V23990-K229-A41-PM MiniSKiiP® 2 PIM 1200V / 25A MiniSKiiP® 2 housing Features ● Solderless interconnection ● Trench Fieldstop IGBT4 technology ● Enhanced input rectifier Target Applications Schematic ● Industrial Drives Types ● V23990-K229-A41-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 40 A 450 A 1020 A2s 52 W Tjmax 150 °C VCE 1200 V 30 A 75 A 89 W ±20 V 10 800 µs V 175 °C D8,D9,D10,D11,D12,D13 Repetitive peak reverse voltage VRRM DC forward current IFAV Surge forward current IFSM I2t-value I2t Power dissipation per Diode Ptot Maximum Junction Temperature Tj=Tjmax Th=80°C tp=10ms Tj=150°C Tj=Tjmax Th=80°C T1,T2,T3,T4,T5,T6,T7 Collector-emitter break down voltage DC collector current Repetitive peak collector current IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Copyright by Vincotech Tj=Tjmax Th=80°C tp limited by Tjmax Tj=Tjmax Tj≤150°C VGE=15V Tjmax 1 Th=80°C Revision: 4.1 V23990-K229-A41-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 25 A 160 A 62 W Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12.7 mm Clearance min 12.7 mm D1,D2,D3,D4,D5,D6,D7 Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=Tjmax Th=80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Thermal Properties Insulation Properties Insulation voltage Copyright by Vincotech Vis t=2s DC voltage 2 Revision: 4.1 V23990-K229-A41-PM Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0,8 1,2 1,12 0,85 0,73 14 15 1,35 D8,D9,D10,D11,D12,D13 Forward voltage VF Threshold voltage (for power loss calc. only) Vto Slope resistance (for power loss calc. only) rt Reverse current Ir Thermal resistance chip to heatsink per chip 25 1500 RthJH Thermal grease thickness≤50µm λ=1W/mK VGE(th) VCE=VGE V V m۷ 0,1 1,1 mA K/W 0,90 T1,T2,T3,T4,T5,T6,T7 Gate emitter threshold voltage Collector-emitter saturation voltage VCE(sat) 0,00085 25 15 Collector-emitter cut-off current incl. diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time Rise time Turn-off delay time Fall time tr tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Rgoff=32۷ Rgon=32۷ Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Vcc=960V RthJH Thermal grease thickness≤50µm λ=1W/mK Thermal resistance chip to heatsink per chip 5 5,8 6,5 1,35 1,88 2,2 2,15 0,05 300 600 ±15 25 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA ۷ - td(on) td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 112 113 29,3 34,7 231 303 91 137 1,87 2,77 1,49 2,43 ns mWs 1430 f=1MHz 25 0 Tj=25°C 115 pF 85 40 15 Tj=25°C 120 nC 1,2 K/W D1,D2,D3,D4,D5,D6,D7 Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current VF IRRM trr Qrr Rgon=32۷ 600 ±15 di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH Copyright by Vincotech 25 Thermal grease thickness≤50µm λ=1W/mK 25 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,5 2,47 2,49 13,5 18,3 319 544 1,48 3,69 174 64 0,52 1,44 1,52 3 2,75 V A ns µC A/µs mWs K/W Revision: 4.1 V23990-K229-A41-PM Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Typ Unit Max Thermistor Rated resistance R Deviation of R100 ∆R/R R100 T=25°C R100=1670 ۷ T=100°C P T=100°C Power dissipation constant ۷ 1000 -3 3 % ۷ 1670,313 mW/K T=25°C A-value B(25/50) Tol. % T=25°C 7,635*10-3 1/K B-value B(25/100) Tol. % T=25°C 1,731*10-5 1/K² Vincotech NTC Reference Copyright by Vincotech E 4 Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 T1,T2,T3,T4,T5,T6,T7 IGBT Figure 1 Typical output characteristics IC = f(VCE) T1,T2,T3,T4,T5,T6,T7 IGBT Figure 2 