SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix 50 mΩ, Slew Rate Controlled Load Switch in WCSP DESCRIPTION FEATURES The SiP32460, SiP32461, and SiP32462 are slew rate controlled integrated high side load switches that operate over the input voltage range from 1.2 V to 5.5 V. • Low input voltage, 1.2 V to 5.5 V • Low Ron, 54 mΩ/typ. at 3 V • Slew rate control This series of design features slew rate control, reverse blocking when switch is off, output discharge, and control logic pull down. The devices are logic high enabled. • Compatible with 1.2 V to 3.3 V logic Available • 7.5 μs turn-on time at 5 V (SiP32462) The SiP32460, SIP32461, and SiP32462 are available in compact wafer level WCSP package, WCSP4 0.76 mm x 0.76 mm with 0.4 mm pitch. • Reverse current blocking when switch is off • Integrated output discharge switch (SiP32461) • Integrated pull down resistor at “EN” • For enable “Low” see SiP32467 and SiP32468 • 4-bump WCSP package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Smart phones • GPS and portable media players • Tablet computers • Medical and healthcare equipment • Industrial and instrumentation • Game consoles TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32460, SiP32461, SiP32462 CIN COUT EN EN GND GND GND Fig. 1 - Typical Application Circuit S14-0842-Rev. D, 28-Apr-14 Document Number: 67754 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix ORDERING INFORMATION PACKAGE ton (μs) RDISCHARGE MARK CODE TEMPERATURE RANGE SiP32460DB-T2-GE1 WCSP4 (2x2) 0.4 mm Pitch 300 No AF -40 °C to +85 °C SiP32461DB-T2-GE1 WCSP4 (2x2) 0.4 mm Pitch 300 Yes AG -40 °C to +85 °C SiP32462DB-T2-GE1 WCSP4 (2x2) 0.4 mm Pitch 7.5 No AH -40 °C to +85 °C PART NUMBER PIN CONFIGURATION Index-Bump A1 1 OUT 2 IN A A B GND 2 IN 1 OUT W A D B EN Backside EN GND Bumpside Fig. 2 - WCSP 2 x 2 Package DEVICE MARKING Row 1 Dot + W : Dot is A1 locator plus week code Row 2 AB : Mark code for part number SiP32460 = AF SiP32461 = AG SiP32462 = AH PIN DESCRIPTION (WSCP Package) PIN# A1 NAME FUNCTION OUT Switch output A2 IN Switch input B1 GND Ground connection B2 EN Switch on/off control. A pull down resistor is integrated TRUTH TABLE S14-0842-Rev. D, 28-Apr-14 EN SWITCH 1 ON 0 OFF Document Number: 67754 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMIT Reference to GND -0.3 to 6.5 Output Voltage VOUT Reference to GND -0.3 to 6.5 Output Voltage VOUT Pulse at 1 ms reference to GND (1) -1.6 Reference to GND -0.3 to 6.5 Supply Input Voltage VIN Enable Input Voltage EN Maximum Continuous Switch Current UNIT V 1.2 Maximum Pulse Switch Current Pulse at 1 ms, 10 % duty cycle A 2 ESD Rating (HBM) 4000 V Thermal Resistance 205 °C/W 300 mW Maximum Power Dissipation TA = 25 °C TEMPERATURE Operating Temperature -40 to 85 Operating Junction Temperature 125 Storage Temperature °C -65 to 150 Note (1) Negative current injection up to 300 mA Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM Input Voltage (VIN) 1.2 - 5.5 Output Voltage (VOUT) 1.2 - 5.5 UNIT V SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED VIN = 1.2 V to 5.5 V, TA = -40 °C to 85 °C (Typical values are at 25 °C) LIMITS MIN. TYP. MAX. UNIT POWER SUPPLY Quiescent Current IQ VIN = 3.3 V, IOUT = 0 mA - 