PHILIPS BFG135

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG135
NPN 7GHz wideband transistor
Product specification
File under discrete semiconductors, SC14
1995 Sep 13
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
DESCRIPTION
BFG135
PINNING
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
4
age
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
1
2
Top view
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
25
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
DC collector current
−
−
150
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
−
−
1
W
hFE
DC current gain
IC = 100 mA; VCE = 10 V; Tj = 25 °C
80
130
−
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
7
−
GHz
GUM
maximum unilateral power
gain
IC = 100 mA; VCE = 10 V; f = 500 MHz;
Tamb = 25 °C
−
16
−
dB
IC = 100 mA; VCE = 10 V; f = 800 MHz;
Tamb = 25 °C
−
12
−
dB
850
−
mV
Vo
output voltage
dim = −60 dB; IC = 100 mA; VCE = 10 V; −
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
150
mA
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
V
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
THERMAL
RESISTANCE
CONDITIONS
thermal resistance from junction to soldering
point
up to Ts = 145 °C (note 1)
30 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
TYP.
−
MAX.
UNIT
µA
ICBO
collector cut-off current
IE = 0; VCB = 10 V
hFE
DC current gain
IC = 100 mA; VCE = 10 V
80
130
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
7
−
pF
1
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
1.2
−
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
7
−
GHz
GUM
maximum unilateral power
gain
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
16
−
dB
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
−
12
−
dB
note 1
−
900
−
mV
note 2
−
850
−
mV
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 °C;
f(p+q) = 450 MHz;
fp = 50 MHz; fq = 400 MHz
−
−58
−
dB
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 °C;
f(p+q) = 810 MHz;
fp = 250 MHz; fq = 560 MHz
−
−53
−
dB
Vo
d2
output voltage
second order intermodulation
distortion
Notes
1. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
1995 Sep 13
3
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
,,
,
VCC
handbook, full pagewidth
C4
L6
C5
L5
VBB
C3
input
75 Ω
C1
C6
L3
R1
output
75 Ω
R2
L1
L2
L4
DUT
C7
C2
R3
R4
MBB284
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
UNIT
DIMENSIONS
CATALOGUE NO.
C1, C3, C5, C6
multilayer ceramic capacitor
10
nF
2222 590 08627
C2, C7
multilayer ceramic capacitor
1
pF
2222 851 12108
C4 (note 1)
miniature ceramic plate capacitor
10
nF
L1
microstripline
75
Ω
length 7 mm;
width 2.5 mm
2222 629 08103
L2
microstripline
75
Ω
length 22mm;
width 2.5 mm
L3 (note 1)
1.5 turns 0.4 mm copper wire
L4
microstripline
75
Ω
L5
Ferroxcube choke
5
µH
L6 (note 1)
0.4 mm copper wire
≈25
nH
R1
metal film resistor
10
kΩ
2322 180 73103
R2 (note 1)
metal film resistor
200
Ω
2322 180 73201
R3, R4
metal film resistor
27
Ω
2322 180 73279
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm;
width 2.5 mm
3122 108 20153
length 30 mm
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness
1⁄
1
16 inch; thickness of copper sheet ⁄32 inch.
1995 Sep 13
4
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
handbook, full pagewidth
VBB
VCC
C3
C5
R1
75 Ω
input
L5
R3
C1
L3
L1
L2
C2
C6
75 Ω
output
L4
C7
R2
R4
L6
C4
MBB299
andbook, full pagewidth
80 mm
60 mm
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation distortion test printed-circuit board.
1995 Sep 13
5
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MBB300
MBB294
1.2
160
handbook,
halfpage
P
handbook, halfpage
tot
(W)
h FE
1.0
0.8
120
0.6
0.4
80
0.2
40
0
0
50
100
150
Ts
200
( o C)
0
40
80
120
160
I C (mA)
VCE = 10 V; Tj = 25 °C.
Fig.5
DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB295
MBB296
8
3
handbook, halfpage
handbook, halfpage
fT
(GHz)
C re
(pF)
6
2
4
1
2
0
0
0
4
8
12
0
16
20
VCB (V)
120
160
VCE = 10 V; f = 1 GHz; Tamb = 25 °C.
Feedback capacitance as a function of
collector-base voltage.
1995 Sep 13
80
I C (mA)
IE = 0; f = 1 MHz; Tj = 25 °C.
