FZ12 / F0122PA150SC preliminary datasheet flowPHASE0 1200V/150A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 4 Target Applications Schematic ● Motor Drive ● UPS Types ● FZ122PA150SC ● F0122PA150SC Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 92 119 A 450 A 172 260 W ±20 V 10 800 μs V 175 °C 1200 V 75 101 A 300 A 106 160 W Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj≤150°C VGE=15V Tjmax Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Thermal Properties Copyright by Vincotech 1 Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage Copyright by Vincotech Vis t=2s DC voltage 2 Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,4 1,98 2,43 2,4 Inverter Transistor Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time VCE=VGE 0,006 150 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 0,05 700 Rgoff=2 Ω Rgon=2 Ω ±15 600 150 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω 5 tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 185 204 28,2 37,2 305 387 79 116 8,89 14,15 9,11 14,92 ns mWs 9300 f=1MHz 0 580 Tj=25°C 25 pF 510 960 ±15 150 579 Tj=25°C Thermal grease thickness≤50um λ = 1 W/mK nC 0,553 K/W Inverter Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Rgon=2 Ω ±15 600 di(rec)max /dt Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Copyright by Vincotech 150 Thermal grease thickness≤50um λ = 1 W/mK 150 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1 1,91 1,91 183,3 209,5 127 298 13,9 26,6 3265 2538 5,21 10,45 2,4 V A ns μC A/μs mWs 0,90 K/W 3 Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter IGBT Figure 1 Typical output characteristics IC = f(VCE) Output inverter IGBT Figure 2 Typical output characteristics IC = f(VCE) IC (A) 450 IC (A) 450 375 375 300 300 225 225 150 150 75 75 0 0 0 At tp = Tj = VGE from 1 2 3 V CE (V) 4 5 0 At tp = Tj = VGE from 350 μs 25 °C 7 V to 17 V in steps of 1 V Output inverter IGBT Figure 3 Typical transfer characteristics IC = f(VGE) 1 2 3 V CE (V) 5 350 μs 150 °C 7 V to 17 V in steps of 1 V Output inverter FRED Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 150 4 IC (A) IF (A) 450 Tj = 25°C 375 120 Tj = Tjmax-25°C 300 90 225 60 Tj = Tjmax-25°C 150 30 75 Tj = 25°C 0 0 0 At tp = VCE = 2 350 10 4 6 8 10 V GE (V) 12 0 At tp = μs V Copyright by Vincotech 4 0,8 350 1,6 2,4 3,2 V F (V) 4 μs Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter IGBT Figure 5 Typical switching energy losses as a function of collector current E = f(IC) Output inverter IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 30 E (mWs) E (mWs) 30 Eon High T 25 25 Eon High T Eoff High T 20 20 Eon Low T Eoff Low T 15 Eoff High T 10 10 Eoff Low T 5 5 15 Eon Low T 0 0 0 50 100 150 200 250 I C (A) 0 300 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V Rgon = 2 Ω Rgoff = 2 Ω 2 4 6 8 RG( Ω ) 10 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V IC = 150 A Output inverter IGBT Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(IC) 15 15 E (mWs) Erec E (mWs) Output inverter IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) 12 12 Erec Tj = Tjmax -25°C 9 Tj = Tjmax -25°C 9 Tj = 25°C Erec 6 6 Tj = 25°C Erec 3 3 0 0 0 50 100 150 200 250 I C (A) 300 0 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V Rgon = 2 Ω Copyright by Vincotech 2 4 6 8 RG( Ω ) 10 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V IC = 150 A 5 Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter IGBT Figure 9 Typical switching times as a function of collector current t = f(IC) Output inverter IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) t ( μs) 1 t ( μs) 1 tdoff tdoff tdon tdon tf 0,1 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 