Typical output characteristics IC = f(VCE) 75 IC (A) IC (A) 75 60 60 45 45 30 30 15 15 0 0 0 1 At tp = Tj = VGE from 2 3 V CE (V) 4 5 0 At tp = Tj = VGE from 250 µs 25 °C 7 V to 17 V in steps of 1 V T1,T2,T3,T4,T5,T6,T7 IGBT Figure 3 Typical transfer characteristics IC = f(VGE) 1 2 4 V CE (V) 5 250 µs 150 °C 7 V to 17 V in steps of 1 V Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) D1,D2,D3,D4,D5,D6,D7 FWD 75 IC (A) IF (A) 25 3 20 60 15 45 Tj = 25°C Tj = Tjmax-25°C Tj = Tjmax-25°C 10 30 Tj = 25°C 5 15 0 0 0 2 4 At tp = VCE = 250 10 µs V Copyright by Vincotech 6 8 10 V GE (V) 12 0 At tp = 5 1 250 2 3 4 V F (V) 5 µs Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 T1,T2,T3,T4,T5,T6,T7 IGBT Figure 5 Typical switching energy losses as a function of collector current E = f(IC) T1,T2,T3,T4,T5,T6,T7 IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 8 E (mWs) E (mWs) 8 Eon High T Eon High T 6 6 Eon Low T Eon Low T 4 4 Eoff High T Eoff High T Eoff Low T 2 2 Eoff Low T 0 0 0 10 20 30 40 I C (A) 0 50 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V Rgon = 32 ۷ Rgoff = 32 ۷ 30 60 90 120 RG( Ω ) 150 With an inductive load at Tj = °C 25/150 VCE = 600 V VGE = ±15 V IC = 25 A Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(IC) T1,T2,T3,T4,T5,T6,T7 IGBT T1,T2,T3,T4,T5,T6,T7 IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) E (mWs) 2 E (mWs) 2 Erec Tj = Tjmax -25°C 1,6 1,6 1,2 1,2 Tj = Tjmax -25°C 0,8 Erec 0,8 Erec Tj = 25°C Tj = 25°C Erec 0,4 0,4 0 0 0 10 20 30 40 I C (A) 50 0 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V Rgon = 32 ۷ Copyright by Vincotech 30 60 90 120 RG( Ω ) 150 With an inductive load at Tj = 25/150 °C VCE = 600 V VGE = ±15 V IC = 25 A 6 Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 T1,T2,T3,T4,T5,T6,T7 IGBT Figure 9 Typical switching times as a function of collector current t = f(IC) T1,T2,T3,T4,T5,T6,T7 IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) t ( µs) 1 t ( µs) 1 tdoff tdoff tdon tf 0,1 tf 0,1 tdon tr tr 0,01 0,01 0,001 0,001 0 10 20 30 40 I C (A) 50 0 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V Rgon = 32 ۷ Rgoff = 32 ۷ 30 60 90 120 RG( Ω ) 150 With an inductive load at Tj = 150 °C VCE = 600 V VGE = ±15 V IC = 25 A Figure 11 Typical reverse recovery time as a function of collector current trr = f(IC) D1,D2,D3,D4,D5,D6,D7 FWD Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) 1 t rr( µs) t rr( µs) 1 D1,D2,D3,D4,D5,D6,D7 FWD 0,8 trr 0,8 trr Tj = Tjmax -25°C Tj = Tjmax -25°C 0,6 0,6 trr trr Tj = 25°C 0,4 0,4 Tj = 25°C 0,2 0,2 0 0 0 10 At Tj = VCE = VGE = Rgon = 25/150 600 ±15 32 20 30 40 I C (A) 50 °C V V ۷ Copyright by Vincotech 7 0 30 At Tj = VR = IF = VGE = 25/150 600 25 ±15 60 90 120 R g on ( Ω ) 150 °C V A V Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(IC) D1,D2,D3,D4,D5,D6,D7 FWD Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) 5 D1,D2,D3,D4,D5,D6,D7 FWD 5 Qrr( µC) Qrr( µC) Qrr Tj = Tjmax -25°C 4 4 Tj = Tjmax -25°C Qrr 3 3 Qrr 2 2 Tj = 25°C Tj = 25°C Qrr 1 1 0 0 At 0 At Tj = VCE = VGE = Rgon = 10 25/150 600 ±15 32 20 30 40 I C (A) 50 0 30 At Tj = VR = IF = VGE = °C V V ۷ Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(IC) D1,D2,D3,D4,D5,D6,D7 FWD 25/150 600 25 ±15 60 90 120 R g on ( Ω) 150 °C V A V Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) D1,D2,D3,D4,D5,D6,D7 FWD 50 IrrM (A) IrrM (A) 25 40 20 Tj = Tjmax -25°C IRRM 30 15 Tj = 25°C IRRM 20 10 Tj = Tjmax - 25°C 10 5 Tj = 25°C IRRM 0 0 0 10 At