VS-ST180C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 350 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies TO-200AB (A-PUK) • AC controllers PRODUCT SUMMARY Package TO-200AB (A-PUK) Diode variation Single SCR IT(AV) 350 A VDRM/VRRM 400 V to 2000 V VTM 1.96 V IGT 150 mA TJ -40 °C to 125 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 660 A 25 °C 5000 60 Hz 5230 50 Hz 125 60 Hz 114 Typical TJ UNITS 350 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 2000 V 100 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST180C..C VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 08 800 500 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 30 Revision: 26-Nov-13 Document Number: 94396 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled 660 No voltage reapplied 100 % VRRM reapplied 4200 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 5000 t = 10 ms I2t A 55 (85) t = 10 ms t = 8.3 ms No voltage reapplied 5230 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 125 114 88 t = 0.1 to 10 ms, no voltage reapplied 1250 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.08 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.14 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.14 Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 VTM IH Maximum (typical) latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 81 VT(TO)1 Maximum holding current A 4400 Low level value of threshold voltage Maximum on-state voltage UNITS 350 (140) DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNIT S μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 26-Nov-13 Document Number: 94396 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM TEST CONDITIONS IGT TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms DC gate current not to trigger IGD DC gate voltage not to trigger VGD A 20 V 5.0 TJ = 25 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 - 90 150 40 - 2.9 - TJ = 25 °C 1.8 3.0 TJ = 125 °C 1.2 - TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNIT S W 3.0 TJ = - 40 °C VGT max. 10 TJ = 125 °C DC gate voltage required to trigger typ. TJ = TJ maximum, tp 5 ms TJ = - 40 °C DC gate current required to trigger VALUES mA V 10 mA 0.25 V VALUES UNIT S THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range SYMBOL TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) Revision: 26-Nov-13 Document Number: 94396 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors RthJC CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.015 0.015 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 ST180C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 Ø 90 Conduction angle 80 70 30° 180° 60 60° 50 90° Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 ST180C..C Series (Double side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 Ø Conduction angle 80 70 60 30° 180° 50 40 60° 30 120° 0 100 50 150 200 250 0 Average On-State Current (A) 120° 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 130 ST180C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 Ø 80 Conduction period 70 60 50 30° 40 30 60° 20 0 100 DC 90° 180° 110 100 90 80 Ø Conduction period 70 60 50 40 90° 30° 30 120° 200 ST180C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (°C) 120 Maximum Allowable Heatsink Temperature (°C) 90° 20 40 60° 180° DC 120° 20 300 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 400 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 4 - Current Ratings Characteristics Revision: 26-Nov-13 Document Number: 94396 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors 4500 1000 800 700 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) At any rated load condition and with rated VRRM applied following surge 180° 120° 90° 60° 30° 900 RMS limit 600 500 400 Ø 300 Conduction angle 200 Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 ST180C..C Series TJ = 125 °C 100 ST180C..C Series 2000 0 0 1 100 150 200 250 300 350 400 450 50 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 5000 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 DC 180° 120° 90° 60° 30° RMS limit Ø Conduction period 100 200 300 400 500 600 4000 3500 3000 2500 ST180C..C Series TJ = 125 °C 0 Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No Voltage Reapplied Rated VRRM Reapplied 4500 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 10 ST180C..C Series 2000 0.01 700 0.1 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Instantaneous On-State Current (A) 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10 000 TJ = 25 °C TJ = 125 °C 1000 ST180C..C Series 100 1 2 3 4 5 6 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics Revision: 26-Nov-13 Document Number: 94396 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors ZthJ-hs - Transient Thermal Impedance (K/W) 1 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST180C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs IGD 0.01 TJ = 40 °C VGD 0.1 0.001 (b) TJ = 25 °C 1 tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) (3) (4) Frequency limited by PG(AV) Device: ST180C..C Series 0.1 (2) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics Revision: 26-Nov-13 Document Number: 94396 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 18 0 C 20 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (A-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 26-Nov-13 Document Number: 94396 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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