DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 FEATURES PINNING - SOT353 • Small size • High power gain at low bias current and high frequencies • High reverse isolation • Low noise figure • Gold metallization ensures excellent reliability • Minimum operating voltage VC2−E1 = 1 V. APPLICATIONS SYMBOL PIN DESCRIPTION b2 1 base 2 e1 2 emitter 1 b1 3 base 1 c1/e2 4 collector 1/emitter 2 c2 5 collector 2 c2 handbook, halfpage 5 • Low noise, high gain amplifiers 4 • Oscillator buffer amplifiers b2 • Wideband voltage-to-current converters. c1/e2 b1 DESCRIPTION 1 Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and cordless phones and has a very low feedback capacitance resulting in high isolation. 2 3 e1 Top view MAM212 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA VC2−E1 = 3 V; IC = 20 mA; VB2 = 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL Cre s 21 ⁄ s 12 PARAMETER CONDITIONS maximum isolation TYP. MAX. UNIT − − 10 fF f = 900 MHz; Tamb = 25 °C − −63 − dB f = 2 GHz; Tamb = 25 °C − −38 − dB feedback capacitance CB1−C2 2 MIN. maximum stable power gain (narrowband) f = 900 MHz; Tamb = 25 °C − 31 − dB f = 2 GHz; Tamb = 25 °C − 19 − dB F noise figure IC = 5 mA; f = 900 MHz; ΓS = Γopt − 1.3 1.6 dB Rth j-s thermal resistance from junction to soldering point single loaded − − 230 K/W double loaded − − 115 K/W MSG 1997 Sep 10 2 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation − 1 W Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C up to Ts = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS VALUE UNIT single loaded 230 K/W double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1997 Sep 10 3 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor IC = 2.5 µA; IE = 0 20 − − V 8 − − V V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 2.5 − − V ICBO collector-base leakage current IE = 0; VCB = 6 V − − 50 nA hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 AC characteristics of the cascode configuration fT transition frequency IC = 20 mA; VC2-E1 = 3 V; f = 1 GHz − 7 − GHz Cc collector capacitance T2 IE = ie = 0; VC2-B2 = 1 V; f = 1 MHz − 0.55 − pF Cre2 feedback capacitance T2 IC = 0; VC2-E1 = 3 V; f = 1 MHz − 500 − fF Cre feedback capacitance IC = 0; VC2-E1 = 3 V; f = 1 MHz − − 10 fF MSG maximum stable power gain; note 1 IC = 20 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 °C − 31 − dB IC = 20 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 °C − 19 − dB IC = 20 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 °C − 17 − dB IC = 20 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 °C − 13 − dB f = 900 MHz f = 2 GHz IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz; ΓS = Γopt − − 63 38 − − dB dB − 1.3 1.6 dB − −18 − dBm s 21 insertion power gain 2 s 21 ⁄ s 12 2 maximum isolation; note 2 F noise figure IP3 third order intercept point (input) Notes 2 1. MSG = s 12 ⁄ s 21 × k – k – 1 note 3 2 2 2 1 + s 11 × s 22 – s 12 × s 21 – s 11 – s 22 k = ---------------------------------------------------------------------------------------------------------------2 × s 12 × s 21 2. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application). 3. IC =5 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 904 MHz. 1997 Sep 10 4 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 MBG228 1.5 MBG219 12 handbook, halfpage handbook, halfpage VC2-E1 = 12 V fT (GHz) Ptot (mW) 9V double loaded 1 8 6V single loaded 0.5 3V 4 0 0 50 100 150 Ts (oC) 0 200 1 10 102 IC (mA) f = 1 GHz; Tamb = 25 °C. Fig.2 Power derating as a function of soldering point temperature; typical values. Fig.3 MGG219 4 Transition frequency as a function of collector current; typical values. MGG220 3 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 900 MHz 3 2 IC = 2 mA 500 MHz 2 10 mA 1 1 0 10−1 0 1 f (GHz) 1 10 VC2-E1 = 3 V. VC2-E1 = 3 V. Fig.4 Fig.5 Minimum noise figure as a function of frequency; typical values. 1997 Sep 10 5 10 IC (mA) 102 Minimum noise figure as a function of collector current; typical values. Philips Semiconductors Product specification NPN wideband cascode transistor MGG221 60 handbook, halfpage MSG (dB) BFC520 handbook, halfpage IC = 5 mA S21/S12 2 mA (dB) MGG222 50 120 100 S21/S12 MSG (dB) (dB) f = 500 MHz 40 80 80 40 900 MHz 1 mA 30 60 40 20 2 GHz 20 0 10−2 10−1 1 f (GHz) 10 10−1 0 10 1 VC2-E1 = 3 V. VC2-E1 = 3 V. Fig.6 Fig.7 Maximum stable gain as a function of frequency; typical values. MGG223 30 10 40 IC (mA) 20 102 Maximum stable gain and isolation as functions of collector current; typical values. MGG224 10 handbook, halfpage handbook, halfpage S21 IP3 (dBm) RL = 220 Ω (dB) output 0 20 50 Ω −10 10 −20 0 10−1 1 10 IC (mA) input −30 10−1 102 1 10 IC (mA) VC2-E1 = 3 V; RS = 50 Ω; XS = XL = opt; f = 900 MHz. Point tuned for maximum gain with double slug tuners. VC2-E1 = 3 V; f = 900 MHz. Fig.8 Fig.9 Insertion gain as a function of collector current; typical values. 1997 Sep 10 6 102 Third order intercept point as a function of collector current; typical values. Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 APPLICATION INFORMATION SPICE parameters for any single BFC520 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER VALUE IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780 UNIT fA − − V mA fA − − − V mA aA − Ω µA Ω mΩ Ω − eV − pF mV − ps − V mA deg fF mV − − ps F mV − − handbook, halfpage B2 LP T2 LB2 LE2 C1/E2 LP B1 LP T1 LB1 LP LE1 E1 MBG216 Fig.10 Package equivalent circuit SOT353A (inductance only). Lead and mutual inductances (nH) LP 0.4 M(LB1,LE1) +0.4 LB1,2 0.5 M(LB1,LE2) +0.25 LE1,2 0.8 E1 35 B2 3.5 35 C2 2 35 36 36 35 2 15 B1 E1 B2 C2 C1/E2 MBG217 Note Fig.11 Package capacitance (fF) between indicated nodes. 1. These parameters have not been extracted, the default values are shown. 1997 Sep 10 C2 LP 7 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 Typical application circuits +VCC andbook, full pagewidth R1 RF output RF input MBG226 R1 increases stability (10 to 47 Ω). Fig.12 Narrowband amplifier. +VCC handbook, full pagewidth RF output E1 T2 T1 Vtune E1 MBG227 T1 forms a colpitts oscillator. T2 acts as a buffer amplifier. Fig.13 VCO/buffer combination. 1997 Sep 10 8 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 1997 Sep 10 REFERENCES IEC JEDEC EIAJ SC-88A 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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