AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary The AOT286L/AOB286L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID (at VGS=10V) 80V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) conduction and switching power losses are minimized RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested AOB286L AOT286L TO-263 TO220 Top View Top View Bottom View D Bottom View D D D D G G D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A A IAS 50 A EAS 125 mJ 167 W 83 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 13 PDSM TA=70°C ±20 10.5 PD TC=100°C Units V 245 IDSM TA=70°C Maximum 80 55 IDM TA=25°C Continuous Drain Current S 70 ID TC=100°C S G G -55 to 175 Typ 12 48 0.7 °C Max 15 60 0.9 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.2 0: May 2013 www.aosmd.com Page 1 of 6 AOT286L/AOB286L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 245 ±100 nA 2.7 3.3 V 5.0 6.0 8.1 9.8 6.1 7.9 mΩ VGS=10V, ID=20A TO263 4.7 5.7 mΩ VGS=6V, ID=20A TO263 5.8 7.6 mΩ VGS=10V, ID=20A TO220 VGS=6V, ID=20A TO220 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=10V, VDS=40V, ID=20A Gate Source Charge 0.6 mΩ S 1 V 70 A 3142 pF 435 pF 43 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 80 VDS=80V, VGS=0V VGS(th) RDS(ON) Typ pF 1.3 2.0 Ω 44.5 63 nC 12 nC Qgd Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 13.5 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime 32 ns tf Turn-Off Fall Time 11 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 161 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: May 2013 www.aosmd.com Page 2 of 6 AOT286L/AOB286L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 5V 80 80 6V 60 ID(A) ID (A) 60 4.5V 40 40 20 20 125°C Vgs=4V 25°C 0 0 0 1 2 3 4 1 5 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 2.2 8 VGS=6V RDS(ON) (mΩ Ω) 2 6 4 VGS=10V 2 2 VGS=10V ID=20A 1.8 1.6 1.4 VGS=6V ID=20A 1.2 17 5 2 10 1 0.8 0 0 10 20 30 40 50 60 0 70 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 1.0E+00 9 IS (A) RDS(ON) (mΩ Ω) 125°C 125°C 1.0E-01 1.0E-02 6 1.0E-03 25°C 25°C 3 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: May 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT286L/AOB286L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=40V ID=20A 3500 8 Capacitance (pF) VGS (Volts) 3000 6 4 Ciss 2500 2000 1500 Coss 1000 2 500 0 Crss 0 0 10 20 30 40 50 0 60 80 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) limited 10.0 DC 1.0 600 100µs 1ms 10ms Power (W) ID (Amps) 40 800 1000.0 100.0 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 1 17 5 2 10 400 200 10 100 0 0.0001 1000 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=0.9°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: May 2013 www.aosmd.com Page 4 of 6 AOT286L/AOB286L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C 100 TA=100°C TA=150°C 150 120 90 60 30 TA=125°C 10 0 1 10 100 1000 0 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 1000 80 60 100 Power (W) Current rating ID(A) TA=25°C 40 17 5 2 10 10 20 0 0 25 50 75 100 125 150 1 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note F) 0.01 0.1 1 10 0100 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 100 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 1 0.1 0.01 PD 0.001 Single Pulse Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: May 2013 www.aosmd.com Page 5 of 6 AOT286L/AOB286L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.2.0: May 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6