Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFM505
Dual NPN wideband transistor
Product specification
Supersedes data of 1995 Sep 04
1996 Oct 08
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
FEATURES
PINNING - SOT363A
 Small size
PIN
SYMBOL
 Temperature and hFE matched
1
b1
base 1
 Low noise and high gain
2
e1
emitter 1
 High gain at low current and low capacitance at low
voltage
3
c2
collector 2
4
b2
base 2
5
e2
emitter 2
6
c1
collector 1
 Gold metallization ensures excellent reliability.
DESCRIPTION
APPLICATIONS
 Oscillator and buffer amplifiers
6
 Balanced amplifiers
5
4
c1
handbook, halfpage
 LNA/mixer.
b1
c2
b2
DESCRIPTION
e1
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
1
2
e2
3
Top view
MAM210
Marking code: N0.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
Cre
feedback capacitance
Ie = 0; VCB = 3 V; f = 1 MHz

0.22

pF
fT
transition frequency
IC = 5 mA; VCE = 3V; f = 1 GHz

9

GHz
insertion power gain
IC = 5 mA; VCE = 3 V; f = 900 MHz;
Tamb = 25 C
14
15

dB
GUM
maximum unilateral power gain
IC = 5 mA; VCE = 3 V; f = 900 MHz;
Tamb = 25 C

17

dB
F
noise figure
IC = 1 mA; VCE = 3 V; f = 900 MHz;
S = opt

1.1
1.6
dB
Rth j-s
thermal resistance from junction
to soldering point
single loaded


230
K/W
double loaded


115
K/W
s 21
2
1996 Oct 08
2
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
LIMITING VALUES
In accordance with the Absolute Maximum System IEC 134.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor

VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base

8
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
DC collector current

18
mA
Ptot
total power dissipation

500
mW
Tstg
storage temperature
65
+175
C
Tj
junction temperature

175
C
up to Ts = 118 C; note 1
20
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
UNIT
single loaded
230
K/W
double loaded
115
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
VALUE
3
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
IC = 2.5 A; IE = 0
20


V(BR)CBO
collector-base breakdown voltage
V
V(BR)CEO
collector-emitter breakdown voltage IC = 10 A; IB = 0
8


V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
2.5


V
ICBO
collector-base leakage current
VCB = 6 V; IE = 0


50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
DC characteristics of the dual transistor
hFE
ratio of highest and lowest DC
current gain
IC1 = IC2 = 5 mA;
VCE1 = VCE2 = 6 V
1
1.2

VBEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 = IE2 = 10 mA; Tamb = 25 C
0
1

mV
AC characteristics of any single transistor
fT
transition frequency
IC = 5 mA; VCE = 3 V; f = 1 GHz

9

GHz
Cc
collector capacitance
IE = ie = 0; VCB = 3 V; f = 1 MHz

0.31

pF
Cre
feedback capacitance
IC = 0; VCB = 3 V; f = 1 MHz

0.22

pF
GUM
maximum unilateral power gain;
note 1
IC = 5 mA; VCE = 3 V;
Tamb = 25 C; f = 900 MHz

17

dB
IC = 5 mA; VCE = 3 V;
Tamb = 25 C; f = 2 GHz

10

dB
insertion power gain
IC = 5 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 C
14
15

