DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 4 page 1 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − − 18 V − − 150 mA − 1 W 70 − VCEO collector-emitter voltage IC DC collector current Ptot total power dissipation up to Ts = 135 °C (note 1) − hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 °C 25 fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 4 − GHz GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 15 − dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 11 − dB IC = 100 mA; VCE = 10 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C − 750 − mV Vo output voltage open base MIN. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − 25 V collector-emitter voltage open base − 18 V emitter-base voltage open collector − 2 V − 150 mA − 1 W −65 +150 °C 175 °C VCBO collector-base voltage VCEO VEBO IC DC collector current Ptot total power dissipation Tstg storage temperature Tj junction temperature − up to Ts = 135 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. 1999 Aug 24 2 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to soldering point up to Ts = 135 °C (note 1) 40 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V − − 1 hFE DC current gain IC = 100 mA; VCE = 10 V 25 70 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2 − Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 10 − pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − 1.2 − pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 4 − GHz GUM maximum unilateral power gain (note 1) IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 15 − dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 11 − dB note 2 − 750 − mV note 3 − 800 − mV note 4 − −55 − dB note 5 − −57 − dB Vo output voltage d2 second order intermodulation distortion Notes µA pF s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C Vp = Vo at dim = −60 dB; fp = 445.25 MHz; Vq = Vo −6 dB; fq = 453.25 MHz; Vr = Vo −6 dB; fr = 455.25 MHz; measured at f(p+q−r) = 443.25 MHz. 4. IC = 60 mA; VCE = 10 V; RL = 75 Ω; Vp = Vq = Vo = 50 dBmV; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 60 mA; VCE = 10 V; RL = 75 Ω; Vp = Vq = VO = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. 1999 Aug 24 3 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 ,, , VCC handbook, full pagewidth C4 L6 C5 L5 VBB C3 R1 input 75 Ω C1 C6 L3 output 75 Ω R2 L1 L2 L4 DUT C7 C2 R3 R4 MBB284 Fig.2 Intermodulation and second harmonic test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627 C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108 C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103 L1 microstrip line 75 Ω length 7mm; width 2.5 mm L2 microstrip line 75 Ω length 22mm; width 2.5 mm L3 (note 1) 1.5 turns 0.4 mm copper wire L4 microstripline 75 Ω L5 Ferroxcube choke 5 µH L6 (note 1) 0.4 mm copper wire ≈25 nH R1 metal film resistor 10 kΩ 2322 180 73103 R2 (note 1) metal film resistor 200 Ω 2322 180 73201 R3, R4 metal film resistor 27 Ω 2322 180 73279 int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 length 30 mm Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 1⁄32 inch. 1999 Aug 24 4 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 handbook, full pagewidth VBB VCC C3 C5 R1 75 Ω input L5 R3 C1 L3 L1 L2 C2 C6 75 Ω output L4 C7 R2 R4 L6 C4 MBB299 handbook, full pagewidth 80 mm 60 mm MBB298 handbook, full pagewidth MBB297 Fig.3 Intermodulation test circuit printed circuit board. 1999 Aug 24 5 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 MBB336 MBB361 1.2 120 handbook, halfpage handbook, halfpage P tot (W) h FE 1.0 0.8 80 0.6 0.4 40 0.2 0 0 0 50 100 150 200 ( o C) Ts 0 40 80 120 160 I C (mA) VCE = 10 V; Tj = 25 °C. Fig.5 DC current gain as a function of collector current. Fig.4 Power derating curve. MBB381 MBB357 8 3 handbook, halfpage handbook, halfpage fT (GHz) C re (pF) 6 2 4 1 2 0 0 0 4 8 12 0 16 20 VCE (V) 40 80 160 I C (mA) IE = 0; f = 1 MHz; Tj = 25 °C. VCE = 10 V; f = 500 MHz; Tj = 25 °C Fig.6 Fig.7 Feedback capacitance as a function of collector-emitter voltage. 1999 Aug 24 120 6 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 MBB386 MBB385 40 45 handbook, halfpage handbook, halfpage d im (dB) G UM (dB) 50 30 55 20 60 10 65 0 102 10 103 f (MHz) 70 20 104 40 60 80 100 120 I C (mA) IC = 100 mA; VCE = 10 V; Tamb = 25 °C. VCE = 10 V; Vo = 800 mV; f(p+q−r) = 443.25 MHz; Tamb = 25 °C. Fig.8 Fig.9 Maximum unilateral power gain as a function of frequency. Intermodulation distortion as a function of collector current. MBB383 MBB382 45 45 handbook, halfpage handbook, halfpage d im (dB) d2 (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 70 20 100 120 I C (mA) 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 750 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C. VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 °C. Fig.10 Intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. 1999 Aug 24 7 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 MBB384 45 handbook, halfpage d2 (dB) 50 55 60 65 70 20 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 °C. Fig.12 Second order intermodulation distortion as a function of collector current. 1999 Aug 24 8 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 50 handbook, full pagewidth 25 100 0 10 250 +j 10 0 25 50 100 250 –j 250 10 3 GHz 100 25 MBB380 50 IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω. Fig.13 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 180 o 50 30 o 40 30 20 10 0o 30 o 150 o 60 o 120 o 90 o MBB286 IC = 100 mA; VCE = 10 V; Tamb = 25 °C. Fig.14 Common emitter forward transmission coefficient (S21). 1999 Aug 24 9 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 0.1 0.2 180 o 0.3 0.4 0.5 0.6 0o 30 o 150 o 60 o 120 o 90 o MBB285 IC = 100 mA; VCE = 10 V; Tamb = 25 °C. Fig.15 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 0 +j 0 10 25 50 100 250 –j 250 10 3 GHz 100 25 50 MBB379 IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω. Fig.16 Common emitter output reflection coefficient (S22). 1999 Aug 24 10 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 10 o max 2 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.17 SOT223. 1999 Aug 24 7.3 6.7 o 1 1.80 max 0.2 M A 11 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 24 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 NOTES 1999 Aug 24 13 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 NOTES 1999 Aug 24 14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 NOTES 1999 Aug 24 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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