4.5 7 Shutdown Current ISD OUT = GND - 0.01 2 Off Switch Current IDS(off) EN = GND, OUT = GND - 0.01 2 Reverse Blocking Current I(in)RB Out = 5 V, IN = 1.2 V, EN = 0 V, (Measured at IN pin) - 0.01 1 Out = 5 V, IN = 0 V, EN = 0 V, (Measured at IN pin) - 0.01 1 μA SWITCH RESISTANCE On Resistance RDS(on) Discharge Switch On Resistance RPD EN Pin Pull Down Resistor REN On Resistance Temperature Coefficient S14-0842-Rev. D, 28-Apr-14 TCRDS IOUT = 500 mA, VIN = 1.2 V, TA = 25 °C - 95 150 IOUT = 500 mA, VIN = 1.5 V, TA = 25 °C - 80 120 IOUT = 500 mA, VIN = 1.8 V, TA = 25 °C - 70 100 IOUT = 500 mA, VIN = 3 V, TA = 25 °C - 54 65 IOUT = 500 mA, VIN = 5 V, TA = 25 °C - 50 65 When VIN = 3 V at 25 °C - 80 - When VIN = 1.8 V at 25 °C - < 200 - EN = 1.2 V 1 2.6 5 - 2800 mΩ Ω MΩ ppm/°C Document Number: 67754 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix SPECIFICATIONS LIMITS SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED VIN = 1.2 V to 5.5 V, TA = -40 °C to 85 °C (Typical values are at 25 °C) EN Input Low Voltage VIL VIN = 1.5 V 0.4 - - EN Input High Voltage VIH VIN = 5.5 V - - 1 Switch Turn-ON Delay Time (SiP32461) ton_DLY RLOAD = 500 Ω , CL = 0.1 μF VIN = 5 V - 130 - Switch Turn-ON Rise Time (SiP32461) tr RLOAD = 500 Ω , CL = 0.1 μF VIN = 5 V - 170 - Switch Turn-ON Time (including Turn-ON Delay and Rise Time (SiP32462, fast switching) ton RLOAD = 500 Ω , CL = 0.1 μF VIN = 5 V - 7.5 20 Switch Turn-OFF Delay Time toff RLOAD = 500 Ω, CL = 0.1 μF, (50 % VIN to 90 % VOUT) - 2 - PARAMETER MIN. TYP. MAX. UNIT ON/OFF LOGIC V SWITCHING SPEED μs BLOCK DIAGRAM Reverse Blocking IN EN OUT Control Logic Charge Pump Turn On Slew Rate Control GND for SiP32461 only Fig. 3 - Functional Block Diagram S14-0842-Rev. D, 28-Apr-14 Document Number: 67754 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix 7 7 6 6 IQ - Quiescent Current (μA) IQ - Quiescent Current (μA) TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 5 4 3 2 1 VIN = 5.5 V VIN = 5.0 V 5 VIN = 3.3 V 4 VIN = 2.5 V 3 2 VIN = 1.2 V 1 0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 0 VIN (V) 60 80 100 Fig. 7 - Quiescent Current vs. Temperature 20 250 SiP32461 OUT = OPEN SiP32460, SiP32462 OUT = OPEN IQ(OFF) - Off Supply Current (nA) 200 150 100 50 0 15 10 5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 5.5 1.5 2.0 2.5 VIN (V) 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) Fig. 8 - Off Supply Current vs. Input Voltage Fig. 5 - Off Supply Current vs. Input Voltage 100 10 000 SiP32461 1000 SiP32460, SiP32462 VIN = 5.5 V IIQ(OFF) - Off Supply Current (nA) IIQ(OFF) - Off Supply Current (nA) 40 Temperature (°C) Fig. 4 - Quiescent Current vs. Input Voltage IQ(OFF) - Off Supply Current (nA) 20 100 VIN = 5.0 V 10 VIN = 3.3 V 1 0.1 VIN = 2.5 V 0.01 10 VIN = 5.5 V VIN = 5.0 V 1 0.1 VIN = 3.3 V 0.01 VIN = 1.2 V VIN = 1.2 V VIN = 2.5 V 0.001 0.001 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 6 - Off Supply Current vs. Temperature S14-0842-Rev. D, 28-Apr-14 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 9 - Off Supply Current vs. Temperature Document Number: 67754 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 250 10 000 1000 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) IN Current