PHILIPS BFM520

DISCRETE SEMICONDUCTORS
DATA SHEET
BFM520
Dual NPN wideband transistor
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
FEATURES
PINNING - SOT363A
• Small size
PIN
SYMBOL
DESCRIPTION
• Temperature and hFE matched
1
b1
base 1
• Low noise and high gain
2
e1
emitter 1
• High gain at low current and low capacitance at low
voltage
3
c2
collector 2
4
b2
base 2
5
e2
emitter 2
6
c1
collector 1
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Oscillator and buffer amplifiers
6
• Balanced amplifiers
5
4
c1
handbook, halfpage
• LNA/mixers.
b1
c2
b2
DESCRIPTION
e1
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
1
2
e2
3
Top view
MAM210
Marking code: N2.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
0.4
−
pF
IC = 20 mA; VCE = 3 V; f = 900 MHz −
9
−
GHz
insertion power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
13
14.5
−
dB
GUM
maximum unilateral power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
−
15
−
dB
F
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.2
1.6
dB
Rth j-s
thermal resistance from junction
to soldering point
single loaded
−
−
230
K/W
double loaded
−
−
115
K/W
Cre
feedback capacitance
Ie = 0; VCB = 3 V; f = 1 MHz
fT
transition frequency
s 21
2
1996 Oct 08
2
−
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C
up to Ts = 118 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
VALUE
UNIT
single loaded
230
K/W
double loaded
115
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
IC = 2.5 µA; IE = 0
20
−
−
V
8
−
−
V
2.5
−
−
V
−
50
nA
120
250
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage IC = 10 µA; IB = 0
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
ICBO
collector-base leakage current
VCB = 6 V; IE = 0
−
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
DC characteristics of the dual transistor
∆hFE
ratio of highest and lowest DC
current gain
IC1 = IC2 = 20 mA;
VCE1 = VCE2 = 6 V
1
1.2
−
∆VBEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 = IE2 = 30 mA; Tamb = 25 °C
0
1
−
mV
AC characteristics of any single transistor
fT
transition frequency
IC = 20 mA; VCE = 3 V; f = 1 GHz
−
9
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 3 V; f = 1 MHz
−
0.5
−
pF
Cre
feedback capacitance
IC = 0; VCB = 3 V; f = 1 MHz
−
0.4
−
pF
GUM
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 3 V;
Tamb = 25 °C; f = 900 MHz
−
15
−
dB
IC = 20 mA; VCE = 3 V;
Tamb = 25 °C; f = 2 GHz
−
9
−
dB
insertion power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
13
14.5
−
dB
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.2
1.6
dB
IC = 20 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.7
2.1
dB
IC = 5 mA; VCE = 3 V;
f = 2 GHz; ΓS = Γopt
−
1.9
−
dB
s 21
2
F
Note
s 21 2
dB
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MRA705
MBG228
1.5
12
handbook, halfpage
handbook, halfpage
Ptot
(mW)
fT
(GHz)
VCE = 6V
double loaded
1
8
VCE = 3V
single loaded
0.5
4
0
0
50
100
150
Ts (oC)
0
10−1
200
1
10
102
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.2 Power derating as a function of soldering
point temperature; typical values.
Fig.3
MRA703
Transition frequency as a function of
collector current; typical values.
MRA704
0.6
250
handbook, halfpage
handbook, halfpage
hFE
Cre
(pF)
200
0.4
150
100
0.2
50
0
10−2
10−1
1
0
10 I (mA) 102
C
0
4
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
1996 Oct 08
5
8
VCB (V)
12
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MGG203
20
MGG204
20
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG/Gmax
16
16
GUM
12
12
MSG/Gmax
8
8
4
4
0
0
10
20
IC (mA)
GUM
0
30
0
10
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
20
IC (mA)
30
Gain as a function of collector current;
typical values.
MGG205
MGG206
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
GUM
30
MSG/Gmax
30
MSG/Gmax
20
20
10
10
0
10
102
103
f (MHz)
0
10
104
IC = 5 mA; VCE = 3 V.
IC = 20 mA; VCE = 3 V.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
1996 Oct 08
6
102
103
f (MHz)
104
Gain as a function of frequency; typical
values.
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MRA714
4
MLB585
20
handbook, halfpage
handbook, halfpage
F
(dB)
G ass
(dB)
3
15
f = 900 MHz
1000 MHz
f = 2000 MHz
10
2
100100
1000
MHz
900 MHz
500 MHz
2000 MHz
5
1
0
0
1
10
IC (mA)
10
1
2
10
I C (mA)
10 2
VCE = 3 V.
VCE = 3 V.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
Fig.11 Associated available gain as a function of
collector current, typical values.
MRA715
4
MLB586
20
handbook, halfpage
handbook, halfpage
F
(dB)
I C = 5 mA
G ass
(dB)
3
15
2
10
20 mA
IC =
20 mA
1
5
5 mA
0
102
3
10
f (MHz)
10
0
10 2
4
10 3
f (MHz)
10 4
VCE = 3 V.
VCE = 3 V.
Fig.12 Minimum noise figure as a function of
frequency, typical values.
Fig.13 Associated available gain as a function of
frequency, typical values.
1996 Oct 08
7
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
APPLICATION INFORMATION
SPICE parameters for any single BFM520 die
C1
handbook, halfpage
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
PARAMETER
VALUE
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
0.775
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
fA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
pF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ps
F
mV
−
−
LP
B1
LP
T1
LB
T2
LE
B2
LB
LE
E1
MBG188
E2
Fig.14 Package equivalent circuit SOT363A
(inductance only).
Lead inductances (nH)
LP
0.4
LB
0.6
LE
1.0
E2
3
E1
27
6
B2
1
27
3
C2
3
17
36
48
C1
48
36
17
3
6
B1
E2
E1
B2
C2
MBG189
Fig.15 Package capacitance (fF) between
indicated nodes.
Note
1. These parameters have not been extracted,
the default values are shown.
1996 Oct 08
C2
UNIT
8
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
PACKAGE OUTLINE
0.2
handbook, full pagewidth
1.1
0.8
0.9
0.6
0.25
0.10
0.1
0.0
0.3
0.1
0.65
0.65
MSA368
0.2 M B
1.35
1.15
A
1
B
6
2
5
3
4
2.2
2.0
Dimensions in mm.
Fig.16 SOT363.
1996 Oct 08
9
0.3
0.2
(6x)
2.2
1.8
0.2 M A
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 08
10