50 100 150 200 250 I C (A) 300 0 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V Rgon = 2 Ω Rgoff = 2 Ω 2 4 6 8 RG( Ω ) 10 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V IC = 150 A Output inverter FRED Figure 11 Typical reverse recovery time as a function of collector current trr = f(IC) Output inverter FRED Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) 0,5 t rr( μs) t rr( μs) 0,5 0,4 trr 0,4 Tj = Tjmax -25°C Tj = Tjmax -25°C trr 0,3 0,3 0,2 0,2 Tj = 25°C Tj = 25°C trr trr 0,1 0,1 0 0 0 50 At Tj = VCE = VGE = Rgon = 25/150 600 ±15 2 100 150 200 250 I C (A) 0 300 At Tj = VR = IF = VGE = °C V V Ω Copyright by Vincotech 6 2 25/150 600 150 ±15 4 6 8 R g on ( Ω ) 10 °C V A V Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter FRED Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(IC) Output inverter FRED Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) 40 Qrr( μC) 40 Qrr( μC) Qrr 32 32 Qrr Tj = Tjmax -25°C Tj = Tjmax -25°C 24 24 Qrr 16 16 Qrr Tj = 25°C Tj = 25°C 8 8 0 0 At 0 At Tj = VCE = VGE = Rgon = 50 100 25/150 600 ±15 2 150 200 250 I C (A) 300 0 2 At Tj = VR = IF = VGE = °C V V Ω Output inverter FRED Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(IC) 4 25/150 600 150 ±15 6 8 R g on ( Ω) 10 °C V A V Output inverter FRED Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) 300 IrrM (A) IrrM (A) 300 IRRM 250 250 IRRM Tj = Tjmax -25°C Tj = Tjmax - 25°C 200 200 150 150 IRRM Tj = 25°C IRRM Tj = 25°C 100 100 50 50 0 0 0 50 At Tj = VCE = VGE = Rgon = 25/150 600 ±15 2 100 150 200 250 I C (A) 0 300 At Tj = VR = IF = VGE = °C V V Ω Copyright by Vincotech 7 2 25/150 600 150 ±15 4 6 8 R gon ( Ω ) 10 °C V A V Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter FRED Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(IC) 10000 direc / dt (A/ μs) 10000 direc / dt (A/μ s) Output inverter FRED Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Rgon) dI0/dt dIrec/dt 8000 dIo/dtLow T 6000 dI0/dt dIrec/dt 8000 6000 Tj = 25°C di0/dtHigh T dIrec/dtLow T 4000 4000 2000 2000 Tj = Tjmax - 25°C dIrec/dtHigh T dIrec/dtHigh T 0 0 0 At Tj = VCE = VGE = Rgon = 50 25/150 600 ±15 2 100 150 200 250 I C (A) 300 0 At Tj = VR = IF = VGE = °C V V Ω Output inverter IGBT Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 2 25/150 600 150 ±15 4 6 10 °C V A V Output inverter FRED Figure 20 FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) 100 ZthJH (K/W) Zth-JH (K/W) 100 R gon ( Ω ) 8 -1 -1 10 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -2 10 10-2 10-5 At D= RthJH = 10-4 10-3 10-2 10-1 100 t p (s) 10-5 1011 At D= RthJH = tp / T 0,55 K/W 10-4 10-3 0,90 R (C/W) 0,04 0,13 0,31 0,06 0,01 0,01 R (C/W) 0,03 0,16 0,50 0,14 0,04 0,03 8 100 t p (s) 1011 K/W FRED thermal model values Copyright by Vincotech 10-1 tp / T IGBT thermal model values Tau (s) 5,0E+00 9,8E-01 2,3E-01 3,1E-02 4,1E-03 3,6E-04 10-2 Tau (s) 9,4E+00 1,1E+00 1,9E-01 3,8E-02 6,6E-03 4,3E-04 Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter IGBT Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) Output inverter IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 150 IC (A) Ptot (W) 400 320 120 240 90 160 60 80 30 0 0 0 At Tj = 50 175 100 150 T h ( o C) 200 0 At Tj = VGE = °C Output inverter FRED Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 50 175 15 100 T h ( o C) 200 °C V Output inverter FRED Figure 24 Forward current as a function of heatsink temperature IF = f(Th) 200 150 Ptot (W) IF (A) 120 100 160 80 120 60 80 40 40 20 0 0 0 At Tj = 50 175 100 150 T h ( o C) 200 0 At Tj = °C Copyright by Vincotech 9 50 175 100 150 T h ( o C) 200 °C Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Output