FZ12 / F0122PA075SC preliminary datasheet flowPHASE0 1200V/75A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 4 Target Applications Schematic ● Motor Drive ● UPS Types ● FZ122PA075SC ● F0122PA075SC Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 59 75 A 225 A 126 191 W ±20 V 10 800 μs V 175 °C 1200 V 55 74 A 150 A 85 128 W 175 °C Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj≤150°C VGE=15V Tjmax Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Copyright by Vincotech Tjmax 1 Th=80°C Tc=80°C Th=80°C Tc=80°C Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage Copyright by Vincotech Vis t=2s DC voltage 2 Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,5 1,94 2,38 2,3 Inverter Transistor VCE=VGE Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time 0,003 75 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 0,03 700 Rgoff=4 Ω Rgon=4 Ω 600 ±15 75 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω 10 tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 178 196 34 36 284 373 63 124 6,17 9,39 4,01 6,99 ns mWs 4400 f=1MHz 25 0 Tj=25°C pF 290 235 Tj=25°C ±15 290 Thermal grease thickness≤50um λ = 1 W/mK nC 0,75 K/W Inverter Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Rgon=4 Ω 600 ±15 di(rec)max /dt Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Copyright by Vincotech 75 Thermal grease thickness≤50um λ = 1 W/mK 75 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1 1,78 1,72 69,44 86,2 275,1 457 6,62 14,08 1859 724 2,29 5,22 2,3 V A ns μC A/μs mWs 1,12 K/W 3 Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter IGBT Figure 1 Typical output characteristics IC = f(VCE) Output inverter IGBT Figure 2 Typical output characteristics IC = f(VCE) IC (A) 250 IC (A) 250 200 200 150 150 100 100 50 50 0 0 0 At tp = Tj = VGE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = VGE from 350 μs 25 °C 7 V to 17 V in steps of 1 V Output inverter IGBT Figure 3 Typical transfer characteristics IC = f(VGE) 1 2 3 4 5 350 μs 150 °C 7 V to 17 V in steps of 1 V Output inverter FRED Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 250 IC (A) IF (A) 75 V CE (V) Tj = 25°C 60 200 45 150 30 100 Tj = Tjmax-25°C Tj = Tjmax-25°C Tj = 25°C 15 50 0 0 0 2 4 At tp = VCE = 350 10 μs V Copyright by Vincotech 6 8 10 V GE (V) 12 0 At tp = 4 0,6 350 1,2 1,8 2,4 3 V F (V) 3,6 μs Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter IGBT Figure 5 Typical switching energy losses as a function of collector current E = f(IC) Output inverter IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 25 E (mWs) E (mWs) 25 Eon High T 20 20 15 15 Eon High T Eon Low T Eon Low T Eoff High T 10 10 Eoff Low T Eoff High T 5 5 Eoff Low T 0 0 0 25 50 75 100 125 I C (A) 0 150 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V Rgon = 4 Ω Rgoff = 4 Ω 4 8 12 16 RG(Ω) 20 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V IC = 75 A Output inverter IGBT Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(IC) Output inverter IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) 8 E (mWs) 8 E (mWs) Erec 6 6 Tj = Tjmax -25°C Tj = Tjmax -25°C Erec 4 4 Tj = 25°C Erec Tj = 25°C 2 Erec 2 0 0 0 25 50 75 100 125 I C (A) 150 0 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V Rgon = 4 Ω Copyright by Vincotech 4 8 12 16 RG(Ω) 20 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V IC = 75 A 5 Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter IGBT Figure 9 Typical switching times as a function of collector current t = f(IC) Output inverter IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) t ( μs) 1 t ( μs) 1 tdoff tdoff tdon tdon tf 0,1 tf 0,1 tr tr 0,01 0,01 0,001 0,001 0 25 50 75 