SiP32451, SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 m Load Switch in WCSP4 DESCRIPTION FEATURES SiP32451, SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32451, SiP32452 and SiP32453 have low input logic control threshold that can interface with low voltage control GPIO directly without extra level shift or driver. There is a pull down at this EN logic control pin. Turn on time is fast, less than 25 µs typically for input voltage of 1.2 V or higher. SiP32451 and SiP32452 have fast turn off delay time of less than 1 µs while SiP32453 features a guaranteed turn off delay of greater than 30 µs, typically 90 µs. SiP32451 features an output discharge for fast turn off. SiP32451, SiP32452 and SiP32453 are available in compact wafer level CSP package, WCSP4 0.8 mm x 0.8 mm with 0.4 mm pitch. • • • • • • • • Low input voltage, 0.9 V to 2.5 V Low RON, 55 m typical Fast turn on time Low logic control with hysteresis Reverse current blocking when disabled Integrated pull down at EN pin Output discharge (SiP32451) 4 bump WCSP 0.8 mm x 0.8 mm with 0.4 mm pitch package • Material categorization: For definitions of compliance please see www.vishay.com/doc?9991 APPLICATIONS • • • • • • • • Battery operated devices Smart phones GPS and PMP Computer Medical and healthcare equipment Industrial and instrument Cellular phones and portable media players Game console TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32451, SiP32452, SiP32453 CIN COUT EN EN GND GND GND Figure 1 - SiP32451, SiP32452, and SiP32453 Typical Application Circuit Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix ORDERING INFORMATION Temperature Range Package Marking Part Number AA SiP32451DB-T2-GE1 AB SiP32452DB-T2-GE1 AC SiP32453DB-T2-GE1 WCSP4: 4 Bumps (2 x 2, 0.4 mm pitch, 208 µm bump height, 0.8 mm x 0.8 mm die size) - 40 °C to 85 °C Note: GE1 denotes halogen-free and RoHS compliant ABSOLUTE MAXIMUM RATINGS Parameter Limit Supply Input Voltage (VIN) - 0.3 to 2.75 Enable Input Voltage (VEN) - 0.3 to 2.75 Output Voltage (VOUT) - 0.3 to 2.75 Maximum Continuous Switch Current (Imax.) Unit V 1.2 Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % duty cycle) A 2 ESD Rating (HBM) 4000 V Junction Temperature (TJ) - 40 to 150 °C Thermal Resistance (JA)a 280 °C/W Power Dissipation (PD)a 196 mW Notes: a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 3.6 mW/°C above TA = 70 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Input Voltage Range (VIN) Operating Junction Temperature Range www.vishay.com 2 Limit Unit 0.9 to 2.5 V - 40 to 125 °C For technical questions, contact: [email protected] Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix SPECIFICATIONS Parameter Operating Voltage Symbol VIN c Test Conditions Unless Specified VIN = 1 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits Min.a Typ.b Max.a Unit 0.9 - 2.5 V VIN = 1.2 V, VEN = VIN, OUT = open - 10 15 VIN = 2.5 V, VEN = VIN, OUT = open - 34 60 - - 30 - - 1 30 Quiescent Current IQ Off Supply Current IQ(off) Off Switch Current IDS(off) EN = GND, OUT = 0 V - - IRB VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V - 0.001 10 VIN = 1 V, IL = 200 mA, TA = 25 °C - 56 65 VIN = 1.2 V, IL = 200 mA, TA = 25 °C - 55 65 VIN = 1.8 V, IL = 200 mA, TA = 25 °C - 54 65 65 Reverse Blocking Current RDS(on) On-Resistance SiP32451 SiP32452, SiP32453 EN = GND, OUT = open VIN = 2.5 V, IL = 200 mA, TA = 25 °C On-Resistance Temp.-Coefficient Output Pulldown Resistance RPD VEN = 0 V, TA = 25 °C (SiP32451 only) - 54 3900 - ppm/°C - 425 550 VIL VIN = 1 V - - 0.1 Voltagec VIH VIN = 2.5 V 1.5 - - EN Input Leakage Output Turn-On Delay Time Output Turn-On Rise Time IEN td(on) tr VIN = 2.5 V, VEN = 0 V - - 1 VIN = 2.5 V, VEN = 2.5 V - 10 15 - 0.4 1 VIN = 2.5 V - 0.05 1 VIN = 1.2 V 10 20 30 5 9.8 20 - 0.25 1 - 0.15 1 SiP32453, VIN = 1.2 V 30 98 150 SiP32453, VIN = 2.5 V 30 86 150 VIN = 1.2 V VIN = 2.5 V SiP32451, SiP32452 VIN = 1.2 V Output Turn-Off Delay Time td(off) SiP32451, SiP32452 VIN = 2.5 V RLOAD = 10 , CL = 0.1 µF TA = 25 °C m - c EN Input Low Voltage EN Input High TCRDS µA V µA µs Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix PIN CONFIGURATION Index-Bump A1 1 IN 2 OUT A B W A B B A EN 1 IN 2 OUT GND GND Backside EN Bumpside Figure 2 - WCSP4 2 x 2 Package PIN DESCRIPTION Pin Number Name A1 IN A2 OUT B1 EN B2 GND Function This pin is the n-channel MOSFET drain connection. Bypass to ground through a 4.7 µF capacitor. This pin is the n-channel MOSFET source connection. Bypass to