SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES Tj = 25 °C 600 V IC λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C 897 A 713 A IC λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C 1089 A 873 A ICnom SKiM® 93 ICRM VGES Trench IGBT Modules SKiM909GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives tpsc Tj ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C A -20 ... 20 V 6 µs -40 ... 175 °C IF λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C 690 A 535 A IF λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C 826 A 645 A 900 A IFnom IFRM IFRM = 2 x IFnom 1800 A IFSM 10 ms, sin 180°, Tj = 150 °C 3537 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C, Tstg Visol AC sinus 50 Hz, t = 1 min 700 A -40 ... 125 °C 2500 V Characteristics Symbol Conditions Inverter - IGBT IC = 900 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel min. typ. max. Unit Tj = 25 °C 1.45 1.85 V Tj = 150 °C 1.70 2.10 V Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.85 0.90 V Tj = 25 °C 0.61 0.94 mΩ 0.94 1.33 mΩ 5.8 6.5 V 0.1 0.3 mA rCE • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C VGE = 15 V chiplevel VGE(th) VGE = VCE, IC = 14.4 mA ICES VGE = 0 V, VCE = 600 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5 f = 1 MHz 55.44 nF f = 1 MHz 3.456 nF f = 1 MHz 1.644 nF nC QG VGE=- 8 V...+ 15 V 7200 RGint 0.3 Tj = 150 °C Ω 570 ns Tj = 150 °C 160 ns Tj = 150 °C 36 mJ Tj = 150 °C 1290 ns tf Tj = 25 °C VCC = 300 V IC = 900 A RG on = 3 Ω RG off = 3 Ω di/dton = 5100 A/µs di/dtoff = 9000 A/µs Tj = 150 °C 90 ns Eoff VGE = +15/-7.5 V Tj = 150 °C 88 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.078 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.057 K/W td(on) tr Eon td(off) © by SEMIKRON A 1800 Inverse - Diode Remarks GD 900 Rev. 5.0 – 09.05.2016 1 SKiM909GD066HD Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 900 A VF0 rF SKiM® 93 SKiM909GD066HD chiplevel chiplevel typ. max. Unit Tj = 25 °C 1.52 1.75 V Tj = 150 °C 1.57 1.80 V Tj = 25 °C 1.00 1.10 V Tj = 150 °C 0.85 0.95 V Tj = 25 °C 0.58 0.72 mΩ 0.80 0.94 mΩ Rth(j-s) Tj = 150 °C IF = 900 A Tj = 150 °C di/dtoff = 4800 A/µs T = 150 °C j VGE = +15/-7.5 V T j = 150 °C VCC = 300 V per Diode, λpaste=0.8 W/(mK) Rth(j-s) per Diode, λpaste=2.5 W/(mK) IRRM Trench IGBT Modules chiplevel min. Qrr Err RCC'+EE' • IGBT 3 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor A 118 µC 29 mJ 0.135 K/W 0.104 K/W Module 10 LCE Features 500 measured per switch Ts = 25 °C Ts = 125 °C w 15 nH 0.3 mΩ 0.5 mΩ 1042 g Temperature Sensor R100 TSensor = 100 °C (R25 = 5 kΩ) 339 Ω B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C GD 2 Rev. 5.0 – 09.05.2016 © by SEMIKRON SKiM909GD066HD Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 5.0 – 09.05.2016 3 SKiM909GD066HD Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 5.0 – 09.05.2016 © by SEMIKRON SKiM909GD066HD GD © by SEMIKRON Rev. 5.0 – 09.05.2016 5 SKiM909GD066HD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. 6 Rev. 5.0 – 09.05.2016 © by SEMIKRON