100 125 I C (A) 150 0 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V Rgon = 4 Ω Rgoff = 4 Ω 4 8 12 16 RG(Ω ) 20 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V IC = 75 A Output inverter FRED Figure 11 Typical reverse recovery time as a function of collector current trr = f(IC) Output inverter FRED Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) 0,7 t rr( μs) t rr( μs) 0,7 0,6 0,6 trr trr Tj = Tjmax -25°C 0,5 0,5 Tj = Tjmax -25°C 0,4 0,4 trr trr 0,3 0,3 Tj = 25°C 0,2 0,2 Tj = 25°C 0,1 0,1 0 0 0 25 At Tj = VCE = VGE = Rgon = 25/150 600 ±15 4 50 75 100 125 I C (A) 0 150 At Tj = VR = IF = VGE = °C V V Ω Copyright by Vincotech 6 4 25/150 600 75 ±15 8 12 16 R g on ( Ω ) 20 °C V A V Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter FRED Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(IC) Output inverter FRED Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) 25 Qrr( μC) Qrr( μC) 20 Qrr 20 16 Tj = Tjmax -25°C Qrr Tj = Tjmax -25°C 15 12 10 Tj = 25°C 8 Qrr Qrr 5 4 Tj = 25°C 0 0 At 0 At Tj = VCE = VGE = Rgon = 25 50 25/150 600 ±15 4 75 100 125 I C (A) 150 0 4 At Tj = VR = IF = VGE = °C V V Ω Output inverter FRED Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(IC) 8 25/150 600 75 ±15 12 16 R g on ( Ω) 20 °C V A V Output inverter FRED Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) 120 IrrM (A) IrrM (A) 150 120 Tj = Tjmax - 25°C 90 IRRM 90 Tj = Tjmax -25°C IRRM IRRM 60 Tj = 25°C 60 IRRM Tj = 25°C 30 30 0 0 0 25 At Tj = VCE = VGE = Rgon = 25/150 600 ±15 4 50 75 100 125 I C (A) 0 150 At Tj = VR = IF = VGE = °C V V Ω Copyright by Vincotech 7 4 25/150 600 75 ±15 8 12 16 R gon ( Ω ) 20 °C V A V Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter FRED Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(IC) 4000 4000 direc / dt (A/ μs) dI0/dt direc / dt (A/μ s) Output inverter FRED Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Rgon) dIo/dtLow T dIrec/dt 3200 dI0/dt dIrec/dt 3200 Tj = 25°C di0/dtHigh T Tj = Tjmax - 25°C 2400 2400 dIrec/dtLow T 1600 1600 dIrec/dtHigh T 800 800 0 0 dIrec/dtHigh T 0 At Tj = VCE = VGE = Rgon = 25 25/150 600 ±15 4 50 75 100 125 I C (A) 150 0 At Tj = VR = IF = VGE = °C V V Ω Output inverter IGBT Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 4 25/150 600 75 ±15 8 12 20 °C V A V Output inverter FRED Figure 20 FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) 101 ZthJH (K/W) Zth-JH (K/W) 101 R gon ( Ω ) 16 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 -2 10 10-2 10-5 At D= RthJH = 10-4 10-3 10-2 10-1 100 t p (s) 10-5 1011 At D= RthJH = tp / T 0,75 K/W 10-4 10-3 1,12 R (C/W) 0,05 0,17 0,39 0,11 0,02 0,02 R (C/W) 0,03 0,17 0,57 0,24 0,07 0,04 8 100 t p (s) 1011 K/W FRED thermal model values Copyright by Vincotech 10-1 tp / T IGBT thermal model values Tau (s) 4,2E+00 7,6E-01 1,7E-01 2,2E-02 2,2E-03 2,9E-04 10-2 Tau (s) 9,3E+00 1,1E+00 1,8E-01 3,1E-02 5,5E-03 4,0E-04 Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter IGBT Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) Output inverter IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 100 IC (A) Ptot (W) 240 200 80 160 60 120 40 80 20 40 0 0 0 At Tj = 50 175 100 °C 150 T h ( o C) 0 200 At Tj = VGE = single heating overall heating Output inverter FRED Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 50 175 15 100 T h ( o C) 200 °C V Output inverter FRED Figure 24 Forward current as a function of heatsink temperature IF = f(Th) 90 IF (A) Ptot (W) 180 150 150 75 120 60 90 45 60 30 30 15 0 0 0 At Tj = 50 175 100 °C Copyright by Vincotech 150 T h ( o C) 200 0 At Tj = single heating overall heating 9 50 175 100 150 T h ( o C) 200 °C Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Output Inverter Output inverter IGBT Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) Output inverter IGBT Figure 26 Gate voltage vs Gate charge VGE = f(QGE) 103 IC (A) VGE (V) 16 14 100uS 240V 10uS 102 12 960V 1mS DC 100mS 10 10mS 8 101 6 4 100 2 0 10-1 0 10 At D= Th = VGE = Tj = 1 10 10 2 103 0 80 120 160 200 240 280 320 360 400 Q g (nC) At IC = single pulse 80 ºC ±15 V Tjmax ºC Copyright by Vincotech 40 V CE (V) 10 75 A Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Switching Definitions Output Inverter General conditions = 150 °C Tj = 4Ω Rgon Rgoff = 4Ω Output inverter IGBT Figure 1 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 140 250 % % IC tdoff 120 Output inverter IGBT Figure 2 Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) VCE 200 100 VGE 90% VCE 90% 150 80 IC VCE 60 100 tEoff VGE 40 tdon 50 20 VGE IC10% VGE10% 0 0 IC 1% -20 -0,2 -0,05 0,1 0,25 0,4 0,55 tEon 0,7 -50 0,85 2,8 time (us) VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = -15 15 600 75 0,37 0,78 2,95 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = V V V A μs μs Output inverter IGBT Figure 3 VCE 3% 3,1 3,25 -15 15 600 75 0,20 0,55 V V V A μs μs 3,4 3,7 time(us) Output inverter IGBT Figure 4 Turn-off Switching Waveforms & definition of tf 3,55 Turn-on Switching Waveforms & definition of tr 140 250 % fitted % Ic 120 IC VCE 200 100 IC 90% 150 80 VCE IC 60% 60 100 IC90% tr IC 40% 40 50 20 IC10% 0 -20 0,25 0,3 0,35 0,4 0,45 0,5 -50 0,55 3 time (us) VC (100%) = IC (100%) = tf = 600 75 0,12 Copyright by Vincotech IC10% 0 tf 3,1 3,2 3,3 3,4 3,5 time(us) VC (100%) = IC (100%) = tr = V A μs 11 600 75 0,04 V A μs Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Switching Definitions Output Inverter Output inverter IGBT Figure 5 Output inverter IGBT Figure 6 Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon 120 220 % Poff % Eoff Pon 100 170 80 120 60 40 Eon 70 20 VGE 10% 20 VGE 90% 0 VCE 3% tEon tEoff IC 1% -30 -20 -0,2 0 0,2 0,4 0,6 0,8 2,9 1 3,05 3,2 3,35 3,5 Poff (100%) = Eoff (100%) = tEoff = 44,97 7,03 0,78 Pon (100%) = Eon (100%) = tEon = kW mJ μs Output inverter FRED Figure 7 Gate voltage vs Gate charge (measured) 3,65 time(us) time (us) 44,97 9,36 0,55 kW mJ μs Output inverter IGBT Figure 8 Turn-off Switching Waveforms & definition of trr 20 VGE (V) 120 % 15 fitted Id 80 trr 10 40 5 0 Vd 0 IRRM10% -40 -5 -80 -10 IRRM90% IRRM100% -120 -15 -160 -20 -50 0 50 100 150 200 250 300 350 400 3 450 3,2 3,4 3,6 Qg (nC) VGEoff = VGEon = VC (100%) = IC (100%) = Qg = -15 15 600 75 6601,20 Copyright by Vincotech 3,8 4 time(us) Vd (100%) = Id (100%) = IRRM (100%) = trr = V V V A nC 12 600 75 -85 0,46 V A A μs Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Switching Definitions Output Inverter Output inverter FRED Figure 9 Output inverter FRED Figure 10 Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 120 150 % Erec % Qrr 100 100 Id 80 50 tQrr tErec 60 0 40 -50 20 Prec -100 0 -20 -150 3 3,3 3,6 3,9 4,2 3 4,5 3,3 3,6 3,9 time(us) Id (100%) = Qrr (100%) = tQrr = 75 13,41 0,92 Copyright by Vincotech Prec (100%) = Erec (100%) = tErec = A μC μs 13 44,97 4,88 0,92 4,2 4,5 time(us) kW mJ μs Revision: 1 FZ12 / F0122PA075SC preliminary datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code without thermal paste 12mm housing without thermal paste 17mm housing 10-FZ122PA075SC-P998F08 10-F0122PA075SC-P998F09 in DataMatrix as P998F08 P998F09 in packaging barcode as P998F08 P998F09 Outline Pinout Copyright by Vincotech 14 Revision: 1 FZ12 / F0122PA075SC preliminary datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright by Vincotech 15 Revision: 1