VS-ST173S Series Datasheet

VS-ST173S Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 175 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
TO-209AB (TO-93)
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
PRODUCT SUMMARY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
IT(AV)
175 A
VDRM/VRRM
1000 V, 1200 V
VTM
2.07 V
TYPICAL APPLICATIONS
ITSM at 50 Hz
4680 A
• Inverters
ITSM at 60 Hz
4900 A
• Choppers
IGT
200 mA
• Induction heating
TJ
-40 °C to 125 °C
Package
TO-209AB (TO-93)
Diode variation
Single SCR
• All types of force-commutated converters


MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
175
A
85
°C
275
IT(RMS)
ITSM
I2t
50 Hz
4680
60 Hz
4900
50 Hz
110
60 Hz
100
VDRM/VRRM
1000 to 1200
tq
Range
TJ
A
kA2s
V
15 to 25
μs
-40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST173S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
10
1000
1100
12
1200
1300
40
Revision: 11-Mar-14
Document Number: 94367
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
180° el
ITM
100 µs
180° el
50 Hz
500
320
790
550
4510
3310
400 Hz
450
290
810
540
1970
1350
1000 Hz
330
190
760
490
1050
680
2500 Hz
170
80
510
300
480
Voltage before turn-on Vd
50
50
VDRM
VDRM
VDRM
Rise of on-state current dI/dt
50
Case temperature
-
60
Equivalent values for RC circuit
85
47/0.22
V
-
60
85
47/0.22
A
280
50
Recovery voltage Vr
UNITS
A/μs
60
85
°C
μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
°C
275
4680
t = 10 ms
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
4900
100 % VRRM 
reapplied
4120
No voltage
reapplied
UNITS
175
DC at 75 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
A
3940
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM 
reapplied
110
100
77
kA2s
71
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
1100
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum, 
tp = 10 ms sine wave pulse
2.07
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
1.55
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
1.58
Low level value of forward slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.87
High level value of forward slope
resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
0.82
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
dI/dt
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5  source
tq
TJ = TJ maximum, 
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
minimum
Maximum turn-off time
maximum
TEST CONDITIONS
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
VALUES
UNITS
1000
A/μs
1.1
15
μs
25
Revision: 11-Mar-14
Document Number: 94367
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM, 
higher value available on request
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate currrent required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
10
10
TJ = TJ maximum, tp  5 ms
20
5
TJ = 25 °C, VA = 12 V, Ra = 6 
TJ = TJ maximum, rated VDRM applied
W
A
V
200
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.105
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
31
(275)
Lubricated threads
24.5
(210)
Mounting torque, ± 10 %
Approximate weight
280
Case style
See dimensions - link at the end of datasheet
°C
K/W
N·m
(lbf · in)
g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
60°
0.036
0.037
30°
0.060
0.060
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94367
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
130
130
120
110
Ø
Conduction angle
100
30 °C
60 °C
90
90 °C
180 °C
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
ST173S Series
RthJC (DC) = 0.105 K/W
ST173S Series
RthJC (DC) = 0.105 K/W
120
110
Ø
100
Conduction period
90
90°
80
30°
120 °C
DC
120°
80
70
0
20
40
60
80
100 120 140 160 180
80
40
0
Average On-State Current (A)
160
120
200
240
280
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
20
40
60
80
0.3
200
R
-Δ
0
W
0
K/
50
ST173S Series
TJ = 125 °C
08
Conduction angle
0.
100
=
Ø
250
SA
150
0.
16
0.2 K/W
K/
W
W
200
R th
RMS limit
300
K/
250
1
180°
120°
90°
60°
30°
300
Maximum Average On-State
Power Loss (W)
350
0.
Maximum Average On-State
Power Loss (W)
180°
60°
K/W
0.4
K/W
0.5
K/W
0.8 K
/W
150
100
1.2 K/W
50
0
100 120 140 160 180
50
25
Average On-State Current (A)
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
500
500
90°
30°
400
180°
DC
60°
300
RMS limit
200
Ø
Conduction period
100
ST173S Series
TJ = 125 °C
0
0
40
80
120
160
200
240
Average On-State Current (A)
280
Maximum Average On-State
Power Loss (W)
Maximum Average
On-State Power Loss (W)
120°
R
400
th
0.1
SA
=
0.
