10-PY07N3A050SM- M896F04Y target datasheet flow 3xNPC 1 650 V / 50 A Features flow 1 housing ● Neutral-point-Clamped inverter ● ● ● ● Ultra fast switching Low Inductance layout Very compact design IGBT H5 and IGBT L5 technology Schematic Target Applications ● Solar inverters ● UPS ● SMPS Types ● 10-PY07N3A050SM- M896F04Y Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 75 A 225 A 77 W BOOST IGBT Collector-emitter break down voltage DC collector current V CE IC Tj=Tjmax Th=80°C Pulsed collector current I CRM tp limited by Tjmax Power dissipation P tot Tj=Tjmax Gate-emitter peak voltage V GE ±20 V Maximum Junction Temperature T jmax 175 °C V RRM 650 V 20 A 40 A 34 W 175 °C Th=80°C BOOST IGBT Inverse Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current I FRM Tvj<150°C Power dissipation P tot Tj=Tjmax Maximum Junction Temperature T jmax copyright Vincotech 1 Th=80°C Th=80°C 21 Nov. 2014 / Revision 1 10-PY07N3A050SM- M896F04Y target datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 35 A 150 A 90 A 63 W Buck IGBT Collector-emitter break down voltage DC collector current Pulsed collector current V CE IC I CRM Turn off safe operation area Tj=Tjmax Th=80°C tp limited by Tjmax VCE≤650V; TVj≤175°C Tj=Tjmax Th=80°C Power dissipation P tot Gate-emitter peak voltage V GE ±20 V Maximum Junction Temperature T jmax 175 °C V RRM 650 V 29 A 120 A 52 W Buck Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Th=80°C tp limited by Tjmax Repetitive peak forward current I FRM Power dissipation P tot Maximum Junction Temperature T jmax 175 °C V RRM 650 V 20 A 40 A 34 W 60Hz single half-sine wave Tj=Tjmax Th=80°C BOOST Diode Peak Repetitive Reverse Voltage IF Tj=Tjmax Repetitive peak forward current I FRM Tvj<150°C BOOST Diode P tot Tj=Tjmax Maximum Junction Temperature T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+Tjmax - 25 °C 4000 VDC Creepage distance min 12,7 mm Clearance min 12,7 mm DC forward current Th=80°C Th=80°C Thermal Properties Insulation Properties Insulation voltage copyright Vincotech V is t=2s 2 21 Nov. 2014 / Revision 1 10-PY07N3A050SM- M896F04Y target datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Unit Tj Min Typ Max Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 4,2 5 5,8 1,05 1,45 BOOST IGBT Gate emitter threshold voltage Collector-emitter saturation voltage V GE(th) 0,001 VCE=VGE V CEsat 15 75 Collector-emitter cut-off current incl. Diode I CES 0 650 Gate-emitter leakage current I GES 20 0 Integrated Gate resistor R gint Turn-on delay time t d(on) Rise time Turn-off delay time tr t d(off) E on Turn-off energy loss E off Input capacitance C ies 300 75 Reverse transfer capacitance C rss Gate charge QG R th(j-s) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V mA nA Ω tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd ns mWs 11625 f=1MHz Thermal resistance chip to heatsink ±15 tf Turn-on energy loss 100 none Rgon=X Ω Fall time 0,04 V 0 pF Tj=25°C 25 30 Vcc=480 V 15 75 Tj=25°C Thermal grease thickness≤50um λ = 1 W/mK tbd nC 1,20 K/W BOOST Diode Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current Reverse recovered energy Thermal resistance chip to heatsink VF 20 I RRM t rr Q rr Rgon=X Ω 300 ±15 15 ( di rf/dt )max E rec R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK V GE(th) VCE=VGE Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,23 1,55 1,87 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd V A ns nC A/µs mWs 2,81 K/W Buck IGBT Gate emitter threshold voltage Collector-emitter saturation voltage V CEsat Collector-emitter cut-off incl diode I CES Gate-emitter leakage current I GES Integrated Gate resistor R gint Turn-on delay time Rise time Turn-off delay time Fall time 15 0 650 20 0 t d(off) tf Turn-off energy loss E off Input capacitance C ies Reverse transfer capacitance C rss Gate charge QG Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 3,3 4 4,7 1 1,82 2 2,22 0,04 120 none tr E on Rgon=X Ω Rgoff=X Ω f=1MHz copyright Vincotech 50 t d(on) Turn-on energy loss Thermal resistance chip to heatsink 0,0005 ±15 300 0 50 520 R th(j-s) 3 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd mA nA Ω ns ns ns ns mWs mWs 3000 pF 11 pF 120 nC 1,5 K/W Tj=25°C 25 ±15 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V V 50 Tj=25°C 21 Nov. 2014 / Revision 1 10-PY07N3A050SM- M896F04Y target datasheet Characteristic Values Parameter Conditions Symbol Value V r [V] or I C [A] or V GE [V] or V CE [V] or I F [A] or V GS [V] V DS [V] I D [A] Tj Min Unit Typ Max 2,46 2,03 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd 2,6 Buck Diode Diode forward voltage Peak reverse recovery current VF I RRM Reverse recovery time t rr Reverse recovered charge Q rr Peak rate of fall of recovery current Reverse recovery energy Thermal resistance chip to heatsink 30 Rgon=X Ω ±15 300 15 ( di rf/dt )max E rec R th(j-s) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Thermal grease thickness≤50um λ =1 W/mK V A ns nC A/µs mWs 1,80 K/W Boost IGBT Inverse Diode Diode forward voltage Thermal resistance chip to heatsink VF 10 Tj=25°C Tj=125°C 1,23 R th(j-s) 1,55 1,87 V 2,81 K/W 21511 Ω Thermistor Rated resistance Tj=25°C R Deviation of R100 Δ R/R Power dissipation P R100=1486 Ω T=100°C Power dissipation constant -4,5 +4,5 Tj=25°C 210 mW T=25°C 3,5 mW/K K B-value B (25/50) T=25°C 3884 B-value B (25/100) T=25°C 3964 Vincotech NTC Reference copyright Vincotech % K F 4 21 Nov. 2014 / Revision 1 10-PY07N3A050SM- M896F04Y target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Standard in flow1 12mm housing Ordering Code in DataMatrix as 10-PY07N3A050SM- M896F04Y M896F04Y in packaging barcode as M896F04Y Outline Pinout copyright Vincotech 5 21 Nov. 2014 / Revision 1 10-PY07N3A050SM- M896F04Y target datasheet DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 6 21 Nov. 2014 / Revision 1