ground through a 0.1 µF capacitor. Enable input Ground connection 45 50 40 45 35 40 VIN = 2.5 V IQ - Quiescent Current (μA) I Q - Quiescent Current (μA) TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 30 25 20 15 35 30 25 20 15 VIN = 1.2 V 10 10 5 5 0 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V IN (V) 2.2 2.4 2.6 2.8 VIN = 1 V - 40 Figure 3 - Quiescent Current vs. Input Voltage 0 20 40 60 Temperature (°C) 80 100 Figure 5 - Quiescent Current vs. Temperature 1000 12 SiP32452 and SiP32453 SiP32452 and SiP32453 100 10 IQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) - 20 8 6 4 2 10 VIN = 2.5 V 1 0.1 VIN = 1.2 V 0.01 VIN = 1 V 0.001 0 0.8 1.2 1.6 2.0 2.4 2.8 0.0001 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 4 - Off Supply Current vs. Input Voltage Figure 6 - Off Supply Current vs. Temperature www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 1200 100 000 SiP32451 SiP32451 IIQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) 1100 1000 900 800 700 600 VIN = 2.5 V 10 000 VIN = 1.2 V 1000 100 VIN = 1 V 10 500 400 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 1 - 40 2.8 - 20 0 VIN (V) 40 60 80 100 Temperature (°C) Figure 7 - Off Supply Current vs. Input Voltage 1000 Figure 10 - Off Supply Current vs. Temperature 100 000 900 VIN = 2.5 V 10 000 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 20 800 700 600 500 400 1000 VIN = 1.2 V 100 VIN = 1 V 10 1 300 200 0.8 1.2 1.6 2 2.4 0 - 40 2.8 - 20 0 VIN (V) Figure 8 - Off Switch Current vs. Input Voltage 80 100 VIN = 1.2 V 70 62 RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) 60 75 64 IO = 1.2 A 58 IO = 0.5 A 56 54 1.2 1.6 2.0 VIN (V) Figure 9 - RDS(on) vs. VIN Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 2.4 IO = 200 mA 65 60 55 50 45 IO = 0.2 A 52 50 0.8 40 Figure 11 - Off Switch Current vs. Temperature 66 60 20 Temperature (°C) 2.8 40 - 40 - 20 0 20 40 60 Temperature (°C) 80 100 Figure 12 - RDS(on) vs. Temperature For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 2.0 12 VIN = 2.5 V 10 1.6 1.4 8 I IN (nA) IEN - EN Current (μA) VIN = 0.9 V 1.8 6 1.2 1.0 0.8 4 0.6 0.4 2 0.2 0 0 0 VEN (V) 1.8 2 VOUT (V) Figure 13 - IEN vs. VEN Figure 16 - Reverse Blocking Current vs. Output Voltage 0.5 1 1.5 2 0.8 2.5 1 1.2 1.4 1.6 2.2 2.4 2.6 2.8 1.6 100 VOUT = 2.5 V 1.4 VIN = 0.9 V EN Threshold Voltage (V) 80 I IN (nA) 60 40 1.2 1.0 VIH 0.8 VIL 0.6 0.4 20 0.2 0 - 40 0.0 - 20 0 20 40 60 Temperature (°C) 80 0.8 1.0 100 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 2.8 Figure 17 - EN Threshold Voltage vs. Input Voltage Figure 14 - Reverse Blocking Current vs. Temperature 460 440 SiP32451 only VOUT = VIN 435 RPD - Output Pulldown Resistance (Ω) RPD - Output Pulldown Resistance (Ω) 1.2 430 425 420 415 410 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 VIN (V) 440 430 420 410 400 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Figure 15 - Output Pulldown Resistance vs. Input Voltage www.vishay.com 6 450 SiP32451 only VOUT = VIN = 2.5 V Figure 18 - Output Pulldown Resistance vs. Temperature For technical questions, contact: [email protected] Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 14 0.100 0.090 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 0.085 0.080 0.075 0.070 0.065 0.060 12 11 10 9 8 7 6 0.055 0.050 - 40 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 13 tr - Rise Switching Time (μs) td(on) - Turn-On Delay Time (μs) 0.095 - 20 0 20 40 60 Temperature (°C) 80 5 - 40 100 Figure 19 - Turn-On Delay Time vs. Temperature 0 20 40 Temperature (°C) 60 80 100 Figure 21 - Rise Time vs. Temperature 0.30 120 SiP32451 and SiP32452 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 0.25 td(off) - Turn Off Delay Time (μs) td(off) - Turn Off Delay Time (μs) - 20 0.20 0.15 0.10 0.05 SiP32453 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 110 100 90 80 70 0.00 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Figure 20 - Turn-Off Delay Time vs. Temperature Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 60 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Figure 22 - Turn-Off Delay Time vs. Temperature For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix TYPICAL WAVEFORMS Figure 23 - Turn-On Time (VIN = 1.2 V) Figure 26 - Turn-On Time (VIN = 2.5 V) Figure 24 - SiP32451 and SiP32452 Turn-Off Time (VIN = 1.2 V) Figure 27 - SiP32451 and SiP32452 Turn-Off Time (VIN = 2.5 V) Figure 25 - SiP32453 Turn-Off Time (VIN = 1.2 V) Figure 28 - SiP32453 Turn-Off Time (VIN = 2.5 V) BLOCK