VS-ST280CH Series Datasheet

VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
• Extended temperature range
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
TO-200AB (A-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
TO-200AB (A-PUK)
Diode variation
Single SCR
IT(AV)
500 A
VDRM/VRRM
400 V, 600 V
VTM
1.35 V
IGT
90 mA
TJ
-40 °C to 150 °C








MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
80
°C
1130
A
25
°C
7200
60 Hz
7500
50 Hz
260
60 Hz
230
Typical
TJ
UNITS
500
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 600
V
100
μs
-40 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST280CH..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
06
600
700
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
75
Revision: 16-Dec-13
Document Number: 94401
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
No voltage
reapplied
7200
100 % VRRM 
reapplied
6000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
°C
1130
t = 10 ms
I2t
A
80 (110)
t = 10 ms
t = 8.3 ms
No voltage
reapplied
7500
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM 
reapplied
260
235
180
t = 0.1 to 10 ms, no voltage reapplied
2600
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.84
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
0.88
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.50
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
0.47
Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.35
VTM
IH
Maximum (typical) latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
165
VT(TO)1
Maximum holding current
A
6300
Low level value of threshold voltage
Maximum on-state voltage
UNITS
500 (185)
DC at 25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000 (300)
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, 
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNIT
S
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of 
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and 
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
75
mA
Revision: 16-Dec-13
Document Number: 94401
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp  5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp  5 ms
3.0
TJ = 25 °C
IGT
TJ = - 40 °C
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
A
V
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 150 °C
180
-
90
150
30
-
2.9
-
TJ = 25 °C
1.8
3.0
TJ = 150 °C
1.0
-
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum 
value which will not trigger any
unit with rated VDRM anode to
cathode applied
UNITS
W
20
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
mA
V
10
mA
0.30
V
VALUES
UNITS
- 40 to 150
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to heatsink
RthJ-hs
Maximum thermal resistance,
case to heatsink
RthC-hs
TEST CONDITIONS
DC operation single side cooled
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
K/W
4900
(500)
N
(kg)
50
g
TO-200AB (A-PUK)
RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.016
0.017
0.011
0.011
120°
0.019
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 16-Dec-13
Document Number: 94401
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
150
Maximum Allowable
Heatsink Temperature (°C)
130
Maximum Allowable
Heatsink Temperature (°C)
ST280CH..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
140
120
110
Ø
100
Conduction angle
90
30°
80
60°
90°
70
120°
60
180°
50
40
0
100
200
300
400
150
140
130
120
110
100
90
80
70
60
50
40
30
20
ST280CH..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction period
30°
90°
120°
180°
DC
0
500
Average On-State Current (A)
Maximum Average
On-State Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
Ø
Conduction period
30°
60°
90°
120°
0
100
200
300
400
DC
500
600
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
800
1000
1200
RMS limit
Ø
Conduction angle
ST280CH..C Series
TJ = 150 °C
0
700
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
1800
ST280CH..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
DC
180°
120°
90°
60°
30°
1600
Ø
Conduction angle
30°
60°
90°
120°
180°
Maximum Average
On-State Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
600
180°
120°
90°
60°
30°
Average On-State Current (A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
400
Fig. 4 - Current Ratings Characteristics
ST280CH..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
180°
200
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
60°
1400
1200
1000
RMS limit
800
600
Ø
400
Conduction period
200
ST280CH..C Series
TJ = 150 °C
0
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
800
0
200
400
600
800
1000
1200
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 16-Dec-13
Document Number: 94401
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
6500
7500
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
5500
7000
Peak Half Sine Wave
On-State Current (A)
6000
Peak Half Sine Wave
On-State Current (A)
Vishay Semiconductors
5000
4500
4000
3500
6000
5500
5000
4500
4000
3500
3000
ST280CH..C Series
3000
1
6500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
10
ST280CH..C Series
2500
0.01
100
0.1
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-State Current (A)
1
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
TJ = 150 °C
TJ = 25 °C
1000
ST280CH..C Series
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
ZthJ-hs - Transient
Thermal Impedance (K/W)
1
Steady state value
RthJ-hs = 0.17 K/W
0.1
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST280CH..C Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 16-Dec-13
Document Number: 94401
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280CH Series
www.vishay.com
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
tp = 4 ms
tp = 2 ms
tp = 1 ms
tp = 0.66 ms
(a)
(b)
VGD
IGD
TJ = 40 °C
1
0.1
0.001
TJ = 25 °C
TJ = 150 °C
Instantaneous Gate Voltage (V)
100
Vishay Semiconductors
(1)
(3) (4)
Frequency limited by PG(AV)
Device: ST280CH..C Series
0.01
(2)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
28
0
CH
06
C
1
-
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
0 = Converter grade
5
-
CH = Ceramic PUK, high temperature
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case TO-200AB (A-PUK)
8
-
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9
-
Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
Revision: 16-Dec-13
Document Number: 94401
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-200AB (A-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074
Revision: 01-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000