SEMiX205GD12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
281
A
Tc = 80 °C
214
A
200
A
ICnom
ICRM
SEMiX® 5
VGES
tpsc
Trench IGBT Modules
Tj
SEMiX205GD12E4
IF
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
• Solderless assembly solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and robust
internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Typical Applications*
• Three phase inverters for AC motor
speed control
• UPS
Remarks
• Product reliability results are valid for
Tjop=150°C
A
V
10
µs
-40 ... 175
°C
Inverse diode
VRRM
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
224
A
Tc = 80 °C
167
A
200
A
IFnom
Features
600
-20 ... 20
IFRM
IFRM = 3xIFnom
600
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
990
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
300
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 200 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.05
2.30
V
Tj = 25 °C
0.87
1.01
V
Tj = 150 °C
0.77
0.90
V
Tj = 25 °C
4.7
5.2
mΩ
Tj = 150 °C
6.4
7.0
mΩ
5.8
6.3
V
0.87
2.6
mA
VGE(th)
VGE=VCE, IC = 7.4 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 25 °C
Tj = 150 °C
f = 1 MHz
-
nF
nF
2087
nC
3.5
Ω
Tj = 25 °C
VCC = 600 V
IC = 200 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
di/dton = 4500 A/µs
di/dtoff = 1353 A/µs
td(off)
tf
Eoff
nF
0.68
VGE = - 15 V...+ 15 V
Eon
mA
f = 1 MHz
RGint
td(on)
12.5
f = 1 MHz
QG
tr
5.3
Tj = 150 °C
145
ns
Tj = 150 °C
43
ns
Tj = 150 °C
14
mJ
Tj = 150 °C
457
ns
Tj = 150 °C
82
ns
Tj = 150 °C
22.8
mJ
Rth(j-c)
per IGBT
Rth(c-s)
per IGBT (λgrease=0,81 W/mK,
thickness 50-100µm)
0.18
0.055
K/W
K/W
GD
© by SEMIKRON
Rev. 2.0 – 02.03.2016
1
SEMiX205GD12E4
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMiX® 5
Trench IGBT Modules
SEMiX205GD12E4
IRRM
Qrr
Err
Rth(j-c)
Rth(c-s)
chiplevel
min.
Tj = 25 °C
Tj = 150 °C
typ.
max.
Unit
2.20
2.52
V
2.15
2.47
V
Tj = 25 °C
1.1
1.30
1.50
V
Tj = 150 °C
0.7
0.90
1.10
V
Tj = 25 °C
4.0
4.5
5.1
mΩ
6.3
6.9
mΩ
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 4500 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
5.3
250
A
37
µC
16
mJ
0.27
per diode (λgrease=0,81 W/mK,
thickness 50-100µm)
0.065
K/W
K/W
Module
LCE
Features
• Solderless assembly solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and robust
internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
TC = 25 °C
RCC'+EE'
measured per
switch
Rth(c-s)1
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
to heat sink (M5)
Rth(c-s)2
Ms
TC = 125 °C
to terminals (M6)
Mt
20
nH
1.2
mΩ
1.65
mΩ
0.005
K/W
0.0081
K/W
3
6
Nm
3
6
Nm
Nm
w
398
g
493 ± 5%
Ω
3550
±2%
K
Temperature Sensor
Typical Applications*
R100
• Three phase inverters for AC motor
speed control
• UPS
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
Remarks
• Product reliability results are valid for
Tjop=150°C
GD
2
Rev. 2.0 – 02.03.2016
© by SEMIKRON
SEMiX205GD12E4
Fig. 1: Typ. output characteristic
Fig. 2: Rated current vs. Temperature Ic=f(Tc)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2.0 – 02.03.2016
3
SEMiX205GD12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact.
Fig. 11: Typ. CAL diode peak reverse recovery current
4
Rev. 2.0 – 02.03.2016
© by SEMIKRON
SEMiX205GD12E4
SEMiX 5p
GD
© by SEMIKRON
Rev. 2.0 – 02.03.2016
5
SEMiX205GD12E4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
6
Rev. 2.0 – 02.03.2016
© by SEMIKRON