UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 50mΩ @VGS = 4.5V * RDS(ON) < 63mΩ @VGS = 2.5V * RDS(ON) < 87mΩ @VGS = 1.8V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Note: UT3414G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-248.F UT3414 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID 4.2 A Pulsed Drain Current IDM 15 A Power Dissipation PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA MIN TYP 100 MAX 125 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=16V, VGS=0V VDS=0V, VGS=±8V 20 VGS(TH) ID(ON) VDS=VGS, ID=250µA VDS=5V, VGS=4.5V VGS=4.5V, ID=4.2A VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A 0.4 15 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=10V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn ON Delay Time tD(ON) Turn ON Rise Time tR VDS=10V, VGS=5V, RL=2.7Ω RG=6Ω Turn OFF Delay Time tD(OFF) Turn OFF Fall-Time tF Total Gate Charge QG Gate Source Charge QGS VDS=10V, ID=4.2A, VGS=4.5V Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=1A Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF=4A, dI/dt=100A/μs Body Diode Reverse Recovery QRR IF=4A, dI/dt=100A/μs Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 100 V µA nA 0.6 1 41 52 67 50 63 87 V A mΩ 436 66 44 pF pF pF 5.5 6.3 40 12.7 6.2 1.6 0.5 ns ns ns ns nC nC nC 0.76 1 V 2 A 12.3 ns 3.5 nC 2 of 4 QW-R502-248.F UT3414 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms 1200 1000 VDS 800 90% 600 400 VGS 10% tD(ON) 200 tD(OFF) tTHL tTLH 0 400 600 200 800 Source to Drain Voltage,VSD (mV) Drain Current, ID (A) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-248.F UT3414 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-248.F