datasheet

SKiM609GAR12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Ts = 25 °C
748
A
Ts = 70 °C
608
A
600
A
ICnom
ICRM
SKiM® 93
Trench IGBT Modules
SKiM609GAR12E4
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
1800
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Ts = 25 °C
139
A
Ts = 70 °C
110
A
600
A
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
IFRM
IFRM = 3xIFnom
1800
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Ts = 25 °C
1397
A
Ts = 70 °C
1107
A
1350
A
Tj
Freewheeling diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 3xIFnom
4050
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
6480
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Typical Applications*
Visol
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Characteristics
Symbol
IGBT
VCE(sat)
Remarks
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +150°C
VCE0
rCE
AC sinus 50 Hz, t = 1 min
Conditions
IC = 600 A
VGE = 15 V
chiplevel
VGE = 15 V
min.
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
1.8
2.0
m
Tj = 150 °C
VGE = 0 V
VCE = 1200 V
Cres
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
V
Unit
ICES
VCE = 25 V
VGE = 0 V
2500
max.
VGE=VCE, IC = 24 mA
Coes
A
°C
typ.
VGE(th)
Cies
700
-40 ... 125
Tj = 25 °C
5
2.6
2.8
m
5.8
6.5
V
0.1
0.3
mA
Tj = 150 °C
mA
f = 1 MHz
35.20
nF
f = 1 MHz
2.32
nF
f = 1 MHz
1.88
nF
3400
nC
1.3

GAR
© by SEMIKRON
Rev. 4 – 23.07.2013
1
SKiM609GAR12E4
Characteristics
Symbol
Conditions
td(on)
Eoff
VCC = 600 V
IC = 600 A
VGE = ±15 V
RG on = 4.1 
RG off = 4.1 
di/dton = 5000 A/µs
di/dtoff = 4400 A/µs
Rth(j-s)
per IGBT
tr
Eon
td(off)
tf
®
SKiM 93
Trench IGBT Modules
SKiM609GAR12E4
Inverse diode
VF = VEC IF = 150 A
VGE = 0 V
chiplevel
VF0
rF
IRRM
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Qrr
Err
Rth(j-s)
rF
Qrr
Err
Rth(j-s)
Unit
Tj = 150 °C
121
ns
Tj = 150 °C
136
mJ
Tj = 150 °C
808
ns
Tj = 150 °C
100
ns
Tj = 150 °C
83
mJ
ns
0.068
K/W
Tj = 25 °C
2.1
2.5
V
Tj = 150 °C
2.1
2.4
V
Tj = 25 °C
1.1
1.3
1.5
V
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
4.3
5.6
6.4
m
Tj = 150 °C
6.7
7.8
8.5
m
Tj = 25 °C
153
A
15
µC
9
mJ
1.7
Tj = 150 °C
0.501
K/W
1.9
V
1.4
1.7
V
Tj = 25 °C
1.1
1.3
1.5
V
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
0.5
0.6
0.7
m
0.9
0.9
m
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 5300 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
LCE
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Top = -40 … +150°C
max.
0.7
510
A
123
µC
39
mJ
0.048
K/W
Module
RCC'+EE'
Remarks
typ.
150
IF = 150 A
Tj = 150 °C
di/dtoff = 3300 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 600 A
VGE = 0 V
chiplevel
VF0
IRRM
min.
Tj = 150 °C
10
terminal-chip
15
nH
Ts = 25 °C
0.3
m
Ts = 125 °C
0.5
m
1042
g
w
Temperature Sensor
R100
TSensor = 100 °C (R25 = 5 k)
339

B100/125
R(T) = R100exp[B100/125(1/T-1/373)];
T[K];
4096
K
GAR
2
Rev. 4 – 23.07.2013
© by SEMIKRON
SKiM609GAR12E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 23.07.2013
3
SKiM609GAR12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4 – 23.07.2013
© by SEMIKRON
SKiM609GAR12E4
SKIM 93
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 23.07.2013
5