SEMIKRON SEMIX453GB176HDS

SEMiX453GB176HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 150 °C
1700
V
Tc = 25 °C
444
A
Tc = 80 °C
315
A
300
A
ICnom
ICRM
SEMiX® 3s
Trench IGBT Modules
ICRM = 2xICnom
600
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tc = 25 °C
545
A
Tc = 80 °C
365
A
300
A
VGES
tpsc
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
Tj
Inverse diode
IF
SEMiX453GB176HDs
Tj = 150 °C
IFnom
Features
IFRM
IFRM = 2xIFnom
600
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2900
A
-40 ... 150
°C
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Module
Typical Applications*
Visol
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Tj
It(RMS)
Tstg
Symbol
AC sinus 50Hz, t = 1 min
Conditions
min.
600
A
-40 ... 125
°C
4000
V
typ.
max.
Unit
Tj = 25 °C
2
2.45
V
Tj = 125 °C
2.45
2.9
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
3.3
4.2
mΩ
IGBT
VCE(sat)
IC = 300 A
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
Tj = 125 °C
VGE(th)
VGE=VCE, IC = 12 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
VCC = 1200 V
IC = 300 A
RG on = 4.3 Ω
RG off = 4.3 Ω
Eoff
Rth(j-c)
Tj = 25 °C
5.2
5.2
6.0
mΩ
5.8
6.4
V
0.1
0.3
mA
Tj = 125 °C
mA
f = 1 MHz
26.4
nF
f = 1 MHz
1.10
nF
f = 1 MHz
Tj = 125 °C
0.88
nF
2799
nC
2.50
Ω
335
ns
Tj = 125 °C
70
ns
Tj = 125 °C
215
mJ
Tj = 125 °C
990
ns
Tj = 125 °C
150
ns
Tj = 125 °C
125
per IGBT
mJ
0.071
K/W
GB
© by SEMIKRON
Rev. 15 – 16.12.2009
1
SEMiX453GB176HDs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 300 A
VGE = 0 V
chip
VF0
rF
SEMiX® 3s
IRRM
Qrr
Trench IGBT Modules
Err
Rth(j-c)
SEMiX453GB176HDs
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Tj = 25 °C
Tj = 125 °C
typ.
max.
Unit
1.5
1.70
V
1.4
1.6
V
Tj = 25 °C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
Tj = 25 °C
1.3
1.3
1.3
mΩ
1.8
1.8
mΩ
Tj = 125 °C
IF = 300 A
Tj = 125 °C
di/dtoff = 4700 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 1200 V
per diode
1.8
350
A
115
µC
65
mJ
0.11
K/W
Module
LCE
RCC'+EE'
Features
min.
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.04
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
300
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 15 – 16.12.2009
© by SEMIKRON
SEMiX453GB176HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 15 – 16.12.2009
3
SEMiX453GB176HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 15 – 16.12.2009
© by SEMIKRON
SEMiX453GB176HDs
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 15 – 16.12.2009
5
SEMiX453GB176HDs
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
6
Rev. 15 – 16.12.2009
© by SEMIKRON