DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 1996 Oct 08 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 FEATURES PINNING - SOT363A Small size PIN SYMBOL Temperature and hFE matched 1 b1 base 1 Low noise and high gain 2 e1 emitter 1 High gain at low current and low capacitance at low voltage 3 c2 collector 2 4 b2 base 2 5 e2 emitter 2 6 c1 collector 1 Gold metallization ensures excellent reliability. DESCRIPTION APPLICATIONS Oscillator and buffer amplifiers 6 Balanced amplifiers 5 4 c1 handbook, halfpage LNA/mixer. b1 c2 b2 DESCRIPTION e1 Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 2 e2 3 Top view MAM210 Marking code: N0. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor Cre feedback capacitance Ie = 0; VCB = 3 V; f = 1 MHz 0.22 pF fT transition frequency IC = 5 mA; VCE = 3V; f = 1 GHz 9 GHz insertion power gain IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C 14 15 dB GUM maximum unilateral power gain IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C 17 dB F noise figure IC = 1 mA; VCE = 3 V; f = 900 MHz; S = opt 1.1 1.6 dB Rth j-s thermal resistance from junction to soldering point single loaded 230 K/W double loaded 115 K/W s 21 2 1996 Oct 08 2 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 LIMITING VALUES In accordance with the Absolute Maximum System IEC 134. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base 8 V VEBO emitter-base voltage open collector 2.5 V IC DC collector current 18 mA Ptot total power dissipation 500 mW Tstg storage temperature 65 +175 C Tj junction temperature 175 C up to Ts = 118 C; note 1 20 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS UNIT single loaded 230 K/W double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 VALUE 3 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor IC = 2.5 A; IE = 0 20 V(BR)CBO collector-base breakdown voltage V V(BR)CEO collector-emitter breakdown voltage IC = 10 A; IB = 0 8 V V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0 2.5 V ICBO collector-base leakage current VCB = 6 V; IE = 0 50 nA hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 DC characteristics of the dual transistor hFE ratio of highest and lowest DC current gain IC1 = IC2 = 5 mA; VCE1 = VCE2 = 6 V 1 1.2 VBEO difference between highest and lowest base-emitter voltage (offset voltage) IE1 = IE2 = 10 mA; Tamb = 25 C 0 1 mV AC characteristics of any single transistor fT transition frequency IC = 5 mA; VCE = 3 V; f = 1 GHz 9 GHz Cc collector capacitance IE = ie = 0; VCB = 3 V; f = 1 MHz 0.31 pF Cre feedback capacitance IC = 0; VCB = 3 V; f = 1 MHz 0.22 pF GUM maximum unilateral power gain; note 1 IC = 5 mA; VCE = 3 V; Tamb = 25 C; f = 900 MHz 17 dB IC = 5 mA; VCE = 3 V; Tamb = 25 C; f = 2 GHz 10 dB insertion power gain IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C 14 15 dB noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt 1.4 1.8 dB IC = 5 mA; VCE = 3 V; f = 2 GHz; S = opt 1.9 dB IC = 1 mA; VCE = 3 V; f = 900 MHz; S = opt 1.1 1.6 dB s 21 2 F Note 1. GUM is the maximum unilateral power gain, assuming s12 is zero. 1996 Oct 08 4 s 21 2 G UM = 10 log -------------------------------------------------------dB 1 – s 11 2 1 – s 22 2 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 MBG208 600 handbook, halfpage fT (GHz) double loaded Ptot (mW) MGD687 12 handbook, halfpage 400 VCE = 6V 8 3V single loaded 200 4 0 0 50 100 150 Ts (oC) 0 10−1 200 1 10 IC (mA) f = 1 GHz; Tamb = 25 C. Fig.2 Power derating as a function of soldering point temperature; typical values. Fig.3 Transition frequency as a function of collector current; typical values. MRA719 250 MRA720 0.4 handbook, halfpage handbook, halfpage hFE Cre (pF) 200 0.3 150 0.2 100 0.1 50 0 10−3 0 10−2 10−1 1 10 0 102 IC (mA) 2 VCE = 6 V. IC = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 1996 Oct 08 5 4 6 8 10 VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 MGG199 20 MGG200 20 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM 16 16 12 MSG/Gmax 12 MSG GUM 8 8 4 4 0 0 0 4 8 IC (mA) 12 0 4 f = 900 MHz; VCE = 3 V. f = 2 GHz; VCE = 3 V. Fig.6 Fig.7 Gain as a function of collector current; typical values. MGG201 IC (mA) 12 Gain as a function of collector current; typical values. MGG202 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM GUM MSG/Gmax 30 8 30 MSG/Gmax 20 20 10 10 0 10 102 103 f (MHz) 0 10 104 IC = 1 mA; VCE = 3 V. IC = 5 mA; VCE = 3 V. Fig.8 Fig.9 Gain as a function of frequency; typical values. 1996 Oct 08 6 102 103 f (MHz) Gain as a function of frequency; typical values. 104 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 MGC766 5 MGD686 20 handbook, halfpage handbook, halfpage F (dB) Gass (dB) f = 900 MHz 4 15 3 10 1GHz 2 GHz 5 2 2000 MHz 1000 MHz 900 MHz 500 MHz 1 0 −5 0 10−1 1 10−1 10 IC (mA) VCE = 3 V. 1 IC (mA) 10 VCE = 3 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Associated available gain as a function of collector current; typical values. MGC768 5 MGC769 20 handbook, halfpage handbook, halfpage 4 15 3 10 F (dB) Gass (dB) IC = 1.25 mA 5 mA 5 2 5 mA 0 1 1.25 mA −5 0 102 103 f (MHz) 104 102 103 f (MHz) 104 VCE = 3 V. VCE = 3 V. Fig.12 Minimum noise figure as a function of frequency; typical values. Fig.13 Associated available gain as a function of frequency; typical values. 1996 Oct 08 7 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 APPLICATION INFORMATION SPICE parameters for any single BFM505 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER VALUE IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT aA V mA fA V mA aA A eV fF mV ps V mA deg fF mV ns F mV C2 LP B1 LP T1 LB T2 LE B2 LB LE E1 MBG188 E2 Fig.14 Package equivalent circuit SOT363A (inductance only). Lead inductances (nH) LP 0.4 LB 0.6 LE 1.0 E2 3 E1 27 6 B2 1 27 3 C2 3 17 36 48 C1 48 36 17 3 6 B1 E2 E1 B2 C2 MBG189 Fig.15 Package capacitance (fF) between indicated nodes. Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 C1 handbook, halfpage 8 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1996 Oct 08 REFERENCES IEC JEDEC JEITA SC-88 9 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1996 Oct 08 11 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp12 Date of release: 1996 Oct 08