PHILIPS BFM505

DISCRETE SEMICONDUCTORS
DATA SHEET
BFM505
Dual NPN wideband transistor
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
FEATURES
PINNING - SOT363A
• Small size
PIN
SYMBOL
DESCRIPTION
• Temperature and hFE matched
1
b1
base 1
• Low noise and high gain
2
e1
emitter 1
• High gain at low current and low capacitance at low
voltage
3
c2
collector 2
4
b2
base 2
5
e2
emitter 2
6
c1
collector 1
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Oscillator and buffer amplifiers
6
• Balanced amplifiers
5
4
c1
handbook, halfpage
• LNA/mixer.
b1
c2
b2
DESCRIPTION
e1
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
1
2
e2
3
Top view
MAM210
Marking code: N0.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
Cre
feedback capacitance
Ie = 0; VCB = 3 V; f = 1 MHz
−
0.22
−
pF
fT
transition frequency
IC = 5 mA; VCE = 3V; f = 1 GHz
−
9
−
GHz
insertion power gain
IC = 5 mA; VCE = 3 V; f = 900 MHz;
Tamb = 25 °C
14
15
−
dB
GUM
maximum unilateral power gain
IC = 5 mA; VCE = 3 V; f = 900 MHz;
Tamb = 25 °C
−
17
−
dB
F
noise figure
IC = 1 mA; VCE = 3 V; f = 900 MHz;
ΓS = Γopt
−
1.1
1.6
dB
Rth j-s
thermal resistance from junction
to soldering point
single loaded
−
−
230
K/W
double loaded
−
−
115
K/W
s 21
2
1996 Oct 08
2
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
LIMITING VALUES
In accordance with the Absolute Maximum System IEC 134.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
18
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C
up to Ts = 118 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
VALUE
UNIT
single loaded
230
K/W
double loaded
115
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
IC = 2.5 µA; IE = 0
20
−
−
V
8
−
−
V
IE = 2.5 µA; IC = 0
2.5
−
−
V
collector-base leakage current
VCB = 6 V; IE = 0
−
−
50
nA
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage IC = 10 µA; IB = 0
V(BR)EBO
emitter-base breakdown voltage
ICBO
hFE
DC characteristics of the dual transistor
∆hFE
ratio of highest and lowest DC
current gain
IC1 = IC2 = 5 mA;
VCE1 = VCE2 = 6 V
1
1.2
−
∆VBEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 = IE2 = 10 mA; Tamb = 25 °C
0
1
−
mV
AC characteristics of any single transistor
fT
transition frequency
IC = 5 mA; VCE = 3 V; f = 1 GHz
−
9
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 3 V; f = 1 MHz
−
0.31
−
pF
Cre
feedback capacitance
IC = 0; VCB = 3 V; f = 1 MHz
−
0.22
−
pF
GUM
maximum unilateral power gain;
note 1
IC = 5 mA; VCE = 3 V;
Tamb = 25 °C; f = 900 MHz
−
17
−
dB
IC = 5 mA; VCE = 3 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
insertion power gain
IC = 5 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
14
15
−
dB
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.4
1.8
dB
IC = 5 mA; VCE = 3 V;
f = 2 GHz; ΓS = Γopt
−
1.9
−
dB
IC = 1 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.1
1.6
dB
s 21
2
F
Note
s 21 2
dB
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
MBG208
600
handbook, halfpage
fT
(GHz)
double loaded
Ptot
(mW)
MGD687
12
handbook, halfpage
400
VCE = 6V
8
3V
single loaded
200
4
0
0
50
100
150
Ts (oC)
0
10−1
200
1
10
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.2
Power derating as a function of soldering
point temperature; typical values.
Fig.3
Transition frequency as a function of
collector current; typical values.
MRA719
250
MRA720
0.4
handbook, halfpage
handbook, halfpage
hFE
Cre
(pF)
200
0.3
150
0.2
100
0.1
50
0
10−3
0
10−2
10−1
1
10
0
102
IC (mA)
2
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
1996 Oct 08
5
4
6
8
10
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
MGG199
20
MGG200
20
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
16
16
12
MSG/Gmax
12
MSG
GUM
8
8
4
4
0
0
0
4
8
IC (mA)
12
0
4
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MGG201
IC (mA)
12
Gain as a function of collector current;
typical values.
MGG202
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
GUM
MSG/Gmax
30
8
30
MSG/Gmax
20
20
10
10
0
10
102
103
f (MHz)
0
10
104
IC = 1 mA; VCE = 3 V.
IC = 5 mA; VCE = 3 V.
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
1996 Oct 08
6
102
103
f (MHz)
Gain as a function of frequency;
typical values.
104
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
MGC766
5
MGD686
20
handbook, halfpage
handbook, halfpage
F
(dB)
Gass
(dB)
f = 900 MHz
4
15
3
10
1GHz
2 GHz
5
2
2000 MHz
1000 MHz
900 MHz
500 MHz
1
0
−5
0
10−1
1
10−1
10
IC (mA)
VCE = 3 V.
1
IC (mA)
10
VCE = 3 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Associated available gain as a function of
collector current; typical values.
MGC768
5
MGC769
20
handbook, halfpage
handbook, halfpage
4
15
3
10
F
(dB)
Gass
(dB)
IC = 1.25 mA
5 mA
5
2
5 mA
0
1
1.25 mA
−5
0
102
103
f (MHz)
104
102
103
f (MHz)
104
VCE = 3 V.
VCE = 3 V.
Fig.12 Minimum noise figure as a function of
frequency; typical values.
Fig.13 Associated available gain as a function of
frequency; typical values.
1996 Oct 08
7
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
PARAMETER
VALUE
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
134.1
180.0
0.988
38.34
150.0
27.81
2.051
55.19
0.982
2.459
2.920
17.45
1.062
20.00
1.000
20.00
1.171
4.350
0.000
1.110
3.000
284.7
600.0
0.303
7.037
12.34
1.701
30.64
0.000
242.4
188.6
0.041
0.130
1.332
0.000
750.0
0.000
0.897
aA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
fF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ns
F
mV
−
−
C2
LP
B1
LP
T1
LB
T2
LE
B2
LB
LE
E1
MBG188
E2
Fig.14 Package equivalent circuit SOT363A
(inductance only).
Lead inductances (nH)
LP
0.4
LB
0.6
LE
1.0
E2
3
E1
27
6
B2
1
27
3
C2
3
17
36
48
C1
48
36
17
3
6
B1
E2
E1
B2
C2
MBG189
Fig.15 Package capacitance (fF) between
indicated nodes.
Note
1. These parameters have not been extracted,
the default values are shown.
1996 Oct 08
C1
handbook, halfpage
UNIT
8
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
PACKAGE OUTLINE
0.2
handbook, full pagewidth
1.1
0.8
0.9
0.6
0.25
0.10
0.1
0.0
0.3
0.1
0.65
0.65
MSA368
0.2 M B
1.35
1.15
A
1
B
6
2
5
3
4
2.2
2.0
Dimensions in mm.
Fig.16 SOT363.
1996 Oct 08
9
0.3
0.2
(6x)
2.2
1.8
0.2 M A
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 08
10