Tj = VCE = VGE = Rgon = 25/150 600 ±15 32 20 30 40 I C (A) 50 °C V V ۷ Copyright by Vincotech 8 0 30 At Tj = VR = IF = VGE = 25/150 600 25 ±15 60 90 120 R gon ( Ω ) 150 °C V A V Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 D1,D2,D3,D4,D5,D6,D7 FWD Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(IC) Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Rgon) 3500 direc / dt (A/ µs) direc / dt (A/µ s) 1000 D1,D2,D3,D4,D5,D6,D7 FWD dI0/dt dIrec/dt 800 dIo/dtLow T 600 dI0/dt dIrec/dt 2800 2100 di0/dtHigh T 400 1400 200 Tj = 25°C 700 dIrec/dtLow T dIrec/dtHigh T Tj = Tjmax - 25°C dIrec/dtHigh T 0 0 0 At Tj = VCE = VGE = Rgon = 10 25/150 600 ±15 32 20 30 I C (A) 40 50 0 At Tj = VR = IF = VGE = °C V V ۷ T1,T2,T3,T4,T5,T6,T7 IGBT Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 25/150 600 25 ±15 60 90 R gon ( Ω ) 120 150 °C V A V D1,D2,D3,D4,D5,D6,D7 FWD Figure 20 FWD transient thermal impedance as a function of pulse width ZthJH = f(tp) Zth-JH (K/W) 101 ZthJH (K/W) 101 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 30 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10-2 -2 10-5 At D= RthJH = 10-4 10-3 10-2 10-1 100 t p (s) 10-5 10110 At D= RthJH = tp / T 1,2 K/W 10-4 10-3 R (C/W) 0,03 0,13 0,45 0,24 0,15 0,06 R (C/W) 0,03 0,22 0,63 0,37 0,17 0,10 9 100 t p (s) 10110 K/W FWD thermal model values Copyright by Vincotech 10-1 tp / T 1,52 IGBT thermal model values Tau (s) 5,7E+00 8,1E-01 1,6E-01 4,9E-02 1,0E-02 9,8E-04 10-2 Tau (s) 9,3E+00 7,6E-01 1,5E-01 3,0E-02 4,4E-03 6,5E-04 Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 T1,T2,T3,T4,T5,T6,T7 IGBT Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) T1,T2,T3,T4,T5,T6,T7 IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 40 IC (A) Ptot (W) 180 150 30 120 90 20 60 10 30 0 0 0 At Tj = 50 100 150 T h ( o C) 200 0 At Tj = VGE = °C 175 D1,D2,D3,D4,D5,D6,D7 FWD Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 50 175 15 100 T h ( o C) 200 °C V D1,D2,D3,D4,D5,D6,D7 FWD Figure 24 Forward current as a function of heatsink temperature IF = f(Th) 40 Ptot (W) IF (A) 120 150 100 30 80 60 20 40 10 20 0 0 0 At Tj = 50 175 100 150 T h ( o C) 200 0 At Tj = °C Copyright by Vincotech 10 50 175 100 150 T h ( o C) 200 °C Revision: 4.1 V23990-K229-A41-PM T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7 T1,T2,T3,T4,T5,T6,T7 IGBT Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) T1,T2,T3,T4,T5,T6,T7 IGBT Figure 26 Gate voltage vs Gate charge VGE = f(QGE) 103 IC (A) VGE (V) 16 14 10 240V 2 960V 12 10uS 100uS 1mS 10 1 100mS DC 10 8 10mS 6 10 4 0 2 0 10-1 0 10 At D= Th = VGE = Tj = 10 1 10 2 V CE (V) 0 103 40 60 80 100 120 Q g (nC) At IC = single pulse 80 ºC ±15 V Tjmax ºC Copyright by Vincotech 20 11 25 A Revision: 4.1 V23990-K229-A41-PM D8,D9,D10,D11,D12,D13 Figure 1 Typical diode forward current as a function of forward voltage IF= f(VF) D8,D9,D10,D11,D12,D13 Diode Figure 2 Diode transient thermal impedance as a function of pulse width ZthJH = f(tp) 75 1 IF (A) ZthJC (K/W) 10 D8,D9,D10,D11,D12,D13 Diode 60 100 45 30 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 Tj = 25°C 10 Tj = Tjmax-25°C -1 15 0 0 0,4 0,8 1,2 1,6 V F (V) 10-2 2 10-5 At tp = At D= RthJH = µs 250 D8,D9,D10,D11,D12,D13 Diode 10-3 10-2 100 t p (s) 10110 tp / T 0,90 K/W Figure 4 Forward current as a function of heatsink temperature IF = f(Th) 200 10-1 D8,D9,D10,D11,D12,D13 Diode 50 IF (A) Ptot (W) Figure 3 Power dissipation as a function of heatsink temperature