AOT482L/AOB482L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT482L/AOB482L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 80V 105A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.2mΩ RDS(ON) (at VGS = 7V) < 9mΩ 100% UIS Tested 100% Rg Tested TO-263 TO220 Top View Bottom View Top View D D2PAK D Bottom View D D D G G D S S D G G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C Units V V 82 A 330 11 IDSM TA=70°C S S 105 IDM TA=25°C G Maximum 80 ±25 ID TC=100°C S A 9 Avalanche Current C IAS, IAR 82 A Avalanche energy L=0.1mH C EAS, EAR 336 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Pev 0: May 2010 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 167 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD -55 to 175 Typ 11 47 0.36 www.aosmd.com °C Max 15 60 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOT482L/AOB482L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V VDS=80V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 330 100 TJ=125°C VGS=7V, ID=20A TO220 VGS=10V, ID=20A TO263 VGS=7V, ID=20A TO263 VDS=5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge µA 50 VGS=10V, ID=20A IS V TJ=55°C Static Drain-Source On-Resistance Units 10 Zero Gate Voltage Drain Current TO220 Max 80 IDSS RDS(ON) Typ VGS=10V, VDS=40V, ID=20A 3.1 nA 3.7 V A 5.9 7.2 11 13 6.8 9 mΩ 5.6 6.9 mΩ 6.5 50 8.7 mΩ S 0.64 mΩ 1 V 105 A 3240 4054 4870 pF 320 458 600 pF 95 160 225 pF 0.2 0.45 0.7 Ω 53 66.8 81 nC 16 20.8 25 nC 12 20.2 30 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 26 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 75 108 140 VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 26 ns 18 ns 48 ns 21 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: May 2010 www.aosmd.com Page 2 of 7 AOT482L/AOB482L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 7V 6V 80 80 60 5.5V ID(A) ID (A) 60 40 40 125°C 20 20 VGS=5V 25°C 0 0 0 1 2 3 4 3 5 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 6 7 Normalized On-Resistance 2.4 10 RDS(ON) (mΩ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VGS=7V 8 6 VGS=10V 4 2.2 VGS=10V ID=20A 2 1.8 17 5 2 10 VGS=7V 1.6 1.4 1.2 ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 1.0E+02 16 ID=20A 1.0E+01 40 125°C 12 10 25°C 8 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 14 25°C 1.0E-01 1.0E-02 6 1.0E-03 4 1.0E-04 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: May 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT482L/AOB482L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=40V ID=20A 5000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 4000 3000 2000 Coss 2 1000 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 RDS(ON) limited 10µs 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 80 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 3000 2000 1000 1 10 VDS (Volts) 100 1000 0 1E-05 0.0001 0.001 0.01 0.1 0 1 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics 4000 100µs 10.0 10 20 10µs Power (W) ID (Amps) 100.0 10 5000 1000.0 ZθJC Normalized Transient Thermal Resistance Crss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.45°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: May 2010 www.aosmd.com Page 4 of 7 AOT482L/AOB482L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 250 200 150 100 50 1 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 175 1000 120 TA=25°C 100 80 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 60 40 100 17 5 2 10 10 20 0 0 25 50 75 100 125 150 175 ZθJA Normalized Transient Thermal Resistance 1 1 100 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) 10 1 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: May 2010 www.aosmd.com Page 5 of 7 AOT482L/AOB482L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 di/dt=800A/µs 125ºC 35 120 25ºC 25 20 125ºC 80 40 0 0 5 10 15 20 25 0.5 125º 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 250 5 10 15 20 50 50 2.5 25ºC 100 125ºC Qrr 40 30 30 20 125ºC 10 trr 20 0 600 1 25ºC 800 0 1000 S 10 25ºC 400 1.5 25ºC 50 Irm 2 trr (ns) 150 40 Irm (A) Qrr (nC) 125ºC 0.5 125ºC 0 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0: May 2010 30 Is=20A 200 200 25 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current Is=20A 0 1 S 5 5 0 1.5 25ºC 10 10 25ºC 2 25ºC 15 15 Irm 2.5 125ºC trr 20 trr (ns) 30 Qrr di/dt=800A/µs 25 Irm (A) Qrr (nC) 30 40 160 3 S 200 35 45 S 240 www.aosmd.com 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOT482L/AOB482L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: May 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7