dB
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; S = opt

1.4
1.8
dB
IC = 5 mA; VCE = 3 V;
f = 2 GHz; S = opt

1.9

dB
IC = 1 mA; VCE = 3 V;
f = 900 MHz; S = opt

1.1
1.6
dB
s 21
2
F
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
1996 Oct 08
4
s 21 2
G UM = 10 log -------------------------------------------------------dB
 1 – s 11 2   1 – s 22 2 
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
MBG208
600
handbook, halfpage
fT
(GHz)
double loaded
Ptot
(mW)
MGD687
12
handbook, halfpage
400
VCE = 6V
8
3V
single loaded
200
4
0
0
50
100
150
Ts (oC)
0
10−1
200
1
10
IC (mA)
f = 1 GHz; Tamb = 25 C.
Fig.2
Power derating as a function of soldering
point temperature; typical values.
Fig.3
Transition frequency as a function of
collector current; typical values.
MRA719
250
MRA720
0.4
handbook, halfpage
handbook, halfpage
hFE
Cre
(pF)
200
0.3
150
0.2
100
0.1
50
0
10−3
0
10−2
10−1
1
10
0
102
IC (mA)
2
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
1996 Oct 08
5
4
6
8
10
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
MGG199
20
MGG200
20
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
16
16
12
MSG/Gmax
12
MSG
GUM
8
8
4
4
0
0
0
4
8
IC (mA)
12
0
4
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MGG201
IC (mA)
12
Gain as a function of collector current;
typical values.
MGG202
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
GUM
MSG/Gmax
30
8
30
MSG/Gmax
20
20
10
10
0
10
102
103
f (MHz)
0
10
104
IC = 1 mA; VCE = 3 V.
IC = 5 mA; VCE = 3 V.
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
1996 Oct 08
6
102
103
f (MHz)
Gain as a function of frequency;
typical values.
104
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
MGC766
5
MGD686
20
handbook, halfpage
handbook, halfpage
F
(dB)
Gass
(dB)
f = 900 MHz
4
15
3
10
1GHz
2 GHz
5
2
2000 MHz
1000 MHz
900 MHz
500 MHz
1
0
−5
0
10−1
1
10−1
10
IC (mA)
VCE = 3 V.
1
IC (mA)
10
VCE = 3 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Associated available gain as a function of
collector current; typical values.
MGC768
5
MGC769
20
handbook, halfpage
handbook, halfpage
4
15
3
10
F
(dB)
Gass
(dB)
IC = 1.25 mA
5 mA
5
2
5 mA
0
1
1.25 mA
−5
0
102
103
f (MHz)
104
102
103
f (MHz)
104
VCE = 3 V.
VCE = 3 V.
Fig.12 Minimum noise figure as a function of
frequency; typical values.
Fig.13 Associated available gain as a function of
frequency; typical values.
1996 Oct 08
7
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
PARAMETER
VALUE
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
134.1
180.0
0.988
38.34
150.0
27.81
2.051
55.19
0.982
2.459
2.920
17.45
1.062
20.00
1.000
20.00
1.171
4.350
0.000
1.110
3.000
284.7
600.0
0.303
7.037
12.34
1.701
30.64
0.000
242.4
188.6
0.041
0.130
1.332
0.000
750.0
0.000
0.897
UNIT
aA


V
mA
fA



V
mA
aA


A




eV

fF
mV

ps

V
mA
deg
fF
mV


ns
F
mV


C2
LP
B1
LP
T1
LB
T2
LE
B2
LB
LE
E1
MBG188
E2
Fig.14 Package equivalent circuit SOT363A
(inductance only).
Lead inductances (nH)
LP
0.4
LB
0.6
LE
1.0
E2
3
E1
27
6
B2
1
27
3
C2
3
17
36
48
C1
48
36
17
3
6
B1
E2
E1
B2
C2
MBG189
Fig.15 Package capacitance (fF) between
indicated nodes.
Note
1. These parameters have not been extracted,
the default values are shown.
1996 Oct 08
C1
handbook, halfpage
8
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1996 Oct 08
REFERENCES
IEC
JEDEC
JEITA
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
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provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
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However, NXP Semiconductors does not give any
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shall have no liability for the consequences of use of such
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In no event shall NXP Semiconductors be liable for any
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
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associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1996 Oct 08
10
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
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described herein may be subject to export control
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NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
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Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
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qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
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product for such automotive applications, use and
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1996 Oct 08
11
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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Printed in The Netherlands
R77/02/pp12
Date of release: 1996 Oct 08