2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage Tamb = 25 °C - - ±20 V ID drain current Tamb = 25 °C; VGS = 10 V - - 300 mA RDSon drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 500 mA - 1 1.6 Ω [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source 1 2 G1 gate 1 3 D2 drain 2 4 S2 source 2 5 G2 gate 2 6 D1 drain 1 Simplified outline 6 1 Graphic symbol 4 5 2 3 1 6 2 5 3 4 017aaa055 3. Ordering information Table 3. Ordering information Type number 2N7002BKS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002BKS ZT* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 60 V - ±20 V Tamb = 25 °C - 300 mA Tamb = 100 °C - 215 mA Per transistor VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage Tamb = 25 °C ID 2N7002BKS Product data sheet drain current VGS = 10 V All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 [1] © NXP B.V. 2010. All rights reserved. 2 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs - 1.2 A Ptot total power dissipation Tamb = 25 °C [2] - 295 mW [1] - 340 mW - 1040 mW Tsp = 25 °C Source-drain diode Tamb = 25 °C [1] - 300 mA electrostatic discharge voltage human body model [3] - 2000 V Ptot total power dissipation Tamb = 25 °C [2] - 445 mW Tj junction temperature 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C source current IS ESD maximum rating VESD Per device [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa001 120 Pder (%) Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. 017aaa002 120 Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature 2N7002BKS −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa056 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 370 425 K/W [2] - 320 370 K/W - - 120 K/W - - 275 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) 2N7002BKS Product data sheet thermal resistance from junction to ambient in free air [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa057 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.25 102 10 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa058 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 10 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.6 2.1 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 10 μA - 1.3 2 Ω - 1 1.6 Ω - 550 - mS - 0.5 0.6 nC - 0.2 - nC - 0.1 - nC - 33 50 pF - 7 - pF - 4 - pF - 5 10 ns - 6 - ns - 12 24 ns - 7 - ns 0.47 0.75 1.1 V Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD [1] 2N7002BKS Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa039 0.7 VGS = 4.0 V ID (A) 0.6 017aaa040 10−3 3.5 V ID (A) 3.25 V 0.5 10−4 (1) 0.4 (3) (2) 3.0 V 0.3 10−5 2.75 V 0.2 2.5 V 0.1 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 1.0 2.0 VDS (V) 3.0 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa041 6.0 RDSon (Ω) Sub-threshold drain current as a function of gate-source voltage 017aaa042 6.0 RDSon (Ω) (1) 4.0 4.0 (2) (3) 2.0 (1) 2.0 (4) (2) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 °C 4.0 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 °C (2) VGS = 3.5 V (2) Tamb = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values 2N7002BKS Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa043 1.0 ID (A) 017aaa044 2.4 a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa045 3.0 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa046 102 (1) C (pF) (1) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 −60 0 60 120 180 Tamb (°C) ID = 0.25 mA; VDS = VGS 1 10−1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values 2N7002BKS 1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa047 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDD = 6 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa048 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 18. Package outline SOT363 (SC-88) 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint SOT363 (SC-88) 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002BKS v.2 20100923 Product data sheet - 2N7002BKS v.1 - - Modifications: 2N7002BKS v.1 2N7002BKS Product data sheet • Table 2 “Pinning”: graphic symbol amended 20100617 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 September 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 September 2010 Document identifier: 2N7002BKS