DIAGRAM IN EN OUT Control Logic Charge Pump GND Figure 29 - Functional Block Diagram www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix DETAILED DESCRIPTION SiP32451, SiP32452 and SiP32453 are n-channel power MOSFET designed as high side load switch. Once enable the device charge pumps the gate of the power MOSFET to a constant gate to source voltage for fast turn on time. The mostly constant gate to source voltage keeps the on resistance low through out the input voltage range. When disable, the SiP32451 and SiP32452 pull the gate of the output n-channel low right away for a fast turn off delay while there is a build-in turn off delay for the SiP32453. The SiP32451 especially features a output discharge circuit to help discharge the output capacitor. The turn off delay for the SiP32453 is guaranteed to be at least 30 µs. Because the body of the output n-channel is always connected to GND, it prevents the current from going back to the input in case the output voltage is higher than the output. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 4.7 µF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor across VOUT and GND is recommended to insure proper slew operation. There is inrush current through the output MOSFET and the magnitude of the inrush current depends on the output capacitor, the bigger the COUT the higher the inrush current. There are no ESR or capacitor type requirement. Enable The EN pin is compatible with CMOS logic voltage levels. It requires at least 0.1 V or below to fully shut down the device and 1.5 V or above to fully turn on the device. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance, J-A = 280 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 280 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 196 mW. So long as the load current is below the 1.2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C is 65 m. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x T) Where TC is 3900 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 65 m x (1 + 0.0039 x (70 °C - 25 °C)) = 76.4 m The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in this case is 1.6 A. Under the stated input voltage condition, if the 1.6 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 1.2 A only as listed in the Absolute Maximum Ratings table. Protection Against Reverse Voltage Condition SiP32451, SiP32452 and SiP32453 can block the output current from going to the input in case where the output voltage is higher than the input voltage when the main switch is off. Thermal Considerations These devices are designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 280 °C/W) the device should be connected to a heat sink on the printed circuit board. Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 For technical questions, contact: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32451, SiP32452, SiP32453 Vishay Siliconix PACKAGE OUTLINE WCSP4: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height, 0.8 mm x 0.8 mm Die Size) Mark on backside of die Index-Bump A1 A 0.4 1 2 W A 4xØb B A e 4 x Ø 0.150 to 0.200 Solder mask dia. - Pad diameter + 0.1 2 D 1 B B 0.4 e D Note 3 A1 A Recommended Land Pattern All dimensions in millimeters Dimension A MILLIMETERS Nom. MAX. Min. Nom. MAX. 0.515 0.530 0.545 0.0202 0.0208 0.0214 0.270 0.0098 0.208 0.250 0.260 e D INCHES Min. A1 b Bump Note 2 0.0081 0.400 0.720 0.760 0.0102 0.0106 0.0157 0.800 0.0182 0.0193 0.0203 Notes: 1. Laser mark on the backside surface of die. 2. Bumps are SAC396. 3. 0.050 max. coplanarity. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63315 www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 63315 S12-2345-Rev. D, 8-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps (2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size) Mark on backside of die 1 A 2 1 2 W A B A B B e D 4 x Ø 0.15 to Ø 0.20 Solder mask dia. - Pad diameter + 0.1 0.4 e 4xØb D Pin 1 mark A 0.4 Note 3 A1 Recommended Land Pattern All dimensions in millimeters Bump Note 2 DWG-No: 6004 Notes (1) Laser mark on the backside surface of die (2) Bumps are SAC396 (3) 0.05 max. coplanarity DIM. A MILLIMETERS a NOM. MAX. MIN. 0.515 0.530 0.545 0.0202 A1 b 0.208 0.250 e D INCHES MIN. 0.260 0.760 MAX. 0.0208 0.0214 0.0081 0.270 0.0098 0.800 0.0182 0.400 0.720 NOM. 0.0102 0.0106 0.0157 0.0193 0.0203 Note a. Use millimeters as the primary measurement. S14-0844-Rev. C, 28-Apr-14 1 Document Number: 63459 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000