OUT = GND 200 150 100 50 VIN = 5.5 V 100 VIN = 5.0 V 10 VIN = 3.3 V 1 VIN = 2.5 V 0.1 0.01 0 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 0 20 60 80 100 Fig. 10 - Off Switch Current vs. Input Voltage Fig. 13 - Off Switch Current vs. Temperature 64 IO = 0.2 A VIN = 3.3 V 62 100 60 RDS - On-Resistance (mΩ) 95 90 85 80 IO = 0.5 A 75 IO = 1.5 A 70 IO = 1.0 A 65 IO = 0.1 A 55 1.0 1.5 58 56 54 52 50 48 46 44 42 IO = 0.2 A 50 2.0 40 2.5 3.0 3.5 4.0 4.5 5.0 - 40 5.5 - 20 0 20 40 60 80 100 Temperature (°C) VIN (V) Fig. 14 - RDS(on) vs. Temperature Fig. 11 - RDS(on) vs. Input Voltage 0 180 - 50 SiP32460, SiP32461 VIN = 5 V CL = 0.1 μF R L = 500 Ω 170 td(on) - Turn-On Delay Time (μs) - 100 VIN = 1.2 V - 150 IIN - Input Current (nA) 40 VIN (V) 105 RDS - On-Resistance (mΩ) - 20 Temperature (°C) 110 60 VIN = 1.2 V - 200 - 250 VIN = 0 V - 300 - 350 - 400 - 450 - 500 - 550 160 150 140 130 120 110 - 600 - 650 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VOUT (V) Fig. 12 - Reverse Blocking Current vs. Output Voltage S14-0842-Rev. D, 28-Apr-14 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 15 - Turn-on Delay Time vs. Temperature Document Number: 67754 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 0 10 -200 td(on) - Turn-On Delay Time (μs) VIN = 1.2 V IIN - Input Current (nA) -400 VIN = 0 V -600 -800 -1000 -1200 VOUT = 5 V -1400 SiP32462 VIN = 5 V CL = 0.1 μF R L = 500 Ω 9 8 7 6 -1600 5 -1800 - 40 - 20 0 20 40 60 80 - 40 100 - 20 0 Temperature (°C) 20 40 80 100 Fig. 19 - Turn-on Delay Time vs. Temperature Fig. 16 - Reverse Blocking Current vs. Temperature 0.9 220 0.85 SiP32460, SiP32461 VIN = 5 V CL = 0.1 μF RL = 500 Ω 210 0.8 VIH 0.75 200 VIL 0.7 tr - Rise Time (μs) EN Threshold Voltage (V) 60 Temperature (°C) 0.65 0.6 0.55 190 180 170 160 0.5 150 0.45 140 0.4 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 40 5.5 - 20 0 VIN (V) 40 60 80 100 Fig. 20 - Rise Time vs. Temperature Fig. 17 - EN Threshold Voltage vs. Input Voltage 10.00 1.0 td(off) - Turn-Off Delay Time (μs) SiP32462 VIN = 5 V CL = 0.1 μF RL = 500 Ω 0.9 tr - Rise Time (μs) 20 Temperature (°C) 0.8 0.7 0.6 0.5 SiP32460, SiP32462 VIN = 5 V CL = 0.1 μF RL = 500 Ω 9.00 8.00 7.00 6.00 5.00 - 40 - 20 0 20 40 60 80 Temperature (°C) Fig. 18 - Rise Time vs. Temperature S14-0842-Rev. D, 28-Apr-14 100 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 21 - Turn-off Delay Time vs. Temperature Document Number: 67754 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 85 SiP32461 VIN = 5 V CL = 0.1 μF RL = 500 Ω 4.00 SiP32461 RPD - Output Pulldown Resistance (Ω) td(off) - Turn-Off Delay Time (μs) 5.00 3.00 2.00 1.00 80 VIN = 3.3 V IOUT = 5 mA 75 70 65 60 55 0.00 - 40 - 20 0 20 40 60 80 100 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Fig. 22 - Turn-off Delay Time vs. Temperature Fig. 23 - Output Pulldown Resistance vs. Temperature TYPICAL WAVEFORMS SiP32460/SiP32461 SiP32460/SiP32461 VEN (2V/div) VEN (500mV/div) VOUT (500mV/div) VOUT (2V/div) IOUT (10mA/div) Time (100μs/div) Fig. 24 - Turn-on Time S14-0842-Rev. D, 28-Apr-14 VIN = 1.2V RL = 500Ω CL = 0.1μF IOUT (20mA/div) Time (100μs/div) VIN = 5.0V RL = 500Ω CL = 0.1μF Fig. 25 - Turn-on Time Document Number: 67754 