VS-ST173C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 330 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • International standard case TO-200AB (A-PUK) • Guaranteed high dI/dt • High surge current capability • Low thermal impedance TO-200AB (A-PUK) • High speed performance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-200AB (A-PUK) Diode variation Single SCR IT(AV) 330 A VDRM/VRRM 1000 V, 1200 V VTM 2.07 V ITSM at 50 Hz 4680 A ITSM at 60 Hz 4900 A IGT 200 mA TC/Ths 55 °C TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 610 A 25 °C 4680 60 Hz 4900 50 Hz 110 60 Hz 100 Range TJ UNITS 330 50 Hz VDRM/VRRM tq VALUES A kA2s 1000 to 1200 V 15 to 30 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST173C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 1000 1100 12 1200 1300 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 Revision: 16-Dec-13 Document Number: 94366 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180° el 100 µs 180° el 50 Hz 760 660 1200 1030 5570 4920 400 Hz 730 590 1260 1080 2800 2460 1000 Hz 600 490 1200 1030 1620 1390 2500 Hz 350 270 850 720 800 Recovery voltage Vr Voltage before turn-on Vd 50 50 VDRM VDRM VDRM 50 Heatsink temperature 40 Equivalent values for RC circuit 55 40 47/0.22 V 55 47/0.22 A 680 50 Rise of on-state current dI/dt UNITS A/μs 40 55 °C μF 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage No voltage reapplied 100 % VRRM reapplied No voltage reapplied VALUES UNITS 330 (120) A 55 (85) °C 610 4680 4900 A 3940 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 4120 110 100 77 kA2s 71 I2t t = 0.1 to 10 ms, no voltage reapplied 1100 VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.07 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.55 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.61 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.87 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.77 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time SYMBOL TEST CONDITIONS VALUES UNITS dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/μs td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/μs VR = 50 V, tp = 500 μs, dV/dt: See table in device code minimum Maximum turn-off time maximum 1.1 15 μs 30 Revision: 16-Dec-13 Document Number: 94366 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp 5 ms 20 5 200 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION Single Side Double Side RECTANGULAR CONDUCTION Single Side Double Side 180° 0.015 0.016 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 16-Dec-13 Document Number: 94366 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com Vishay Semiconductors 130 ST173C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 Ø 90 Conduction angle 80 70 30° 60 60° 90° 50 ST173C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 110 100 90 Ø 80 Conduction period 70 60 50 60° 40 30° 30 120° 180° 40 120 80 40 160 200 240 0 200 100 Average On-State Current (A) 180° 300 400 500 600 700 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 1000 ST173C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 Ø 80 Conduction period 70 60 50 90° 40 30° 180° 60° 30 DC Maximum Average On-State Power Loss (W) 130 Maximum Allowable Heatsink Temperature (°C) 90° 20 0 120° 180° 120° 90° 60° 30° 900 800 700 600 RMS limit 500 400 Ø 300 Conduction angle 200 ST173C..C Series TJ = 125 °C 100 0 20 0 50 100 200 150 250 300 0 350 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 1400 130 ST173C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 110 Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (°C) DC 120° 100 90 Ø Conduction angle 80 70 30° 180° 60° 60 90° 50 120° 40 30 DC 180° 120° 90° 60° 30° 1200 1000 800 RMS limit 600 Ø Conduction period 400 ST173C..C Series TJ = 125 °C 200 0 0 50 100 150 200 250 300 350 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics 400 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 16-Dec-13 Document Number: 94366 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com 1 At any rated load condition and with rated VRRM applied following surge. ST173C..C Series Transient Thermal Impedance ZthJ-hs (K/W) Peak Half Sine Wave On-State Current (A) 4500 Vishay Semiconductors Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST173C..C Series 2000 1 10 0.001 0.001 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 3500 3000 2500 2000 ST173C..C Series TJ = 125 °C 200 ITM = 500 A ITM = 300 A ITM = 200 A 150 ITM = 100 A 100 50 ITM = 50 A ST173C..C Series 0 1500 0.01 0.1 0 1 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Reverse Recovered Charge Characteristics 10 000 160 ST173C..C Series ITM = 500 A 140 Irr - Maximum Reverse Recovery Current (A) Instantaneous On-State Current (A) 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Qrr - Maximum Reverse Recovery Charge (µC) Peak Half Sine Wave On-State Current (A) 4000 1 250 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 4500 0.1 Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 5000 0.01 1000 TJ = 25 °C TJ = 125 °C ITM = 300 A 120 ITM = 200 A ITM = 100 A 100 ITM = 50 A 80 60 40 ST173C..C Series TJ = 125 °C 20 0 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 Instantaneous On-State Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - On-State Voltage Drop Characteristics Fig. 12 - Reverse Recovered Current Characteristics Revision: 16-Dec-13 Document Number: 94366 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com Vishay Semiconductors 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 200 50 Hz 100 1000 400 1500 1000 2500 3000 5000 tp ST173C..C Series Sinusoidal pulse TC = 40 °C Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 400 2500 3000 5000 ST173C..C Series Sinusoidal pulse TC = 55 °C tp 100 100 500 1500 1000 50 Hz 200 1000 100 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 400 1000 2000 1500 1000 2500 3000 5000 tp 100 10 100 50 Hz 200 100 ST173C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 50 A/µs 1000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 50 Hz 1000 500 400 2000 2500 3000 1000 1500 tp 5000 100 10 000 10 100 Pulse Basewidth (µs) 200 100 ST173C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 50 A/µs 1000 10 000 Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 1500 3000 500 1000 400 200 100 50 Hz 2500 5000 100 10 000 tp 10 10 100 ST173C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 100 A/µs 1000 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 200 100 50 Hz 500 400 1000 1000 1500 3000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 2500 5000 100 10 000 tp 10 10 Pulse Basewidth (µs) 100 ST173C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 100 A/µs 1000 10 000 Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics Revision: 16-Dec-13 Document Number: 94366 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com Vishay Semiconductors 100 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 1000 0.5 1 2 3 5 10 0.3 0.2 0.1 100 ST173C..C Series Sinusoidal pulse tp ST173C..C Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 2 1000 10 3 5 1 0.5 0.3 0.2 100 0.1 tp 10 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs IGD 0.1 0.001 0.01 TJ = 40 °C VGD tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (b) TJ = 25 °C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST173C..C Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Revision: 16-Dec-13 Document Number: 94366 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 17 3 C 12 C H K 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (A-PUK) 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code 10 - 0 = Eyelet terminals (gate and aux. cathode unsoldered leads) 1 = Fast-on terminals (gate and aux. cathode unsoldered leads) 2 = Eyelet terminals dV/dt - t q combinations available dV/dt (V/µs) 15 18 t (µs) 20 q 25 30 20 CL CP CK CJ -- 50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH * Standard part number. All other types available only on request. (gate and aux. cathode soldered leads) 3 = Fast-on terminals (gate and aux. cathode soldered leads) 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 16-Dec-13 Document Number: 94366 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000