DISCRETE SEMICONDUCTORS DATA SHEET BFM520 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 1996 Oct 08 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 FEATURES PINNING - SOT363A Small size PIN SYMBOL Temperature and hFE matched 1 b1 base 1 Low noise and high gain 2 e1 emitter 1 High gain at low current and low capacitance at low voltage 3 c2 collector 2 4 b2 base 2 5 e2 emitter 2 6 c1 collector 1 Gold metallization ensures excellent reliability. DESCRIPTION APPLICATIONS Oscillator and buffer amplifiers 6 Balanced amplifiers 5 4 c1 handbook, halfpage LNA/mixers. b1 c2 b2 DESCRIPTION e1 Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 2 e2 3 Top view MAM210 Marking code: N2. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor 0.4 pF IC = 20 mA; VCE = 3 V; f = 900 MHz 9 GHz insertion power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C 13 14.5 dB GUM maximum unilateral power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C 15 dB F noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt 1.2 1.6 dB Rth j-s thermal resistance from junction to soldering point single loaded 230 K/W double loaded 115 K/W Cre feedback capacitance Ie = 0; VCB = 3 V; f = 1 MHz fT transition frequency s 21 2 1996 Oct 08 2 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base 8 V VEBO emitter-base voltage open collector 2.5 V IC DC collector current 70 mA Ptot total power dissipation 1 W Tstg storage temperature 65 +175 C Tj junction temperature 175 C up to Ts = 118 C; note 1 20 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS UNIT single loaded 230 K/W double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 VALUE 3 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor IC = 2.5 A; IE = 0 20 V(BR)CBO collector-base breakdown voltage V V(BR)CEO collector-emitter breakdown voltage IC = 10 A; IB = 0 8 V V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0 2.5 V ICBO collector-base leakage current VCB = 6 V; IE = 0 50 nA hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 DC characteristics of the dual transistor hFE ratio of highest and lowest DC current gain IC1 = IC2 = 20 mA; VCE1 = VCE2 = 6 V 1 1.2 VBEO difference between highest and lowest base-emitter voltage (offset voltage) IE1 = IE2 = 30 mA; Tamb = 25 C 0 1 mV AC characteristics of any single transistor fT transition frequency IC = 20 mA; VCE = 3 V; f = 1 GHz 9 GHz Cc collector capacitance IE = ie = 0; VCB = 3 V; f = 1 MHz 0.5 pF Cre feedback capacitance IC = 0; VCB = 3 V; f = 1 MHz 0.4 pF GUM maximum unilateral power gain; note 1 IC = 20 mA; VCE = 3 V; Tamb = 25 C; f = 900 MHz 15 dB IC = 20 mA; VCE = 3 V; Tamb = 25 C; f = 2 GHz 9 dB insertion power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C 13 14.5 dB noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt 1.2 1.6 dB IC = 20 mA; VCE = 3 V; f = 900 MHz; S = opt 1.7 2.1 dB IC = 5 mA; VCE = 3 V; f = 2 GHz; S = opt 1.9 dB s 21 2 F Note 1. GUM is the maximum unilateral power gain, assuming s12 is zero. 1996 Oct 08 4 s 21 2 G UM = 10 log -------------------------------------------------------dB 1 – s 11 2 1 – s 22 2 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 MRA705 MBG228 1.5 12 handbook, halfpage handbook, halfpage Ptot (mW) fT (GHz) VCE = 6V double loaded 1 8 VCE = 3V single loaded 0.5 4 0 0 50 100 150 Ts (oC) 0 10−1 200 1 10 102 IC (mA) f = 1 GHz; Tamb = 25 C. Fig.2 Power derating as a function of soldering point temperature; typical values. Fig.3 MRA703 Transition frequency as a function of collector current; typical values. MRA704 0.6 250 handbook, halfpage handbook, halfpage hFE Cre (pF) 200 0.4 150 100 0.2 50 0 10−2 10−1 1 0 10 I (mA) 102 C 0 4 VCE = 6 V. IC = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 1996 Oct 08 5 8 VCB (V) 12 Feedback capacitance as a function of collector-base voltage; typical values. NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 MGG203 20 MGG204 20 handbook, halfpage handbook, halfpage gain (dB) gain (dB) MSG/Gmax 16 16 GUM 12 12 MSG/Gmax 8 8 4 4 0 0 10 20 IC (mA) GUM 0 30 0 10 f = 900 MHz; VCE = 3 V. f = 2 GHz; VCE = 3 V. Fig.6 Fig.7 Gain as a function of collector current; typical values. 20 IC (mA) 30 Gain as a function of collector current; typical values. MGG205 MGG206 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM GUM 30 MSG/Gmax 30 MSG/Gmax 20 20 10 10 0 10 102 103 f (MHz) 0 10 104 IC = 5 mA; VCE = 3 V. IC = 20 mA; VCE = 3 V. Fig.8 Fig.9 Gain as a function of frequency; typical values. 1996 Oct 08 6 102 103 f (MHz) 104 Gain as a function of frequency; typical values. NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 MRA714 5 handbook, halfpage Fmin (dB) 4 f = 900 MHz MRA715 20 Gass handbook, halfpage (dB) 15 (dB) 4 5 Fmin IC = 5 mA 20 mA 20 Gass (dB) 15 Gass 1000 MHz Gass 3 10 3 10 5 2 5 0 1 2000 MHz 2 2000 MHz 1000 MHz 1 Fmin 20 mA 900 MHz Fmin 0 5 mA 500 MHz 0 1 10 IC (mA) −5 102 0 102 103 f (MHz) −5 104 VCE = 3 V. VCE = 3 V. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Fig.11 Minimum noise figure and associated available gain as functions of frequency. 1996 Oct 08 7 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 APPLICATION INFORMATION SPICE parameters for any single BFM520 die C1 handbook, halfpage SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER VALUE IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 0.775 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780 fA V mA fA V mA aA A eV pF mV ps V mA deg fF mV ps F mV LP B1 LP T1 LB T2 LE B2 LB LE E1 MBG188 E2 Fig.12 Package equivalent circuit SOT363A (inductance only). Lead inductances (nH) LP 0.4 LB 0.6 LE 1.0 E2 3 E1 27 6 B2 1 27 3 C2 3 17 36 48 C1 48 36 17 3 6 B1 E2 E1 B2 C2 MBG189 Fig.13 Package capacitance (fF) between indicated nodes. Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 C2 UNIT 8 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1996 Oct 08 REFERENCES IEC JEDEC JEITA SC-88 9 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1996 Oct 08 10 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1996 Oct 08 11 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp12 Date of release: 1996 Oct 08