VS-ST280CH Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 500 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Extended temperature range • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls TO-200AB (A-PUK) • Controlled DC power supplies • AC controllers PRODUCT SUMMARY Package TO-200AB (A-PUK) Diode variation Single SCR IT(AV) 500 A VDRM/VRRM 400 V, 600 V VTM 1.35 V IGT 90 mA TJ -40 °C to 150 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 80 °C 1130 A 25 °C 7200 60 Hz 7500 50 Hz 260 60 Hz 230 Typical TJ UNITS 500 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 600 V 100 μs -40 to 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST280CH..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 06 600 700 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 75 Revision: 16-Dec-13 Document Number: 94401 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280CH Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled No voltage reapplied 7200 100 % VRRM reapplied 6000 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 1130 t = 10 ms I2t A 80 (110) t = 10 ms t = 8.3 ms No voltage reapplied 7500 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 260 235 180 t = 0.1 to 10 ms, no voltage reapplied 2600 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.84 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.50 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.47 Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 VTM IH Maximum (typical) latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 165 VT(TO)1 Maximum holding current A 6300 Low level value of threshold voltage Maximum on-state voltage UNITS 500 (185) DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNIT S μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 75 mA Revision: 16-Dec-13 Document Number: 94401 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280CH Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = 25 °C IGT TJ = - 40 °C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 150 °C 180 - 90 150 30 - 2.9 - TJ = 25 °C 1.8 3.0 TJ = 150 °C 1.0 - TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 °C DC gate current required to trigger MAX. mA V 10 mA 0.30 V VALUES UNITS - 40 to 150 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs TEST CONDITIONS DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.016 0.017 0.011 0.011 120° 0.019 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 CONDUCTION ANGLE TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 16-Dec-13 Document Number: 94401 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280CH Series www.vishay.com Vishay Semiconductors 150 Maximum Allowable Heatsink Temperature (°C) 130 Maximum Allowable Heatsink Temperature (°C) ST280CH..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 140 120 110 Ø 100 Conduction angle 90 30° 80 60° 90° 70 120° 60 180° 50 40 0 100 200 300 400 150 140 130 120 110 100 90 80 70 60 50 40 30 20 ST280CH..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W Ø Conduction period 30° 90° 120° 180° DC 0 500 Average On-State Current (A) Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Ø Conduction period 30° 60° 90° 120° 0 100 200 300 400 DC 500 600 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 800 1000 1200 RMS limit Ø Conduction angle ST280CH..C Series TJ = 150 °C 0 700 100 200 300 400 500 600 700 800 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 1800 ST280CH..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W DC 180° 120° 90° 60° 30° 1600 Ø Conduction angle 30° 60° 90° 120° 180° Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 600 180° 120° 90° 60° 30° Average On-State Current (A) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 400 Fig. 4 - Current Ratings Characteristics ST280CH..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 180° 200 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics 150 140 130 120 110 100 90 80 70 60 50 40 30 20 60° 1400 1200 1000 RMS limit 800 600 Ø 400 Conduction period 200 ST280CH..C Series TJ = 150 °C 0 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics 800 0 200 400 600 800 1000 1200 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 16-Dec-13 Document Number: 94401 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280CH Series www.vishay.com 6500 7500 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 5500 7000 Peak Half Sine Wave On-State Current (A) 6000 Peak Half Sine Wave On-State Current (A) Vishay Semiconductors 5000 4500 4000 3500 6000 5500 5000 4500 4000 3500 3000 ST280CH..C Series 3000 1 6500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 10 ST280CH..C Series 2500 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-State Current (A) 1 Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10 000 TJ = 150 °C TJ = 25 °C 1000 ST280CH..C Series 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics ZthJ-hs - Transient Thermal Impedance (K/W) 1 Steady state value RthJ-hs = 0.17 K/W 0.1 (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST280CH..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 16-Dec-13 Document Number: 94401 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280CH Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (a) (b) VGD IGD TJ = 40 °C 1 0.1 0.001 TJ = 25 °C TJ = 150 °C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) (3) (4) Frequency limited by PG(AV) Device: ST280CH..C Series 0.01 (2) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 28 0 CH 06 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - CH = Ceramic PUK, high temperature 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (A-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 16-Dec-13 Document Number: 94401 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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