datasheet

SEMiX653GD176HDc
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 150 °C
1700
V
Tc = 25 °C
619
A
Tc = 80 °C
438
A
450
A
ICnom
ICRM
SEMiX® 33c
Trench IGBT Modules
ICRM = 2xICnom
900
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tc = 25 °C
545
A
Tc = 80 °C
365
A
450
A
VGES
tpsc
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
Tj
Inverse diode
IF
SEMiX653GD176HDc
Tj = 150 °C
IFnom
Features
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2900
A
-40 ... 150
°C
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Module
Typical Applications*
Visol
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Tj
It(RMS)
Tstg
Symbol
AC sinus 50Hz, t = 1 min
Conditions
min.
600
A
-40 ... 125
°C
4000
V
typ.
max.
Unit
Tj = 25 °C
2
2.45
V
Tj = 125 °C
2.45
2.9
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
2.2
2.8
mΩ
3.4
4.0
mΩ
5.8
6.4
V
3
mA
IGBT
VCE(sat)
IC = 450 A
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
Tj = 125 °C
VGE(th)
VGE=VCE, IC = 18 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 1200 V
IC = 450 A
td(on)
tr
Eon
RG on = 3.6 Ω
RG off = 3.6 Ω
5.2
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
39.6
nF
f = 1 MHz
1.65
nF
f = 1 MHz
Tj = 125 °C
1.31
nF
4200
nC
1.67
Ω
290
ns
Tj = 125 °C
90
ns
Tj = 125 °C
300
mJ
Tj = 125 °C
975
ns
tf
Tj = 125 °C
190
ns
Eoff
Tj = 125 °C
180
mJ
td(off)
Rth(j-c)
per IGBT
0.054
K/W
GD
© by SEMIKRON
Rev. 1 – 24.06.2010
1
SEMiX653GD176HDc
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 450 A
VGE = 0 V
chip
VF0
rF
SEMiX® 33c
IRRM
Qrr
Trench IGBT Modules
Err
Rth(j-c)
SEMiX653GD176HDc
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Tj = 25 °C
Tj = 125 °C
typ.
max.
Unit
1.7
1.90
V
1.7
1.9
V
Tj = 25 °C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
Tj = 25 °C
1.3
1.3
1.3
mΩ
1.8
1.8
mΩ
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 4200 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 1200 V
per diode
1.8
380
A
130
µC
73
mJ
0.11
K/W
Module
LCE
RCC'+EE'
Features
min.
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.014
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
900
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GD
2
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX653GD176HDc
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 24.06.2010
3
SEMiX653GD176HDc
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX653GD176HDc
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 1 – 24.06.2010
5