Ptot = f(Th) 10-4 160 40 120 30 80 20 40 10 0 0 0 At Tj = 30 150 60 90 120 T h ( o C) 150 0 At Tj = ºC Copyright by Vincotech 12 30 150 60 90 120 T h ( o C) 150 ºC Revision: 4.1 V23990-K229-A41-PM Thermistor Thermistor Figure 1 Typical PTC characteristic as a function of temperature RT = f(T) PTC-typical temperature characteristic R/Ω 2000 1800 1600 1400 1200 1000 25 50 Copyright by Vincotech 75 100 T (°C) 125 13 Revision: 4.1 V23990-K229-A41-PM Switching Definitions Output Inverter General conditions Tj = 150 °C Rgon = 32 Ω Rgoff = 32 Ω Output inverter IGBT Figure 1 Output inverter IGBT Figure 2 Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 210 130 % % tdoff 110 VGE 90% 90 IC 180 VCE VCE 90% 150 70 120 VCE IC 50 90 tEoff VGE tdon 30 60 IC 1% 10 30 -30 -0,2 -0,05 0,1 0,25 0,4 0,55 -15 15 600 25 0,30 0,68 VCE 3% tEon 0 0,7 -30 0,85 5,9 time (us) VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = IC10% VGE10% VGE -10 6 6,1 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = V V V A µs µs Output inverter IGBT Figure 3 6,2 -15 15 600 25 0,11 0,42 6,3 6,4 6,6 6,7 time(us) V V V A µs µs Output inverter IGBT Figure 4 Turn-off Switching Waveforms & definition of tf 6,5 Turn-on Switching Waveforms & definition of tr 140 210 % % 120 180 VCE Ic 100 150 IC IC 90% 80 120 IC 60% 60 IC90% 90 IC 40% 40 VCE tr 60 20 30 IC10% IC10% tf 0 0 fitted -20 0,2 0,25 0,3 0,35 0,4 0,45 0,5 -30 0,55 5,9 time (us) VC (100%) = IC (100%) = tf = 600 25 0,14 Copyright by Vincotech 6 6,1 6,2 6,3 6,4 6,5 6,6 6,7 time(us) VC (100%) = IC (100%) = tr = V A µs 14 600 25 0,03 V A µs Revision: 4.1 V23990-K229-A41-PM Switching Definitions Output Inverter Output inverter IGBT Figure 5 Output inverter IGBT Figure 6 Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon 120 180 % Poff 100 Pon % Eoff 140 80 Eon 100 60 40 60 20 VGE 10% 20 0 VCE 3% tEoff tEon VGE 90% -20 -0,2 IC 1% 0 0,2 Poff (100%) = Eoff (100%) = tEoff = 0,4 14,95 2,43 0,68 0,6 0,8 time (us) -20 5,85 1 6 6,15 6,3 6,45 6,6 6,75 time(us) Pon (100%) = Eon (100%) = tEon = kW mJ µs 14,95 2,77 0,42 kW mJ µs Output inverter IGBT Figure 7 Turn-off Switching Waveforms & definition of trr 120 % Id 80 trr 40 Vd 0 IRRM10% -40 IRRM90% IRRM100% -80 fitted -120 6 Vd (100%) = Id (100%) = IRRM (100%) = trr = 6,2 6,4 600 25 18 0,54 Copyright by Vincotech 6,6 6,8 time(us) 7 V A A µs 15 Revision: 4.1 V23990-K229-A41-PM Switching Definitions Output Inverter Output inverter FWD Figure 8 Output inverter FWD Figure 9 Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 120 Erec % % Qrr 100 100 Id 80 50 tErec 60 tQrr 40 0 20 Prec -50 0 -100 -20 6 Id (100%) = Qrr (100%) = tQrr = 6,2 6,4 6,6 25 3,69 0,90 A µC µs Copyright by Vincotech 6,8 7 time(us) 7,2 6 Prec (100%) = Erec (100%) = tErec = 16 6,2 6,4 6,6 14,95 1,44 0,90 kW mJ µs 6,8 7 time(us) 7,2 Revision: 4.1 V23990-K229-A41-PM Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version with std lid (black V23990-K22-T-PM) with std lid (black V23990-K22-T-PM) and P12 with thin lid (white V23990-K23-T-PM) with thin lid (white V23990-K23-T-PM) and P12 Ordering Code in DataMatrix as V23990-K229-A41-/0A/-PM V23990-K229-A41-/1A/-PM V23990-K229-A41-/0B/-PM V23990-K229-A41-/1B/-PM K229A41 K229A41 K229A41 K229A41 in packaging barcode as K229A41-/0A/ K229A41-/1A/ K229A41-/0B/ K229A41-/1B/ Outline Pinout Copyright by Vincotech 17 Revision: 4.1 V23990-K229-A41-PM DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright by Vincotech 18 Revision: 4.1