Fig.6
40
Fig.7
6
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MBB292
MBB293
45
45
handbook, halfpage
handbook, halfpage
d im
(dB)
d im
(dB)
50
50
55
55
60
60
65
65
70
20
40
60
80
70
20
100
120
I C (mA)
VCE = 10 V; Vo = 900 mV; Tamb = 25 °C;
f(p+q−r) = 443.25 MHz.
Fig.8
40
60
80
VCE = 10 V; Vo = 850 mV; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz.
Intermodulation distortion as a function of
collector current.
Fig.9
Intermodulation distortion as a function of
collector current.
MBB291
MBB290
45
45
handbook, halfpage
handbook, halfpage
d2
(dB)
d2
(dB)
50
50
55
55
60
60
65
65
70
20
100
120
I C (mA)
40
60
80
70
20
100
120
I C (mA)
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C;
f(p+q) = 450 MHz.
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 810 MHz.
Fig.10 Second order intermodulation distortion as
a function of collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 13
7
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA951
60
MEA952
50
handbook,
Z halfpage
handbook, halfpage
L
(Ω)
ZL
(Ω)
50
40
40
RL
RL
30
30
20
20
10
10
0
–10
XL
0
0.25
0.50
XL
0
0.75
1.0
POUT (W)
0
0.5
1
POUT (W) 1.5
VCE = 7.5 V; f = 900 MHz.
VCE = 10 V; f = 900 MHz.
Fig.12 Load impedance as a function of output
power.
Fig.13 Load impedance as a function of output
power.
MEA953
60
MEA948
10
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
50
8
ri
RL
40
xi
6
30
4
20
XL
10
2
0
0
0
0.5
1
P
(W) 1.5
OUT
0
0.25
0.50
0.75
1.0
P
(W)
OUT
VCE = 12.5 V; f = 900 MHz.
VCE = 7.5 V; f = 900 MHz.
Fig.14 Load impedance as a function of output
power.
Fig.15 Input impedance as a function of output
power.
1995 Sep 13
8
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA949
MEA950
10
10
handbook, halfpage
handbook, halfpage
Zi
(Ω)
Zi
(Ω)
8
8
ri
ri
6
6
xi
xi
4
4
2
2
0
0
0
0.5
0
1.5
1
0.5
1
POUT (W)
1.5
POUT (W)
VCE = 10 V; f = 900 MHz.
VCE = 12.5 V; f = 900 MHz.
Fig.16 Input impedance as a function of output
power.
Fig.17 Input impedance as a function of output
power.
MEA947
MEA945
1.5
80
handbook, halfpage
handbook, halfpage
η
(%)
V CE =
12.5 V
P OUT
(W)
V CE =
12.5 V
70
7.5 V
10 V
1
10 V
7.5 V
60
0.5
50
40
0
0
0.5
1
POUT (W) 1.5
0
100
200
300
P IN (mW)
f = 900 MHz.
f = 900 MHz.
Fig.18 Efficiency as a function of output power.
Fig.19 Output power as a function of input power.
1995 Sep 13
9
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA946
MBB289
40
10
handbook, halfpage
handbook, halfpage
Gp
(dB)
G UM
V
(dB)
=
CE
12.5 V
8
30
6
10 V
20
7.5 V
4
10
2
0
0
0
0.5
1
POUT (W) 1.5
10
102
103
f (MHz)
104
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
f = 900 MHz.
Fig.21 Maximum unilateral power gain as a
function of frequency.
Fig.20 Power gain as a function of output power.
1995 Sep 13
10
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
50
handbook, full pagewidth
25
100
10
250
+j
10
0
25
50
100
∞
250
–j
250
10
100
25
MBB288
50
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω..
Fig.22 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
60 o
120 o
150 o
180 o
50
30 o
40
30
20
10
0o
30 o
150 o
60 o
120 o
90 o
MBB286
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.23 Common emitter forward transmission coefficient (S21).
1995 Sep 13
11
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
90 o
handbook, full pagewidth
60 o
120 o
150 o
30 o
0.1 0.2
180 o
0.3 0.4
0.5
0.6
0o
30 o
150 o
60 o
120 o
90 o
MBB285
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.24 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
+j
0
10
25
50
100
250
∞
–j
250
10
100
25
50
MBB287
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω..
Fig.25 Common emitter output reflection coefficient (S22).
1995 Sep 13
12