 ... 175
°C
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
438
A
347
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
530
A
422
A
450
A
IFnom
IFRM
IFRM = 3 x IFnom
1350
A
IFSM
10 ms, sin 180°, Tj = 150 °C
2430
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C,
Tstg
Visol
AC sinus 50 Hz, t = 1 min
700
A
-40 ... 125
°C
2500
V
Characteristics
Symbol
Conditions
Inverter - IGBT
IC = 450 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
2.3
2.7
mΩ
rCE
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +150°C
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE, IC = 18 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
5
3.4
3.7
mΩ
5.8
6.5
V
0.1
0.3
mA
f = 1 MHz
26.4
nF
f = 1 MHz
1.74
nF
f = 1 MHz
1.41
nF
nC
QG
VGE=- 8 V...+ 15 V
2550
RGint
1.7
Tj = 150 °C
Ω
276
ns
Tj = 150 °C
55
ns
Tj = 150 °C
22
mJ
Tj = 150 °C
538
ns
tf
Tj = 25 °C
VCC = 600 V
IC = 450 A
RG on = 1.3 Ω
RG off = 1.3 Ω
di/dton = 8340 A/µs
di/dtoff = 3660 A/µs
Tj = 150 °C
114
ns
Eoff
VGE = +15/-15 V
Tj = 150 °C
57
mJ
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
0.092
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.059
K/W
td(on)
tr
Eon
td(off)
© by SEMIKRON
A
1350
Inverse - Diode
Remarks
GD
450
Rev. 8.0 – 12.05.2016
1
SKiM459GD12E4
Characteristics
Symbol
Conditions
Inverse - Diode
VF = VEC IF = 450 A
VF0
rF
SKiM® 93
SKiM459GD12E4
chiplevel
chiplevel
typ.
max.
Unit
Tj = 25 °C
2.14
2.46
V
Tj = 150 °C
2.07
2.38
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
1.87
2.1
mΩ
2.6
2.8
mΩ
Rth(j-s)
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 8880 A/µs T = 150 °C
j
VGE = +15/-15 V
T
j = 150 °C
VCC = 600 V
per Diode, λpaste=0.8 W/(mK)
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
IRRM
Trench IGBT Modules
chiplevel
min.
Qrr
Err
RCC'+EE'
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
A
80
µC
40
mJ
0.155
K/W
0.115
K/W
Module
10
LCE
Features
570
measured per
switch
Ts = 25 °C
Ts = 125 °C
w
15
nH
0.3
mΩ
0.5
mΩ
1042
g
Temperature Sensor
R100
TSensor = 100 °C (R25 = 5 kΩ)
339
Ω
B100/125
R(T) = R100exp[B100/125(1/T-1/373)];
T[K];
4096
K
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +150°C
GD
2
Rev. 8.0 – 12.05.2016
© by SEMIKRON
SKiM459GD12E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 8.0 – 12.05.2016
3
SKiM459GD12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 8.0 – 12.05.2016
© by SEMIKRON
SKiM459GD12E4
GD
© by SEMIKRON
Rev. 8.0 – 12.05.2016
5
SKiM459GD12E4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
6
Rev. 8.0 – 12.05.2016
© by SEMIKRON