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS VEN (500mV/div) SiP32460/SiP32461 SiP32460/SiP32461 VEN (2V/div) VOUT (500mV/div) VOUT (2V/div) IOUT (10mA/div) IOUT (20mA/div) VIN = 1.8V RL = 500Ω CL = 0.1μF Time (100μs/div) Time (100μs/div) VIN = 5.5V RL = 500Ω CL = 0.1μF Fig. 29 - Turn-on Time Fig. 26 - Turn-on Time SiP32460/SiP32461 SiP32462 VEN (500mV/div) VEN (2V/div) VOUT (500mV/div) VOUT (2V/div) IOUT (10mA/div) IOUT (20mA/div) Time (100μs/div) VIN = 3.3V RL = 500Ω CL = 0.1μF Fig. 30 - Turn-on Time Fig. 27 - Turn-on Time VEN (500mV/div) SiP32462 VOUT (500mV/div) Fig. 28 - Turn-on Time S14-0842-Rev. D, 28-Apr-14 SiP32462 VEN (2V/div) VOUT (2V/div) IOUT (10mA/div) Time (10μs/div) Time (100μs/div) VIN = 1.2V RL = 500Ω CL = 0.1μF VIN = 1.8V RL = 500Ω CL = 0.1μF IOUT (50mA/div) Time (2μs/div) VIN = 5.5V RL = 500Ω CL = 0.1μF Fig. 31 - Turn-on Time Document Number: 67754 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS SiP32460/SiP32462 SiP32462 VEN (1V/div) VEN (500mV/div) VOUT (1V/div) VOUT (500mV/div) IOUT (20mA/div) IOUT (10mA/div) VIN = 3.3V RL = 500Ω CL = 0.1μF Time (4μs/div) VIN = 1.2V RL = 500Ω CL = 0.1μF Time (100μs/div) Fig. 35 - Turn-off Time Fig. 32 - Turn-on Time SiP32462 VEN (500mV/div) SiP32460/SiP32462 VEN (2V/div) VOUT (2V/div) VOUT (500mV/div) IOUT (20mA/div) IOUT (10mA/div) VIN = 5.0V RL = 500Ω CL = 0.1μF Time (4μs/div) VIN = 1.8V RL = 500Ω CL = 0.1μF Time (40μs/div) Fig. 36 - Turn-off Time Fig. 33 - Turn-on Time SiP32461 SiP32460/SiP32462 VEN (1V/div) VEN (500mV/div) VOUT (500mV/div) VOUT (1V/div) IOUT (10mA/div) IOUT (10mA/div) Time (100μs/div) Fig. 34 - Turn-off Time S14-0842-Rev. D, 28-Apr-14 VIN = 3.3V RL = 500Ω CL = 0.1μF Time (100μs/div) VIN = 1.2V RL = 500Ω CL = 0.1μF Fig. 37 - Turn-off Time Document Number: 67754 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS SiP32460/SiP32462 SiP32461 VEN (500mV/div) VEN (2V/div) VOUT (500mV/div) VOUT (2V/div) IOUT (10mA/div) IOUT (20mA/div) VIN = 5.0V RL = 500Ω CL = 0.1μF Time (100μs/div) VIN = 1.8V RL = 500Ω CL = 0.1μF Time (20μs/div) Fig. 41 - Turn-off Time Fig. 38 - Turn-off Time SiP32461 SiP32460/SiP32462 VEN (2V/div) VEN (2V/div) VOUT (2V/div) VOUT (2V/div) IOUT (20mA/div) VIN = 5.5V RL = 500Ω CL = 0.1μF Time (100μs/div) IOUT (20mA/div) VIN = 3.3V RL = 500Ω CL = 0.1μF Time (20μs/div) Fig. 42 - Turn-off Time Fig. 39 - Turn-off Time SiP32461 VEN (2V/div) SiP32461 VEN (2V/div) VOUT (2V/div) IOUT (20mA/div) Time (20μs/div) Fig. 40 - Turn-off Time S14-0842-Rev. D, 28-Apr-14 VIN = 5.0V RL = 500Ω CL = 0.1μF VOUT (2V/div) IOUT (20mA/div) Time (20μs/div) VIN = 5.5V RL = 500Ω CL = 0.1μF Fig. 43 - Turn-off Time Document Number: 67754 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32460, SiP32461, SiP32462 www.vishay.com DETAILED DESCRIPTION SiP32460, SiP32461, and SiP32462 are high side, slew rate controlled, load switches. They incorporate a negative charge pump at the gate to keep the gate to source voltage high when turned on. This keeps the on resistance low at lower input voltages. SiP32460 and SiP32461 are designed with slow slew rate to minimize inrush current during turn on. These devices have a reverse blocking circuit, when disabled, to prevent the current from going back to the input when the output voltage is higher than the input voltage. The SiP32460 and SiP32462 can be used as bi-directional switches and can be turned ON and OFF when power is at either IN or OUT. The SiP32461 has an output pull down resistor to discharge the output capacitance when the device is off. