DISCRETE SEMICONDUCTORS DATA SHEET BFM520 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 FEATURES PINNING - SOT363A • Small size PIN SYMBOL DESCRIPTION • Temperature and hFE matched 1 b1 base 1 • Low noise and high gain 2 e1 emitter 1 • High gain at low current and low capacitance at low voltage 3 c2 collector 2 4 b2 base 2 5 e2 emitter 2 6 c1 collector 1 • Gold metallization ensures excellent reliability. APPLICATIONS • Oscillator and buffer amplifiers 6 • Balanced amplifiers 5 4 c1 handbook, halfpage • LNA/mixers. b1 c2 b2 DESCRIPTION e1 Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 2 e2 3 Top view MAM210 Marking code: N2. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor 0.4 − pF IC = 20 mA; VCE = 3 V; f = 900 MHz − 9 − GHz insertion power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C 13 14.5 − dB GUM maximum unilateral power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C − 15 − dB F noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt − 1.2 1.6 dB Rth j-s thermal resistance from junction to soldering point single loaded − − 230 K/W double loaded − − 115 K/W Cre feedback capacitance Ie = 0; VCB = 3 V; f = 1 MHz fT transition frequency s 21 2 1996 Oct 08 2 − Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation − 1 W Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C up to Ts = 118 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS VALUE UNIT single loaded 230 K/W double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 3 Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor IC = 2.5 µA; IE = 0 20 − − V 8 − − V 2.5 − − V − 50 nA 120 250 V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 ICBO collector-base leakage current VCB = 6 V; IE = 0 − hFE DC current gain IC = 20 mA; VCE = 6 V 60 DC characteristics of the dual transistor ∆hFE ratio of highest and lowest DC current gain IC1 = IC2 = 20 mA; VCE1 = VCE2 = 6 V 1 1.2 − ∆VBEO difference between highest and lowest base-emitter voltage (offset voltage) IE1 = IE2 = 30 mA; Tamb = 25 °C 0 1 − mV AC characteristics of any single transistor fT transition frequency IC = 20 mA; VCE = 3 V; f = 1 GHz − 9 − GHz Cc collector capacitance IE = ie = 0; VCB = 3 V; f = 1 MHz − 0.5 − pF Cre feedback capacitance IC = 0; VCB = 3 V; f = 1 MHz − 0.4 − pF GUM maximum unilateral power gain; note 1 IC = 20 mA; VCE = 3 V; Tamb = 25 °C; f = 900 MHz − 15 − dB IC = 20 mA; VCE = 3 V; Tamb = 25 °C; f = 2 GHz − 9 − dB insertion power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C 13 14.5 − dB noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt − 1.2 1.6 dB IC = 20 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt − 1.7 2.1 dB IC = 5 mA; VCE = 3 V; f = 2 GHz; ΓS = Γopt − 1.9 − dB s 21 2 F Note s 21 2 dB 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 1996 Oct 08 4 Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 MRA705 MBG228 1.5 12 handbook, halfpage handbook, halfpage Ptot (mW) fT (GHz) VCE = 6V double loaded 1 8 VCE = 3V single loaded 0.5 4 0 0 50 100 150 Ts (oC) 0 10−1 200 1 10 102 IC (mA) f = 1 GHz; Tamb = 25 °C. Fig.2 Power derating as a function of soldering point temperature; typical values. Fig.3 MRA703 Transition frequency as a function of collector current; typical values. MRA704 0.6 250 handbook, halfpage handbook, halfpage hFE Cre (pF) 200 0.4 150 100 0.2 50 0 10−2 10−1 1 0 10 I (mA) 102 C 0 4 VCE = 6 V. IC = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 1996 Oct 08 5 8 VCB (V) 12 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 MGG203 20 MGG204 20 handbook, halfpage handbook, halfpage gain (dB) gain (dB) MSG/Gmax 16 16 GUM 12 12 MSG/Gmax 8 8 4 4 0 0 10 20 IC (mA) GUM 0 30 0 10 f = 900 MHz; VCE = 3 V. f = 2 GHz; VCE = 3 V. Fig.6 Fig.7 Gain as a function of collector current; typical values. 20 IC (mA) 30 Gain as a function of collector current; typical values. MGG205 MGG206 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM GUM 30 MSG/Gmax 30 MSG/Gmax 20 20 10 10 0 10 102 103 f (MHz) 0 10 104 IC = 5 mA; VCE = 3 V. IC = 20 mA; VCE = 3 V. Fig.8 Fig.9 Gain as a function of frequency; typical values. 1996 Oct 08 6 102 103 f (MHz) 104 Gain as a function of frequency; typical values. Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 MRA714 4 MLB585 20 handbook, halfpage handbook, halfpage F (dB) G ass (dB) 3 15 f = 900 MHz 1000 MHz f = 2000 MHz 10 2 100100 1000 MHz 900 MHz 500 MHz 2000 MHz 5 1 0 0 1 10 IC (mA) 10 1 2 10 I C (mA) 10 2 VCE = 3 V. VCE = 3 V. Fig.10 Minimum noise figure as a function of collector current, typical values. Fig.11 Associated available gain as a function of collector current, typical values. MRA715 4 MLB586 20 handbook, halfpage handbook, halfpage F (dB) I C = 5 mA G ass (dB) 3 15 2 10 20 mA IC = 20 mA 1 5 5 mA 0 102 3 10 f (MHz) 10 0 10 2 4 10 3 f (MHz) 10 4 VCE = 3 V. VCE = 3 V. Fig.12 Minimum noise figure as a function of frequency, typical values. Fig.13 Associated available gain as a function of frequency, typical values. 1996 Oct 08 7 Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 APPLICATION INFORMATION SPICE parameters for any single BFM520 die C1 handbook, halfpage SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER VALUE IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 0.775 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780 fA − − V mA fA − − − V mA aA − Ω µA Ω Ω Ω − eV − pF mV − ps − V mA deg fF mV − − ps F mV − − LP B1 LP T1 LB T2 LE B2 LB LE E1 MBG188 E2 Fig.14 Package equivalent circuit SOT363A (inductance only). Lead inductances (nH) LP 0.4 LB 0.6 LE 1.0 E2 3 E1 27 6 B2 1 27 3 C2 3 17 36 48 C1 48 36 17 3 6 B1 E2 E1 B2 C2 MBG189 Fig.15 Package capacitance (fF) between indicated nodes. Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 C2 UNIT 8 Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 PACKAGE OUTLINE 0.2 handbook, full pagewidth 1.1 0.8 0.9 0.6 0.25 0.10 0.1 0.0 0.3 0.1 0.65 0.65 MSA368 0.2 M B 1.35 1.15 A 1 B 6 2 5 3 4 2.2 2.0 Dimensions in mm. Fig.16 SOT363. 1996 Oct 08 9 0.3 0.2 (6x) 2.2 1.8 0.2 M A Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 08 10