8
K/
W
0.1
6
0.2 K/W
K/W
0.3
K/W
0.4 K
0.5 K /W
/W
0.8 K/W
1.2 K/W
300
200
100
K/
W
-Δ
R
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94367
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
1
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
Transient Thermal
Impedance ZthJC (K/W)
Peak Half Sine Wave
On-State Current (A)
4500
Vishay Semiconductors
3500
3000
2500
Steady state value
RthJC = 0.105 K/W
(DC operation)
0.1
0.01
ST173S Series
ST173S Series
0.001
0.001
2000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
1
10
Fig. 8 - Thermal Impedance ZthJC Characteristics
5000
4000
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
3500
3000
2500
2000
Qrr - Maximum Reverse
Recovery Charge (µC)
250
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
4500
Peak Half Sine Wave
On-State Current (A)
0.1
Square Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
A
00
=5
A
I TM
00
=3
I TM
0A
= 20
I TM
ST173S Series
TJ = 125 °C
200
150
I TM =
100 A
100
ITM = 50 A
50
ST173S Series
1500
0.01
0
0.1
1
0
Pulse Train Duration (s)
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Current Characteristics
160
10 000
ST173S Series
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
140
Irr - Maximum Reverse
Recovery Current (A)
Instantaneous On-State Current (A)
0.01
1000
TJ = 125 °C
TJ = 25 °C
120
100
80
60
40
ST173S Series
TJ = 125 °C
20
0
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
20
40
60
80
100
Instantaneous On-State Voltage (V)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 11-Mar-14
Document Number: 94367
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
200
500 400
1000
1000
100
50 Hz
1500
2000
2500
3000
ST173S Series
Sinusoidal pulse
TC = 60 °C
tp
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Vishay Semiconductors
100
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100
500 400 200
1000
1000
50 Hz
1500
2000
ST173S Series
Sinusoidal pulse
TC = 85 °C
2500
tp
3000
100
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500
1000
1000
1500
2500
50 Hz
400 200 100
2000
3000
100
5000
tp
ST173S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
Peak On-State Current (A)
Peak On-State Current (A)
10 000
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
500
50 Hz
200 100
1000
1500
2000
2500
100
400
3000
5000
ST173S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
tp
10
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
500 400
200
50 Hz
100
1000
1500
5000
100
2000
2500
10 000
tp
ST173S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
10
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
2000
100
500
1000
1500
400
200
100 50 Hz
2500
5000
10 000
tp
ST173S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 100 A/µs
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
Revision: 11-Mar-14
Document Number: 94367
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
100 000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
4
7.5
2
1
1000
0.5
0.3
0.2
0.1
100
ST173S Series
Sinusoidal pulse
tp
ST173S Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
5 10
2 3
1000
1
0.4
0.5
0.3
0.2
100
0.1
tp
10
10
10
100
1000
10
10 000
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
IGD
0.1
0.001
0.01
TJ = 40 °C
VGD
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(b)
TJ = 25 °C
1
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(a)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
Device: ST173S Series
0.1
(2)
(3) (4)
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 11-Mar-14
Document Number: 94367
7
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
ST
17
3
S
12
P
F
K
0
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = Fast turn-off
5
-
S = Compression bonding stud
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16 x 1.5
8
-
Reapplied dV/dt code (for tq test condition)
9
-
tq code
10
-
0 = Eyelet terminals
(gate and aux. cathode leads)
1 = Fast-on terminals
(gate and aux. cathode leads)
dV/dt - tq combinations available
dV/dt (V/µs)
15
18
tq (µs) 20
25
30
20
CL
CP
CK
CJ
-
50
DP
DK
DJ
DH
100
EP
EK
EJ
EH
200
FP*
FK*
FJ
FH
400
HK
HJ
HH
* Standard part number.
All other types available only on request.
2 = Flag terminals (for cathode and gate terminals)
11
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95079
Revision: 11-Mar-14
Document Number: 94367
8
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS - TO-209AB (TO-93) in millimeters (inches)
4 (0.16) MAX.
19 (0.75) MAX.
MI
N.
Ceramic housing
7)
8.5 (0.33) DIA.
86
)M
IN
.
9.5
(0.
3
4.3 (0.17) DIA.
(0.
Flexible leads
22
C.S. 25 mm2
(0.039 s.i.)
Red shrink
White shrink
Fast-on Terminals
AMP. 280000-1
REF-250
27.5 (1.08)
MAX. DIA.
27.5 (1.08)
MAX.
16 (0.63) MAX.
90 (3.54) MIN.
White gate
220 (8.66) ± 10 (0.39)
C.S. 0.4 mm2
(0.006 s.i.)
Red cathode
38.5 (1.52)
MAX.
210 (8.26) ± 10 (0.39)
Red silicon rubber
SW 32
3/4"-16UNF-2A (1)
35 (1.38)
MAX.
Note
(1) For metric device: M16 x 1.5 - length 21 (0.83) maximum
Document Number: 95079
Revision: 01-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
1
Outline Dimensions
TO-209AB (TO-93)
Vishay Semiconductors
DIMENSIONS - TO-209AB (TO-93) FLAG TERMINALS in millimeters (inches)
Ceramic housing
22 (0.89)
14 (0.55)
38.5 (1.52) MAX.
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
16 (0.63)
MAX.
27.5 (1.08) MAX.
80 (3.15) MAX.
13 (0.51)
DIA. 6.5 (0.25)
SW 32
3/4"-16UNF-2A (1)
3 (0.12)
Note
(2) For metric device: M16 x 1.5 - length 21 (0.83) maximum
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 95079
Revision: 01-Aug-07
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000