Inverter Output inverter IGBT Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) Output inverter IGBT Figure 26 Gate voltage vs Gate charge VGE = f(QGE) 103 VGE (V) IC (A) 16 10uS 14 100uS 2 10 240V 12 960V DC 10mS 100mS 1mS 10 101 8 0 10 6 4 10-1 2 0 0 10 At D= Th = VGE = Tj = 101 102 103 0 100 150 200 250 300 350 400 450 500 550 600 650 700 750 Q g (nC) At IC = single pulse 80 ºC ±15 V Tjmax ºC Copyright by Vincotech 50 V CE (V) 10 150 A Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Switching Definitions Output Inverter General conditions = 150 °C Tj = 2Ω Rgon Rgoff = 2Ω Output inverter IGBT Figure 1 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 140 250 % % 120 tdoff Output inverter IGBT Figure 2 Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) VCE IC 210 100 VGE 90% VCE 90% 170 80 60 130 IC VCE tEoff 40 90 VGE tdon 20 50 0 IC 1% VGE -40 -0,2 0 0,2 0,4 0,6 0,8 -15 15 600 150 0,39 0,78 2,8 2,95 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = V V V A μs μs Output inverter IGBT Figure 3 VCE 3% tEon -30 1 time (us) VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = IC10% VGE10% 10 -20 3,1 3,25 -15 15 600 150 0,20 0,52 V V V A μs μs 3,4 3,7 time(us) Output inverter IGBT Figure 4 Turn-off Switching Waveforms & definition of tf 3,55 Turn-on Switching Waveforms & definition of tr 140 250 % fitted % 120 IC 210 VCE 100 170 IC 90% 80 130 VCE IC 60% 60 IC90% 90 IC 40% 40 tr 50 20 IC10% 0 Ic tf -20 0,25 0,3 0,35 0,4 0,45 0,5 -30 2,95 0,55 time (us) VC (100%) = IC (100%) = tf = 600 150 0,12 Copyright by Vincotech IC10% 10 3,1 3,25 3,4 3,55 3,7 time(us) VC (100%) = IC (100%) = tr = V A μs 11 600 150 0,04 V A μs Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Switching Definitions Output Inverter Output inverter IGBT Figure 5 Output inverter IGBT Figure 6 Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon 120 180 % Poff 100 Pon % Eoff 150 80 120 60 90 40 60 20 30 Eon VGE 10% VCE 3% VGE 90% 0 0 tEon tEoff IC 1% -20 -0,2 -30 -0,05 0,1 0,25 0,4 0,55 0,7 2,9 0,85 3 3,1 3,2 3,3 3,4 3,5 3,6 Poff (100%) = Eoff (100%) = tEoff = 90,25 14,92 0,78 Pon (100%) = Eon (100%) = tEon = kW mJ μs Output inverter FRED Figure 7 Gate voltage vs Gate charge (measured) 3,7 time(us) time (us) 90,25 14,15 0,52 kW mJ μs Output inverter IGBT Figure 8 Turn-off Switching Waveforms & definition of trr 20 VGE (V) 120 % 15 Id 80 trr 10 40 5 0 Vd 0 IRRM10% -40 -5 -80 -10 IRRM90% -120 -15 fitted -20 -250 IRRM100% -160 0 250 500 750 3,1 1000 3,25 3,4 3,55 Qg (nC) VGEoff = VGEon = VC (100%) = IC (100%) = Qg = -15 15 600 150 8359,90 Copyright by Vincotech Vd (100%) = Id (100%) = IRRM (100%) = trr = V V V A nC 12 600 150 -210 0,30 3,7 time(us) 3,85 V A A μs Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Switching Definitions Output Inverter Output inverter FRED Figure 9 Output inverter FRED Figure 10 Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 120 150 % Erec % Qrr 100 100 Id 80 50 tQrr tErec 60 0 40 -50 20 Prec -100 0 -20 -150 3 3,2 3,4 3,6 3,8 4 4,2 3 4,4 3,2 3,4 3,6 3,8 time(us) Id (100%) = Qrr (100%) = tQrr = 150 26,55 0,88 Copyright by Vincotech Prec (100%) = Erec (100%) = tErec = A μC μs 13 90,25 10,45 0,88 4 4,2 4,4 time(us) kW mJ μs Revision: 1 FZ12 / F0122PA150SC preliminary datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code in DataMatrix as in packaging barcode as without thermal paste 12mm housing without thermal paste 17mm housing 10-FZ122PA150SC-P990F08 10-F0122PA150SC-P990F09 P990F08 P990F09 P990F08 P990F09 Outline Pinout Copyright by Vincotech 14 Revision: 1 FZ12 / F0122PA150SC preliminary datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright by Vincotech 15 Revision: 1