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 4.7 μF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 μF capacitor across VOUT and GND is recommended to insure proper slew operation. There is inrush current through the output MOSFET and the magnitude of the inrush current depends on the output capacitor, the bigger the COUT the higher the inrush current. There is no ESR or capacitor type requirement. Enable The EN pin is compatible with CMOS logic voltage levels. It requires at least 0.4 V or below to fully shut down the device and 1 V or above to fully turn on the device. There is a 2.6 MΩ resistor connected between EN pin and GND pin. Protection Against Reverse Voltage Condition This device contains a reverse blocking circuit. When disabled (VEN less than 0.4 V) this circuit keeps the output current from flowing back to the input when the output voltage is higher than the input voltage. Vishay Siliconix characteristic for the safe operating load current is the thermal power dissipation of the package. The maximum power dissipation in any application is dependent on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance, θJ-A = 205 °C/W, and the ambient temperature, TA, which may be expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 205 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 268 mW. So long as the load current is below the 1.2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C is 120 mΩ at VIN = 1.5 V. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 2800 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 120 mΩ x (1 + 0.0028 x (70 °C - 25 °C)) = 135 mΩ The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in this case is 1.99 A. Under the stated input voltage condition, if the 1.99 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 1.2 A only as listed in the Absolute Maximum Ratings table. Thermal Considerations Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A as stated in the Absolute Maximum Ratings table. However, another limiting Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67754 S14-0842-Rev. D, 28-Apr-14 Document Number: 67754 12 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps (2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size) Mark on backside of die 1 A 2 1 2 W A B A B B e D 4 x Ø 0.15 to Ø 0.20 Solder mask dia. - Pad diameter + 0.1 0.4 e 4xØb D Pin 1 mark A 0.4 Note 3 A1 Recommended Land Pattern All dimensions in millimeters Bump Note 2 DWG-No: 6004 Notes (1) Laser mark on the backside surface of die (2) Bumps are SAC396 (3) 0.05 max. coplanarity DIM. A MILLIMETERS a NOM. MAX. MIN. 0.515 0.530 0.545 0.0202 A1 b 0.208 0.250 e D INCHES MIN. 0.260 0.760 MAX. 0.0208 0.0214 0.0081 0.270 0.0098 0.800 0.0182 0.400 0.720 NOM. 0.0102 0.0106 0.0157 0.0193 0.0203 Note a. Use millimeters as the primary measurement. S14-0844-Rev. C, 28-Apr-14 1 Document Number: 63459 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000